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Hyejin Ryu

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Published work

25 published item(s)

preprint2021arXiv

Tunable Kondo resonance at a pristine two-dimensional Dirac semimetal on a Kondo insulator

Proximity of two different materials leads to an intricate coupling of quasiparticles so that an unprecedented electronic state is often realized at the interface. Here, we demonstrate a resonance-type many-body ground state in graphene, a non-magnetic two-dimensional Dirac semimetal, when grown on SmB6, a Kondo insulator, via thermal decomposition of fullerene molecules. This ground state is typically observed in three-dimensional magnetic materials with correlated electrons. Above the characteristic Kondo temperature of the substrate, the electron band structure of pristine graphene remains almost intact. As temperature decreases, however, the Dirac fermions of graphene become hybridized with the Sm 4f states. Remarkable enhancement of the hybridization and Kondo resonance is observed with further cooling and increasing charge carrier density of graphene, evidencing the Kondo screening of the Sm 4f local magnetic moment by the conduction electrons of graphene at the interface. These findings manifest the realization of the Kondo effect in graphene by the proximity of SmB6 that is tuned by temperature and charge carrier density of graphene.

preprint2020arXiv

A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping

Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the possible formation of such an interface. Ta adsorption on the surface of a p-doped SnSe shifts the valence band maximum towards higher binding energy due to the charge transfer from Ta to SnSe that is highly localized at the surface due to the layered structure of SnSe. As a result, the charge carriers of the surface are changed from holes of its bulk characteristics to electrons, while the bulk remains as a p-type semiconductor. This observation suggests that the well-defined interface of a p-n junction with an atomically thin {\it n}-region is formed between Ta-adsorbed surface and bulk.

preprint2020arXiv

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scanning Tunneling Microscopy (STM) images. However, TEM imaging measurements do not provide direct access to the electronic structure of individual defects; and while Scanning Tunneling Spectroscopy (STS) is a direct probe of local electronic structure, the interpretation of the chemical nature of atomically-resolved STM images of point defects in 2D-TMDs can be ambiguous. As a result, the assignment of point defects as vacancies or substitutional atoms of different kinds in 2D-TMDs, and their influence on their electronic properties, has been inconsistent and lacks consensus. Here, we combine low-temperature non-contact atomic force microscopy (nc-AFM), STS, and state-of-the-art ab initio density functional theory (DFT) and GW calculations to determine both the structure and electronic properties of the most abundant individual chalcogen-site defects common to 2D-TMDs. Surprisingly, we observe no IGS for any of the chalcogen defects probed. Our results and analysis strongly suggest that the common chalcogen defects in our 2D-TMDs, prepared and measured in standard environments, are substitutional oxygen rather than vacancies.

preprint2020arXiv

Visualization of multifractal superconductivity in a two-dimensional transition metal dichalcogenide in the weak-disorder regime

Eigenstate multifractality is a distinctive feature of non-interacting disordered metals close to a metal-insulator transition, whose properties are expected to extend to superconductivity. While multifractality in three dimensions (3D) only develops near the critical point for specific strong-disorder strengths, multifractality in 2D systems is expected to be observable even for weak disorder. Here we provide evidence for multifractal features in the superconducting state of an intrinsic weakly disordered single-layer NbSe$_2$ by means of low-temperature scanning tunneling microscopy/spectroscopy. The superconducting gap, characterized by its width, depth and coherence peaks' amplitude, shows a characteristic spatial modulation coincident with the periodicity of the quasiparticle interference pattern. Spatial inhomogeneity of the superconducting gap width, proportional to the local order parameter in the weak-disorder regime, follows a log-normal statistical distribution as well as a power-law decay of the two-point correlation function, in agreement with our theoretical model. Furthermore, the experimental singularity spectrum f($α$) shows anomalous scaling behavior typical from 2D weakly disordered systems.

preprint2019arXiv

Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2

Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunneling microscopy and angle-resolved photoemission. Our combined experimental and theoretical study indicates that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by novel orbital texture. Inclusion of interlayer coupling weakens the insulating phase in 1T-TaSe2, as seen by strong reduction of its energy gap and quenching of its correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. Our results establish single-layer 1T-TaSe2 as a useful new platform for investigating strong correlation physics in two dimensions.

preprint2016arXiv

ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)

SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular tothe (111) surface, demonstrate the projected Dirac cones at the Gamma_bar and M_bar points of the surface Brillouinzone. In addition, we observe a Dirac-cone-like band structure at the Gamma point of the bulk Brillouin zone,whose Dirac energy is largely different from those at the Gamma_bar and M_bar points.

preprint2016arXiv

Electronic Griffiths Phase in the Te - Doped Semiconductor FeSb$_{2}$

We report on the emergence of an Electronic Griffiths Phase (EGP) in the doped semiconductor FeSb$_{2}$, predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition (MIT). Magnetic, transport, and thermodynamic measurements of Fe(Sb$_{1-x}$Te$_{x}$)$_{2}$ single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The EGP states are found on the metallic boundary, between the insulating state ($x = 0$) and a long-range albeit weak magnetic order ($x \geq 0.075$).

preprint2016arXiv

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy (MBE). The combination of angle-resolved photoemission (ARPES), scanning tunneling microscopy/spectroscopy (STM/STS), and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional 3D semiconductors, yet small as compared to other 2D transition metal dichalcogennides (TMDCs) semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.

preprint2016arXiv

Evidence of superconductivity-induced phonon spectra renormalization in alkali-doped iron selenides

Polarized Raman scattering spectra of superconducting K$_x$Fe$_{2-y}$Se$_2$ and nonsuperconducting K$_{0.8}$Fe$_{1.8}$Co$_{0.2}$Se$_2$ single crystals were measured in a temperature range from 10 K up to 300 K. Two Raman active modes from the $I4/mmm$ phase and seven from the $I4/m$ phase are observed in frequency range from 150 to 325 cm$^{-1}$ in both compounds, suggesting that K$_{0.8}$Fe$_{1.8}$Co$_{0.2}$Se$_2$ single crystal also has two-phase nature. Temperature dependence of Raman mode energy is analyzed in terms of lattice thermal expansion and phonon-phonon interaction. Temperature dependence of Raman mode linewidth is dominated by temperature-induced anharmonic effects. It is shown that change of Raman mode energy with temperature is dominantly driven by thermal expansion of the crystal lattice. Abrupt change of the A$_{1g}$ mode energy near $T_C$ was observed in K$_x$Fe$_{2-y}$Se$_2$, whereas it is absent in non-superconducting K$_{0.8}$Fe$_{1.8}$Co$_{0.2}$Se$_2$. Phonon energy hardening at low temperatures in the superconducting sample is a consequence of superconductivity-induced redistribution of the electronic states below critical temperature.

preprint2016arXiv

Insulating and metallic spin glass in K$_{x}$Fe$_{2-δ-y}$Ni$_{y}$Se$_{2}$ (0.06 $\leq$ $y$ $\leq$ 1.44) single crystals

We report electron doping effects by Ni in K$_{x}$Fe$_{2-δ-y}$Ni$_{y}$Se$_{2}$ (0.06 $\leq$ $y$ $\leq$ 1.44) single crystal alloys. A rich ground state phase diagram is observed. Small amount of Ni ($\sim$ 4\%) suppressed superconductivity below 1.8 K, inducing insulating spin glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry $I4/mmm$ with no phase separation whereas both $I4/m + I4/mmm$ space groups were detected in the phase separated crystals when concentration of Ni $<$ Fe. The absence of superconductivity coincides with the absence of crystalline Fe vacancy order.

preprint2016arXiv

Magnetic excitations in the spin-1/2 triangular-lattice antiferromagnet Cs$_2$CuBr$_4$

We report on high-field electron spin resonance (ESR) studies of magnetic excitations in the spin-1/2 triangular-lattice antiferromagnet Cs$_2$CuBr$_4$. Frequency-field diagrams of ESR excitations are measured for different orientations of magnetic fields up to 25 T. We show that the substantial zero-field energy gap, $Δ\approx9.5$ K, observed in the low-temperature excitation spectrum of Cs$_2$CuBr$_4$ [Zvyagin $et~al.$, Phys. Rev. Lett. 112, 077206 (2014)], is present well above $T_N$. Noticeably, the transition into the long-range magnetically ordered phase does not significantly affect the size of the gap, suggesting that even below $T_N$ the high-energy spin dynamics in Cs$_2$CuBr$_4$ is determined by short-range-order spin correlations. The experimental data are compared with results of model spin-wave-theory calculations for spin-1/2 triangle-lattice antiferromagnet.

preprint2016arXiv

Multiband behavior and non-metallic low-temperature state of K$_{0.50}$Na$_{0.24}$Fe$_{1.52}$Se$_{2}$

We report evidence for multiband transport and an insulating low-temperature normal state in superconducting K$_{0.50}$Na$_{0.24}$Fe$_{1.52}$Se$_{2}$ with $T_{c}\approx 20$ K. The temperature-dependent upper critical field, $H_{c2}$, is well described by a two-band BCS model. The normal-state resistance, accessible at low temperatures only in pulsed magnetic fields, shows an insulating logarithmic temperature dependence as $T \rightarrow 0$ after superconductivity is suppressed. This is similar as for high-$T_{c}$ copper oxides and granular type-I superconductors, suggesting that the superconductor-insulator transition observed in high magnetic fields is related to intrinsic nanoscale phase separation.

preprint2016arXiv

Multiband electronic transport in $α$-Yb$_{1-x}$Sr$_{x}$AlB$_{4}$ [x = 0, 0.19(3)] single crystals

We report on the evidence for the multiband electronic transport in $α$-YbAlB$_{4}$ and $α$-Yb$_{0.81(2)}$Sr$_{0.19(3)}$AlB$_{4}$. Multiband transport reveals itself below 10 K in both compounds via Hall effect measurements, whereas anisotropic magnetic ground state sets in below 3 K in $α$-Yb$_{0.81(2)}$Sr$_{0.19(3)}$AlB$_{4}$. Our results show that Sr$^{2+}$ substitution enhances conductivity, but does not change the quasiparticle mass of bands induced by heavy fermion hybridization.

preprint2016arXiv

Observation of charge density wave order in 1D mirror twin boundaries of single-layer MoSe2

Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect engineering. Here we provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries in single-layer MoSe2. Our low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a substantial bandgap of 60 - 140 meV opening at the Fermi level in the otherwise one dimensional metallic structure. We find an energy-dependent periodic modulation in the density of states along the mirror twin boundary, with a wavelength of approximately three lattice constants. The modulations in the density of states above and below the Fermi level are spatially out of phase, consistent with charge density wave order. In addition to the electronic characterization, we determine the atomic structure and bonding configuration of the one-dimensional mirror twin boundary by means of high-resolution non-contact atomic force microscopy. Density functional theory calculations reproduce both the gap opening and the modulations of the density of states.

preprint2016arXiv

Raman spectroscopy of K_xCo_{2-y}Se_2 single crystals near the ferromagnet-paramagnet transition

Polarized Raman scattering spectra of the K_xCo_{2-y}Se_2 single crystals reveal the presence of two phonon modes, assigned as of the A_{1g} and B_{1g} symmetry. Absence of additional modes excludes the possibility of vacancy ordering, unlike in K_xFe_{2-y}Se_2. The ferromagnetic (FM) phase transition at T_c\approx 74 K leaves a clear fingerprint on the temperature dependence of the Raman mode energy and linewidth. For T>T_c the temperature dependence looks conventional, driven by the thermal expansion and anharmonicity. The Raman modes are rather broad due to the electron-phonon coupling increased by the disorder and spin fluctuation effects. In the FM phase the phonon frequency of both modes increases, while an opposite trend is seen in their linewidth: the A_{1g} mode narrows in the FM phase, whereas the B_{1g} mode broadens. We argue that the large asymmetry and anomalous frequency shift of the B_{1g} mode is due to the coupling of spin fluctuations and vibration. Our density functional theory (DFT) calculations for the phonon frequencies agree rather well with the Raman measurements, with some discrepancy being expected since the DFT calculations neglect the spin fluctuations.

preprint2016arXiv

Spin glass in semiconducting KFe$_{1.05}$Ag$_{0.88}$Te$_{2}$ single crystals

We report discovery of KFe$_{1.05}$Ag$_{0.88}$Te$_{2}$ single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe$_{0.85}$Ag$_{1.15}$Te$_{2}$. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

preprint2016arXiv

Sustained phase separation and spin glass in Co-doped K$_{x}$Fe$_{2-y}$Se$_{2}$ single crystals

We present Co substitution effects in K$_{x}$Fe$_{2-y-z}$Co$_{z}$Se$_{2}$ (0.06 $\leq$ $z$ $\leq$ 1.73) single crystal alloys. By 3.5\% of Co doping superconductivity is suppressed whereas phase separation of semiconducting K$_{2}$Fe$_{4}$Se$_{5}$ and superconducting/metallic K$_{x}$Fe$_{2}$Se$_{2}$ is still present. We show that the arrangement and distribution of superconducting phase (stripe phase) is connected with the arrangement of K, Fe and Co atoms. Semiconducting spin glass is found in proximity to superconducting state, persisting for large Co concentrations. At high Co concentrations ferromagnetic metallic state emerges above the spin glass. This is coincident with changes of the unit cell, arrangement and connectivity of stripe conducting phase.

preprint2015arXiv

Characterization of collective ground states in single-layer NbSe2

Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW = 33 K and superconductivity sets in at Tc = 7.2 K. Below Tc these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single 2D layer of NbSe2 by means of low temperature scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3x3 CDW order in NbSe2 remains intact in 2D. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of Δ = 4 meV at the Fermi energy, which is accessible via STS due to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe2, thus providing new insight into CDW formation and superconductivity in this model strongly-correlated system.

preprint2014arXiv

Nonmetallic Low-Temperature Normal State of K0.70Fe1.46Se1.85Te0.15

The normal-state in-plane resistivity below the zero-field superconducting transition temperature $T_c$ and the upper critical field Hc2 were measured by suppressing superconductivity in pulsed magnetic fields for K0.70Fe1.46Se1.85Te0.15. The normal-state resistivity $ρ_{ab}$ is found to increase logarithmically with decrasing temperature as $\frac{T}{T_c}\rightarrow 0$. Similar to granular metals, our results suggest that a superconductor - insulator transition below zero-field T$_{c}$ may be induced in high magnetic fields. This is related to the intrinsic real-space phase-separated states common to all inhomogeneous superconductors.

preprint2012arXiv

Local structural disorder and superconductivity in KxFe2-ySe2

We report significantly enhanced magnetic moment in K0.69(2)Fe1.45(1)Se2.00(1) single crystals with sharp Tc and bulk superconductivity obtained by postannealing and quenching process. There are two Fe sites in the K0.69(2)Fe1.45(1)Se2.00(1) unit cell: Fe1, which has higher symmetry with longer average Fe-Se bond length, and Fe2, which has lower symmetry with shorter average Fe-Se bond length. Temperature-dependent x-ray absorption fine-structure (XAFS) analysis results on quenched and as-grown K0.69(2)Fe1.45(1)Se2.00(1) crystals show that quenched K0.69(2)Fe1.45(1)Se2.00(1) have increased average Fe-Se bond length and decreased static disorder. Our results indicate that nonzero population of Fe1 sites is the key structural parameter that governs the bulk superconductivity. We also show clear evidence that Fe1 sites carry higher magnetic moment than Fe2 sites.

preprint2012arXiv

Multiband effects on beta-FeSe single crystals

We present the upper critical fields Hc2(T) and Hall effect in beta-FeSe single crystals. The Hc2(T) increases as the temperature is lowered for field applied parallel and perpendicular to (101), the natural growth facet of the crystal. The Hc2(T) for both field directions and the anisotropy at low temperature increase under pressure. Hole carriers are dominant at high magnetic fields. However, the contribution of electron-type carriers is significant at low fields and low temperature. Our results show that multiband effects dominate Hc2(T) and electronic transport in the normal state.

preprint2012arXiv

Physical properties of KxNi2-ySe2 single crystals

We have synthesized K0.95(1)Ni1.86(2)Se2 single crystals. The single crystals contain K and Ni deficiencies not observed in KNi2Se2 polycrystals. Unlike KNi2Se2 polycrystals, the superconductivity is absent in single crystals. The detailed physical property study indicates that the K0.95Ni1.86Se2 single crystals exhibit Fermi liquid behavior with heavy-fermion-like characteristics. Transition from the high temperature local charge density wave state to heavy fermion state below T ~ 30 K results in an enhancement of electron-like carrier density whereas magnetic susceptibility shows little anisotropy and suggests presence of both itinerant and localized Ni orbitals.

preprint2012arXiv

Structure and physical properties of new layered iron oxychalcogenide BaFe2OSe2

We have successfully synthesized a new layered iron oxychalcogenide BaFe2OSe2 single crystal. This compound is built up of Ba and Fe-Se(O) layers alternatively stacked along the c-axis. The Fe-Se(O) layers contain double chains of edge-shared Fe-Se(O) tetrahedra that propagate along the b-axis and are bridged by oxygen along the a-axis. Physical property measurements indicate that BaFe2OSe2 is a semiconductor without the Curie-Weiss behavior up to 350 K. There is a possible long range antiferromagnetic (AFM) transition at 240 K, corresponding to the peak in specific heat measurement and two glassy transitions at 115 K and 43 K. The magnetic entropy up to 300 K is much smaller than the expected value for Fe2+ in tetrahedral crystal fields and Mosbauer spectrum indicates that long range magnetic order is unlikely at 294 K. Both results suggest that a short range magnetic correlations exist above the room temperature.

preprint2011arXiv

Anisotropy in BaFe2Se3 single crystals with double chains of FeSe tetrahedra

We studied the anisotropy in physical properties of Ba1.00(4)Fe1.9(1)Se3.1(1) single crystals. BaFe2Se3 is a semiconductor below 300 K. Magnetization measurements show that there is a crossover from short-range antiferromagnetic (AFM) correlations at room temperature to a long-range AFM order with TN = 255 K. The anisotropy of magnetization is consistent with the previous neutron results. This crossover is supported by the heat-capacity measurement, where the phase-transition peak is absent at 255 K. The superconducting transition at about 10 K is likely due to the small amount of beta-FeSe impurities.

preprint2006arXiv

Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films

We fabricated Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films consisting of randomly dispersed NiFe2O4 nanoparticles in the Pb(Zr0.52Ti0.48)O3 matrix. The structural analysis revealed that the crystal axes of the NiFe2O4 nanoparticles are aligned with those of the ferroelectric matrix. The composite has good ferroelectric and magnetic properties. We measured the transverse and longitudinal components of the magnetoelectric voltage coefficient, which supports the postulate that the magnetoelectric effect comes from direct stress coupling between magnetostrictive NiFe2O4 and piezoelectric Pb(Zr0.52Ti0.48)O3 grains.