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Researcher profile

Jianhua Zhao

Jianhua Zhao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciMachine Learningphysics.app-phquant-ph

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Published work

12 published item(s)

preprint2024arXiv

Robust bilinear factor analysis based on the matrix-variate $t$ distribution

Factor Analysis based on multivariate $t$ distribution ($t$fa) is a useful robust tool for extracting common factors on heavy-tailed or contaminated data. However, $t$fa is only applicable to vector data. When $t$fa is applied to matrix data, it is common to first vectorize the matrix observations. This introduces two challenges for $t$fa: (i) the inherent matrix structure of the data is broken, and (ii) robustness may be lost, as vectorized matrix data typically results in a high data dimension, which could easily lead to the breakdown of $t$fa. To address these issues, starting from the intrinsic matrix structure of matrix data, a novel robust factor analysis model, namely bilinear factor analysis built on the matrix-variate $t$ distribution ($t$bfa), is proposed in this paper. The novelty is that it is capable to simultaneously extract common factors for both row and column variables of interest on heavy-tailed or contaminated matrix data. Two efficient algorithms for maximum likelihood estimation of $t$bfa are developed. Closed-form expression for the Fisher information matrix to calculate the accuracy of parameter estimates are derived. Empirical studies are conducted to understand the proposed $t$bfa model and compare with related competitors. The results demonstrate the superiority and practicality of $t$bfa. Importantly, $t$bfa exhibits a significantly higher breakdown point than $t$fa, making it more suitable for matrix data.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Quantifying quantum coherence of multiple-charge states in tunable Josephson junctions

Coherence and tunneling play central roles in quantum phenomena. In a tunneling event, the time that a particle spends inside the barrier has been fiercely debated. This problem becomes more complex when tunneling repeatedly occurs back and forth, and when involving many particles. Here we report the measurement of the coherence time of various charge states tunneling in a nanowire-based tunable Josephson junction; including single charges, multiple charges, and Cooper pairs. We studied all the charge tunneling processes using Landau-Zener-Stückelberg-Majorana (LZSM) interferometry, and observed high-quality interference patterns. In particular, the coherence time of the charge states was extracted from the interference fringes in Fourier space. In addition, our measurements show the break-up of Cooper pairs, from a macroscopic quantum coherent state to individual particle states. Besides the fundamental research interest, our results also establish LZSM interferometry as a powerful technique to explore the coherence time of charges in hybrid devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Choosing the number of factors in factor analysis with incomplete data via a hierarchical Bayesian information criterion

The Bayesian information criterion (BIC), defined as the observed data log likelihood minus a penalty term based on the sample size $N$, is a popular model selection criterion for factor analysis with complete data. This definition has also been suggested for incomplete data. However, the penalty term based on the `complete&#39; sample size $N$ is the same no matter whether in a complete or incomplete data case. For incomplete data, there are often only $N_i<N$ observations for variable $i$, which means that using the `complete&#39; sample size $N$ implausibly ignores the amounts of missing information inherent in incomplete data. Given this observation, a novel criterion called hierarchical BIC (HBIC) for factor analysis with incomplete data is proposed. The novelty is that it only uses the actual amounts of observed information, namely $N_i$&#39;s, in the penalty term. Theoretically, it is shown that HBIC is a large sample approximation of variational Bayesian (VB) lower bound, and BIC is a further approximation of HBIC, which means that HBIC shares the theoretical consistency of BIC. Experiments on synthetic and real data sets are conducted to access the finite sample performance of HBIC, BIC, and related criteria with various missing rates. The results show that HBIC and BIC perform similarly when the missing rate is small, but HBIC is more accurate when the missing rate is not small.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electrically tunable spin-orbit interaction in an InAs nanosheet

We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport characteristics of the InAs nanosheet are investigated by magnetoconductance measurements at low temperatures. It is shown that the electron transport in the nanosheet can be tuned from the weak antilocalization to the weak localization and then back to the weak antilocalization regime with a voltage applied over the dual gate without a change in carrier density. The spin-orbit length extracted from the magnetoconductance measurements at a constant carrier density exhibits a peak value at which the SOI of the Rashba type is suppressed and the spin relaxation due to the presence of an SOI of the Dresselhaus type in the nanosheet can be revealed. Energy band diagram simulations have also been carried out for the device at the experimental conditions and the physical insights into the experimental observations have been discussed in light of the results of simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices

Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices are epitaxially grown, free-standing, zincblende crystals and are in micrometer lateral sizes. The hBN and graphite flakes are obtained by exfoliation. Each trilayer is made by successively stacking an InSb nanosheet on an hBN flake and on a graphite flake using a home-made alignment stacking/transfer setup. The fabricated single- and double-gate devices are characterized by electrical and/or magnetotransport measurements. In all these devices, the graphite and hBN flakes are employed as the bottom gates and the gate dielectrics. The measurements of a fabricated single bottom-gate field-effect device show that the InSb nanosheet in the device has an electron field-effect mobility of ~7300 cm$^2$V$^{-1}$s$^{-1}$ and a low gate hysteresis of ~0.05 V at 1.9 K. The measurements of a double-gate Hall-bar device show that both the top and the bottom gate exhibit strong capacitive couplings to the InSb nanosheet channel and can thus tune the nanosheet channel conduction effectively. The electron Hall mobility in the InSb nanosheet of the Hall-bar device is extracted to be larger than 1.1$\times$10$^4$ cm$^2$V$^{-1}$s$^{-1}$ at a sheet electron density of ~6.1$\times$10$^{11}$ cm$^{-2}$ and 1.9 K and, thus, the device exhibits well-defined Shubnikov-de Haas oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding ~18000 cm$^2$V$^{-1}$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass m$^*$$\sim$0.028 m$_0$ and the quantum lifetime $τ$$\sim$0.046 ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for developments of quantum computation and quantum simulation technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to the standard semiconductor chip fabrication technology. However, development of a highly tunable semiconductor multiple QD system still remains as a major challenge. Here, we demonstrate realization of a highly tunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAs nanowire with fine finger gate technique. The QQD is studied by electron transport measurements in the linear response regime. Characteristic two-dimensional charge stability diagrams containing four groups of resonant current lines of different slopes are found for the QQD. It is shown that these current lines can be individually assigned as arising from resonant electron transport through the energy levels of different QDs. Benefited from the excellent gate tunability, we also demonstrate tuning of the QQD to regimes where the energy levels of two QDs, three QDs and all the four QDs are energetically on resonance, respectively, with the fermi level of source and drain contacts. A capacitance network model is developed for the linear QQD and the simulated charge stability diagrams based on the model show good agreements with the experiments. Our work presents a solid experimental evidence that narrow bandgap semiconductor nanowires multiple QDs could be used as a versatile platform to achieve integrated qubits for quantum computing and to perform quantum simulations for complex many-body systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the nanowire TQD are studied by measurements of the direct transport signals of the TQD and by detection of the charge state transitions in the TQD via the nanowire QD sensor. Excellent agreements in the charge stability diagrams of the TQD obtained by the direct transport measurements and by the charge-state transition detection measurements are achieved. It is shown that the charge stability diagrams are featured by three groups of charge state transition lines of different slopes, corresponding to the changes in the electron occupation numbers of the three individual QDs in the TQD. It is also shown that the integrated nanowire QD sensor is highly sensitive and can detect the charge state transitions in the cases where the direct transport signals of the TQD are too weak to be measurable. Tuning to a regime, where all the three QDs in the TQD are close to be on resonance with the Fermi level of the source and drain reservoirs and co-existence of triple and quadruple points becomes possible, has also been demonstrated with the help of the charge sensor in the region where the direct transport signals of the TQD are hardly visible.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of disorder can create potential inhomogeneity in the wire, destroy the topological gap, and form trivial sub-gap states mimicking MZM in transport experiments. Further study shows that reducing the InAs nanowire diameter from growth can significantly suppress the formation of these defects and stacking faults. Here, we demonstrate the in situ growth of ultra-thin InAs nanowires with epitaxial Al film by molecular-beam epitaxy. Our InAs diameter (~ 30 nm) is only one-third of the diameters (~ 100 nm) commonly used in literatures. The ultra-thin InAs nanowires are pure phase crystals for various different growth directions, suggesting a low level of disorder. Transmission electron microscopy confirms an atomically sharp and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and $2e^-$ periodic Coulomb blockade at zero magnetic field, a necessary step for future MZM experiments. A large zero bias conductance peak with a peak height reaching 80% of $2e^2/h$ is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Molecular Patterning and Directed Self-Assembly of Gold Nanoparticles on GaAs

The ability to create micro/nano patterns of organic self-assembled monolayers on semiconductor surfaces is crucial for fundamental studies and applications in a number of emerging fields in nanoscience. Here, we demonstrate the patterning of thiol molecular SAMs on oxide-free GaAs surface by dip-pen nanolithography and micro-contact printing, facilitated by a process of surface etching and passivation of the GaAs. A quantitative analysis on the molecular diffusion on GaAs was conducted by examining the writing of nanoscale dot and line patterns by DPN, which agrees well with surface diffusion models. The functionality of the patterned thiol molecules was demonstrated by directed self-assembly of gold nanoparticles onto a template of 4-Aminothiophenol SAM on GaAs. The highly selective assembly of the Au NPs was evidenced with atomic force microscopy and scanning electron microscopy. The ability to precisely control the assembly of Au NPs on oxide-free semiconductor surfaces using molecular templates may lead to an efficient bottom-up method for the fabrication of nano-plasmonic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices.

0 citations0 reviewsNo code linkedOpen access