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Dong Pan

Dong Pan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

15 published item(s)

preprint2023arXiv

Quantifying quantum coherence of multiple-charge states in tunable Josephson junctions

Coherence and tunneling play central roles in quantum phenomena. In a tunneling event, the time that a particle spends inside the barrier has been fiercely debated. This problem becomes more complex when tunneling repeatedly occurs back and forth, and when involving many particles. Here we report the measurement of the coherence time of various charge states tunneling in a nanowire-based tunable Josephson junction; including single charges, multiple charges, and Cooper pairs. We studied all the charge tunneling processes using Landau-Zener-Stückelberg-Majorana (LZSM) interferometry, and observed high-quality interference patterns. In particular, the coherence time of the charge states was extracted from the interference fringes in Fourier space. In addition, our measurements show the break-up of Cooper pairs, from a macroscopic quantum coherent state to individual particle states. Besides the fundamental research interest, our results also establish LZSM interferometry as a powerful technique to explore the coherence time of charges in hybrid devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

An Evolutionary Pathway for the Quantum Internet Relying on Secure Classical Repeaters

Until quantum repeaters become mature, quantum networks remain restricted either to limited areas of directly connected nodes or to nodes connected to a common node. We circumvent this limitation by conceiving quantum networks using secure classical repeaters combined with the quantum secure direct communication (QSDC) principle, which is a compelling form of quantum communication that directly transmits information over quantum channel. The final component of this promising solution is our classical quantum-resistant algorithm. Explicitly, in these networks, the ciphertext gleaned from a quantum-resistant algorithm is transmitted using QSDC along the nodes, where it is read out and then transmitted to the next node. At the repeaters, the information is protected by our quantum-resistant algorithm, which is secure even in the face of a quantum computer. Hence, our solution offers secure end-to-end communication across the entire network, since it is capable of both eavesdropping detection and prevention in the emerging quantum internet. It is compatible with operational networks, and will enjoy the compelling services of the popular Internet, including authentication. Hence, it smoothens the transition from the classical Internet to the Quantum Internet (Qinternet) by following a gradual evolutionary upgrade. It will act as an alternative network in quantum computing networks in the future. We have presented the first experimental demonstration of a secure classical repeater based hybrid quantum network constructed by a serial concatenation of an optical fiber and free-space communication link. In conclusion, secure repeater networks may indeed be constructed using existing technology and continue to support a seamless evolutionary pathway to the future Qinternet of quantum computers.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electrically tunable spin-orbit interaction in an InAs nanosheet

We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport characteristics of the InAs nanosheet are investigated by magnetoconductance measurements at low temperatures. It is shown that the electron transport in the nanosheet can be tuned from the weak antilocalization to the weak localization and then back to the weak antilocalization regime with a voltage applied over the dual gate without a change in carrier density. The spin-orbit length extracted from the magnetoconductance measurements at a constant carrier density exhibits a peak value at which the SOI of the Rashba type is suppressed and the spin relaxation due to the presence of an SOI of the Dresselhaus type in the nanosheet can be revealed. Energy band diagram simulations have also been carried out for the device at the experimental conditions and the physical insights into the experimental observations have been discussed in light of the results of simulations.

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preprint2022arXiv

Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices

Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices are epitaxially grown, free-standing, zincblende crystals and are in micrometer lateral sizes. The hBN and graphite flakes are obtained by exfoliation. Each trilayer is made by successively stacking an InSb nanosheet on an hBN flake and on a graphite flake using a home-made alignment stacking/transfer setup. The fabricated single- and double-gate devices are characterized by electrical and/or magnetotransport measurements. In all these devices, the graphite and hBN flakes are employed as the bottom gates and the gate dielectrics. The measurements of a fabricated single bottom-gate field-effect device show that the InSb nanosheet in the device has an electron field-effect mobility of ~7300 cm$^2$V$^{-1}$s$^{-1}$ and a low gate hysteresis of ~0.05 V at 1.9 K. The measurements of a double-gate Hall-bar device show that both the top and the bottom gate exhibit strong capacitive couplings to the InSb nanosheet channel and can thus tune the nanosheet channel conduction effectively. The electron Hall mobility in the InSb nanosheet of the Hall-bar device is extracted to be larger than 1.1$\times$10$^4$ cm$^2$V$^{-1}$s$^{-1}$ at a sheet electron density of ~6.1$\times$10$^{11}$ cm$^{-2}$ and 1.9 K and, thus, the device exhibits well-defined Shubnikov-de Haas oscillations.

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preprint2022arXiv

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding ~18000 cm$^2$V$^{-1}$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass m$^*$$\sim$0.028 m$_0$ and the quantum lifetime $τ$$\sim$0.046 ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for developments of quantum computation and quantum simulation technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to the standard semiconductor chip fabrication technology. However, development of a highly tunable semiconductor multiple QD system still remains as a major challenge. Here, we demonstrate realization of a highly tunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAs nanowire with fine finger gate technique. The QQD is studied by electron transport measurements in the linear response regime. Characteristic two-dimensional charge stability diagrams containing four groups of resonant current lines of different slopes are found for the QQD. It is shown that these current lines can be individually assigned as arising from resonant electron transport through the energy levels of different QDs. Benefited from the excellent gate tunability, we also demonstrate tuning of the QQD to regimes where the energy levels of two QDs, three QDs and all the four QDs are energetically on resonance, respectively, with the fermi level of source and drain contacts. A capacitance network model is developed for the linear QQD and the simulated charge stability diagrams based on the model show good agreements with the experiments. Our work presents a solid experimental evidence that narrow bandgap semiconductor nanowires multiple QDs could be used as a versatile platform to achieve integrated qubits for quantum computing and to perform quantum simulations for complex many-body systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the nanowire TQD are studied by measurements of the direct transport signals of the TQD and by detection of the charge state transitions in the TQD via the nanowire QD sensor. Excellent agreements in the charge stability diagrams of the TQD obtained by the direct transport measurements and by the charge-state transition detection measurements are achieved. It is shown that the charge stability diagrams are featured by three groups of charge state transition lines of different slopes, corresponding to the changes in the electron occupation numbers of the three individual QDs in the TQD. It is also shown that the integrated nanowire QD sensor is highly sensitive and can detect the charge state transitions in the cases where the direct transport signals of the TQD are too weak to be measurable. Tuning to a regime, where all the three QDs in the TQD are close to be on resonance with the Fermi level of the source and drain reservoirs and co-existence of triple and quadruple points becomes possible, has also been demonstrated with the help of the charge sensor in the region where the direct transport signals of the TQD are hardly visible.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Experimental free-space quantum secure direct communication and its security analysis

We report an experimental implementation of free-space quantum secure direct communication based on single photons. The quantum communication scheme uses phase encoding, and the asymmetric Mach-Zehnder interferometer is optimized so as to automatically compensate phase drift of the photons during their transitions over the free-space medium. An information transmission rate of 500 bps over a 10-meter free space with a mean quantum bit error rate of 0.49%$\pm$0.27% is achieved. The security is analyzed under the scenario that Eve performs collective attack and photon number splitting collective attack. Our results show that quantum secure direct communication is feasible in free space.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of disorder can create potential inhomogeneity in the wire, destroy the topological gap, and form trivial sub-gap states mimicking MZM in transport experiments. Further study shows that reducing the InAs nanowire diameter from growth can significantly suppress the formation of these defects and stacking faults. Here, we demonstrate the in situ growth of ultra-thin InAs nanowires with epitaxial Al film by molecular-beam epitaxy. Our InAs diameter (~ 30 nm) is only one-third of the diameters (~ 100 nm) commonly used in literatures. The ultra-thin InAs nanowires are pure phase crystals for various different growth directions, suggesting a low level of disorder. Transmission electron microscopy confirms an atomically sharp and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and $2e^-$ periodic Coulomb blockade at zero magnetic field, a necessary step for future MZM experiments. A large zero bias conductance peak with a peak height reaching 80% of $2e^2/h$ is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO$_2$ substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of $Δ_{ST}\sim 2.3$ meV, a strong spin-orbit interaction of $Δ_{SO}\sim 140$ $μ$eV, and a large and strongly level-dependent Landé g factor of $\sim 12.5$. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets

Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here we report on a new route towards growth of single-crystalline, layered InSb materials. We demonstrate the successful growth of free-standing, two-dimensional InSb nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The grown InSb nanosheets are pure zinc-blende single crystals. The length and width of the InSb nanosheets are up to several micrometers and the thickness is down to ~10 nm. The InSb nanosheets show a clear ambipolar behavior and a high electron mobility. Our work will open up new technology routes towards the development of InSb-based devices for applications in nanoelectronics, optoelectronics and quantum electronics, and for study of fundamental physical phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tailoring Magnetism of Perpendicularly Magnetized MnxGa Epitaxial Films on GaAs for Practical Applications

MnxGa films with high perpendicular anisotropy, coercivity and energy product have great application potential in ultrahigh-density perpendicular recording, permanent magnets, spin-transfer-torque memory and oscillators, magneto-resistance sensors and ferromagnetic metal/semiconductor heterostructure devices. Here we present a comprehensive diagram of effective magnetism-tailoring of perpendicularly magnetized MnxGa films grown on III-V semiconductor GaAs by using molecular-beam epitaxy for the first time, by systematically investigating the wide-range composition and detailed post-growth annealing effects. We show that the (001)-orientated MnxGa films with L10 or D022 ordering could be crystallized on GaAs in a very wide composition range from x=0.76 to 2.6. L10-ordered MnxGa films show robust magnetization, high remanent ratio, giant perpendicular anisotropy, high intrinsic and extrinsic coercivity, and large energy product, which make this kind of material favorable for perpendicular magnetic recording, high-performance spintronic devices and permanent magnet applications. In contrast, D022-ordered films exhibit lower perpendicular anisotropy and weaker magnetism. Post-growth annealing MnxGa films studies reveal high thermal-stability up to 450 oC, and effective tailoring of magnetic properties can be realized by prolonging annealing at 450 oC. These results would be helpful for understanding this kind of material and designing new spintronic devices for specific practical applications.

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preprint2012arXiv

Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product

We present the fascinating magnetic properties in homogenous noble-metal-free and rare-earth-free L10-Mn1.5Ga epitaxial films on GaAs (001), including ultrahigh perpendicular coercivity remarkably tunable from 8.1 to 42.8 kOe, giant perpendicular magnetocrystalline anisotropy with a maximum of 22.9 Merg/cc, easily controllable magnetization from 27.3 to 270.5 emu/cc, excellent squareness exceeding 0.94 and large magnetic energy product up to 2.6 MGOe. These magnificent room-temperature magnetic characteristics make our L10-Mn1.5Ga films multifunctional as outstanding and cost-effective alternative for not only perpendicular magnetic recording bits with areal density over 30 Tb inch-2 and thermal stability over 60 years, but variety of novel devices with high magnetic-noise immunity and thermal stability like spin-torque MRAMs and oscillators pillars below 5 nm in dimension, and giant magnetoresistance sensors able to measure high fileds up to 42 kOe . Moreover, this kind of materials can also be expected as permanent magnets for replacing the expensive rare-earth magnets widely used today.

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