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Source author record

Shan Guan

Shan Guan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallphysics.soc-phSocial and Information Networksphysics.app-phphysics.comp-phquant-ph

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Published work

13 published item(s)

preprint2021arXiv

The emergent linear Rashba spin-orbit coupling offering the fast manipulation of hole-spin qubits in germanium

The electric dipole spin resonance (EDSR) combining strong spin-orbit coupling (SOC) and electric-dipole transitions facilitates fast spin control in a scalable way, which is the critical aspect of the rapid progress made recently in germanium (Ge) hole-spin qubits. However, a puzzle is raised because centrosymmetric Ge lacks the Dresselhaus SOC, a key element in the initial proposal of the hole-based EDSR. Here, we demonstrate that the recently uncovered finite k-linear Rashba SOC of 2D holes offers fast hole spin control via EDSR with Rabi frequencies in excellent agreement with experimental results over a wide range of driving fields. We also suggest that the Rabi frequency can reach 500 MHz under a higher gate electric field or multiple GHz in a replacement by [110]oriented wells. These findings bring a deeper understanding for hole-spin qubit manipulation and offer design principles to boost the gate speed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergence of the strong tunable linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum

Two-dimensional hole gases in semiconductor quantum wells are promising platforms for spintronics and quantum computation but suffer from the lack of the $\bf{k}$-linear term in the Rashba spin-orbit coupling (SOC), which is essential for spin manipulations without magnetism and commonly believed to be a $\bf{k}$-cubic term as the lowest order. Here, contrary to conventional wisdom, we uncover a strong and tunable $\bf{k}$-linear Rashba SOC in two-dimensional hole gases (2DHG) of semiconductor quantum wells by performing atomistic pseudopotential calculations combined with an effective Hamiltonian for a model system of Ge/Si quantum wells. Its maximal strength exceeds 120 meVÅ, comparable to the highest values reported in narrow bandgap III-V semiconductor 2D electron gases, which suffers from short spin lifetime due to the presence of nuclear spin. We also illustrate that this emergent $\bf{k}$-linear Rashba SOC is a first-order direct Rashba effect, originating from a combination of heavy-hole-light-hole mixing and direct dipolar intersubband coupling to the external electric field. These findings confirm Ge-based 2DHG to be an excellent platform towards large-scale quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-dimensional antiferromagnetic Dirac fermions in monolayer TaCoTe$_2$

Dirac point in two-dimensional (2D) materials has been a fascinating subject of research. Recently, it has been theoretically predicted that Dirac point may also be stabilized in 2D magnetic systems. However, it remains a challenge to identify concrete 2D materials which host such magnetic Dirac point. Here, based on first-principles calculations and theoretical analysis, we propose a stable 2D material, the monolayers TaCoTe$_2$, as an antiferromagnetic (AFM) 2D Dirac material. We show that it has an AFM ground state with an out-of-plane Néel vector. It hosts a pair of 2D AFM Dirac points on the Fermi level in the absence of spin-orbit coupling (SOC). When the SOC is considered, a small gap is opened at the original Dirac points. Meanwhile, another pair of Dirac points appear on the Brillouin zone boundary below the Fermi level, which are robust under SOC and have a type-II dispersion. Such a type-II AFM Dirac point has not been observed before. We further show that the location of this Dirac point as well as its dispersion type can be controlled by tuning the Néel vector orientation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley-dependent properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$

In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSi$_{2}$As$_{4}$, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$. We show that these materials are semiconductors, with a pair of Dirac-type valleys located at the corners of the hexagonal Brillouin zone. Due to the broken inversion symmetry and the effect of spin-orbit coupling, the valley fermions manifest spin-valley coupling, valley-contrasting Berry curvature, and valley-selective optical circular dichroism. We also construct the low-energy effective model for the valleys, calculate the spin Hall conductivity and the permittivity, and investigate the strain effect on the band structure. Our result reveals interesting valley physics in monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$, suggesting their great potential for valleytronics and spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Valley-Layer Coupling: A New Design Principle for Valleytronics

We introduce the concept of valley-layer coupling (VLC) in two-dimensional materials, where the low-energy electronic states in the emergent valleys have valley-contrasted layer polarization such that each state is spatially localized on the top or bottom super-layer. The VLC enables a direct coupling between valley and gate electric field, opening a new route towards electrically controlled valleytronics. We analyze the symmetry requirements for the system to host VLC, demonstrate our idea via first-principles calculations and model analysis of a concrete 2D material example, and show that an electric, continuous, wide-range, and switchable control of valley polarization can be achieved by VLC. Furthermore, we find that systems with VLC can exhibit other interesting physics, such as valley-contrasting linear dichroism and optical selection of the electric polarization of interlayer excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Blue Phosphorene Oxide: Strain-tunable Quantum Phase Transitions and Novel 2D Emergent Fermions

Tunable quantum phase transitions and novel emergent fermions in solid state materials are fascinating subjects of research. Here, we propose a new stable two-dimensional (2D) material, the blue phosphorene oxide (BPO), which exhibits both. Based on first-principles calculations, we show that its equilibrium state is a narrow-bandgap semiconductor with three bands at low energy. Remarkably, a moderate strain can drive a semiconductor-to-semimetal quantum phase transition in BPO. At the critical transition point, the three bands cross at a single point at Fermi level, around which the quasiparticles are a novel type of 2D pseudospin-1 fermions. Going beyond the transition, the system becomes a symmetry-protected semimetal, for which the conduction and valence bands touch quadratically at a single Fermi point that is protected by symmetry, and the low-energy quasiparticles become another novel type of 2D double Weyl fermions. We construct effective models characterizing the phase transition and these novel emergent fermions, and we point out several exotic effects, including super Klein tunneling, supercollimation, and universal optical absorbance. Our result reveals BPO as an intriguing platform for the exploration of fundamental properties of quantum phase transitions and novel emergent fermions, and also suggests its great potential in nanoscale device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electronic, Dielectric, and Plasmonic Properties of Two-Dimensional Electride Materials X$_2$N (X=Ca, Sr): A First-Principles Study

Based on first-principles calculations, we systematically study the electronic, dielectric, and plasmonic properties of two-dimensional (2D) electride materials X$_2$N (X=Ca, Sr). We show that both Ca$_2$N and Sr$_2$N are stable down to monolayer thickness. For thicknesses larger than 1-monolayer (1-ML), there are 2D anionic electron layers confined in the regions between the [X$_2$N]$^+$ layers. These electron layers are strongly trapped and have weak coupling between each other. As a result, for the thickness dependence of many properties such as the surface energy, work function, and dielectric function, the most dramatic change occurs when going from 1-ML to 2-ML. For both bulk and few-layer Ca$_2$N and Sr$_2$N, the in-plane and out-of-plane real components of their dielectric functions have different signs in an extended frequency range covering the near infrared, indicating their potential applications as indefinite media. We find that bulk Ca$_2$N and Sr$_2$N could support surface plasmon modes in the near infrared range. Moreover, tightly-bounded plasmon modes could exist in their few-layer structures. These modes have significantly shorter wavelengths (~few tens of nanometers) compared with that of conventional noble metal materials, suggesting their great potential for plasmonic devices with much smaller dimensions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large-Gap Quantum Spin Hall Insulator in single layer bismuth monobromide Bi$_{4}$Br$_{4}$

Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels protected by the time-reversal symmetry. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of $\sim$0.18 eV, in single-layer Bi$_{4}$Br$_{4}$, which could be exfoliated from its three-dimensional bulk material due to the weakly-bonded layered structure. The band gap of single-layer Bi$_{4}$Br$_{4}$ is tunable via strain engineering, and the QSH phase is robust against external strain. In particular, because this material consists of special one-dimensional molecular chain as its basic building block, the single layer Bi$_{4}$Br$_{4}$ could be easily torn to ribbons with clean and atomically sharp edges, which are much desired for the observation and application of topological edge states. Our work thus provides a new promising material for experimental studies and practical applications of QSH effect.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain effects on electronic and optic properties of monolayer C$_2$N holey two-dimensional crystals

A new two-dimensional material, the C$_2$N holey 2D (C$_2$N-$h$2D) crystal, has recently been synthesized. Here we investigate the strain effects on the properties of this new material by first-principles calculations. We show that the material is quite soft with a small stiffness constant and can sustain large strains $\geq 12\%$. It remains a direct gap semiconductor under strain and the bandgap size can be tuned in a wide range as large as 1 eV. Interestingly, for biaxial strain, a band crossing effect occurs at the valence band maximum close to a 8\% strain, leading to a dramatic increase of the hole effective mass. Strong optical absorption can be achieved by strain tuning with absorption coefficient $\sim10^6$ cm$^{-1}$ covering a wide spectrum. Our findings suggest the great potential of strain-engineered C$_2$N-$h$2D in electronic and optoelectronic device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Low-Energy Effective Hamiltonian for Giant-Gap Quantum Spin Hall Insulators in Honeycomb X-Hydride/Halide (X=N-Bi) Monolayers

Using the tight-binding method in combination with first-principles calculations, we systematically derive a low-energy effective Hilbert subspace and Hamiltonian with spin-orbit coupling for two-dimensional hydrogenated and halogenated group-V monolayers. These materials are proposed to be giant-gap quantum spin Hall insulators with record huge bulk band gaps opened by the spin-orbit coupling at the Dirac points, e.g., from 0.74 to 1.08 eV in Bi\textit{X} (\textit{X} = H, F, Cl, and Br) monolayers. We find that the low-energy Hilbert subspace mainly consists of $p_{x}$ and $p_{y}$ orbitals from the group-V elements, and the giant first-order effective intrinsic spin-orbit coupling is from the on-site spin-orbit interaction. These features are quite distinct from those of group-IV monolayers such as graphene and silicene. There, the relevant orbital is $p_z$ and the effective intrinsic spin-orbit coupling is from the next-nearest-neighbor spin-orbit interaction processes. These systems represent the first real 2D honeycomb lattice materials in which the low-energy physics is associated with $p_{x}$ and $p_{y}$ orbitals. A spinful lattice Hamiltonian with an on-site spin-orbit coupling term is also derived, which could facilitate further investigations of these intriguing topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interconnecting bilayer networks

A typical complex system should be described by a supernetwork or a network of networks, in which the networks are coupled to some other networks. As the first step to understanding the complex systems on such more systematic level, scientists studied interdependent multilayer networks. In this letter, we introduce a new kind of interdependent multilayer networks, i.e., interconnecting networks, for which the component networks are coupled each other by sharing some common nodes. Based on the empirical investigations, we revealed a common feature of such interconnecting networks, namely, the networks with smaller averaged topological differences of the interconnecting nodes tend to share more nodes. A very simple node sharing mechanism is proposed to analytically explain the observed feature of the interconnecting networks.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Empirical study on some interconnecting bilayer networks

This manuscript serves as an online supplement of a preprint, which presents a study on a kind of bilayer networks where some nodes (called interconnecting nodes) in two layers merge. A model showing an important general property of the bilayer networks is proposed. Then the analytic discussion of the model is compared with empirical conclusions. We present all the empirical observations in this online supplement.

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preprint2010arXiv

Study on some interconnecting bilayer networks

We present a model, in which some nodes (called interconnecting nodes) in two networks merge and play the roles in both the networks. The model analytic and simulation discussions show a monotonically increasing dependence of interconnecting node topological position difference and a monotonically decreasing dependence of the interconnecting node number on function difference of both networks. The dependence function details do not influence the qualitative relationship. This online manuscript presents the details of the model simulation and analytic discussion, as well as the empirical investigations performed in eight real world bilayer networks. The analytic and simulation results with different dependence function forms show rather good agreement with the empirical conclusions.

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