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Researcher profile

Ji-Eun Lee

Ji-Eun Lee contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciArtificial Intelligencecond-mat.str-elcs.CYMachine Learning

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Published work

4 published item(s)

preprint2026arXiv

Let Me Try Again: Examining Replay Behavior by Tracing Students' Latent Problem-Solving Pathways

Prior research has shown that students' problem-solving pathways in game-based learning environments reflect their conceptual understanding, procedural knowledge, and flexibility. Replay behaviors, in particular, may indicate productive struggle or broader exploration, which in turn foster deeper learning. However, little is known about how these pathways unfold sequentially across problems or how the timing of replays and other problem-solving strategies relates to proximal and distal learning outcomes. This study addresses these gaps using Markov Chains and Hidden Markov Models (HMMs) on log data from 777 seventh graders playing the game-based learning platform of From Here to There!. Results show that within problem sequences, students often persisted in states or engaged in immediate replay after successful completions, while across problems, strong self-transitions indicated stable strategic pathways. Four latent states emerged from HMMs: Incomplete-dominant, Optimal-ending, Replay, and Mixed. Regression analyses revealed that engagement in replay-dominant and optimal-ending states predicted higher conceptual knowledge, flexibility, and performance compared with the Incomplete-dominant state. Immediate replay consistently supported learning outcomes, whereas delayed replay was weakly or negatively associated in relation to Non-Replay. These findings suggest that replay in digital learning is not uniformly beneficial but depends on timing, with immediate replay supporting flexibility and more productive exploration.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Tunable Kondo resonance at a pristine two-dimensional Dirac semimetal on a Kondo insulator

Proximity of two different materials leads to an intricate coupling of quasiparticles so that an unprecedented electronic state is often realized at the interface. Here, we demonstrate a resonance-type many-body ground state in graphene, a non-magnetic two-dimensional Dirac semimetal, when grown on SmB6, a Kondo insulator, via thermal decomposition of fullerene molecules. This ground state is typically observed in three-dimensional magnetic materials with correlated electrons. Above the characteristic Kondo temperature of the substrate, the electron band structure of pristine graphene remains almost intact. As temperature decreases, however, the Dirac fermions of graphene become hybridized with the Sm 4f states. Remarkable enhancement of the hybridization and Kondo resonance is observed with further cooling and increasing charge carrier density of graphene, evidencing the Kondo screening of the Sm 4f local magnetic moment by the conduction electrons of graphene at the interface. These findings manifest the realization of the Kondo effect in graphene by the proximity of SmB6 that is tuned by temperature and charge carrier density of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping

Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the possible formation of such an interface. Ta adsorption on the surface of a p-doped SnSe shifts the valence band maximum towards higher binding energy due to the charge transfer from Ta to SnSe that is highly localized at the surface due to the layered structure of SnSe. As a result, the charge carriers of the surface are changed from holes of its bulk characteristics to electrons, while the bulk remains as a p-type semiconductor. This observation suggests that the well-defined interface of a p-n junction with an atomically thin {\it n}-region is formed between Ta-adsorbed surface and bulk.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Concomitant enhancement of electron-phonon coupling and electron-electron interaction in graphene decorated with ytterbium

The interplay between electron-electron interaction and electron-phonon coupling has been one of the key issues in graphene as it can provide information on the origin of enhanced electron-phonon coupling in graphene by foreign atoms. In ytterbium-decorated graphene on SiC substrate, electron-phonon coupling exhibits strong enhancement compared to that of as-grown graphene. Based on angle-resolved photoemission study, the presence of ytterbium is also found to result in the decrease of Fermi velocity, revealing the enhancement of electron-electron interaction within the Fermi liquid theory. Our finding on the concomitant enhancement of electron-electron interaction and electron-phonon coupling suggests a possibility of the interplay between the two representative many-body interactions in graphene decorated with foreign atoms.

0 citations0 reviewsNo code linkedOpen access