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Jeongsu Lee

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Published work

7 published item(s)

preprint2020arXiv

Spin-Lasers: Spintronics Beyond Magnetoresistance

Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics.

preprint2016arXiv

Magnetotransport signatures of the proximity exchange and spin-orbit couplings in graphene

Graphene on an insulating ferromagnetic substrate---ferromagnetic insulator or ferromagnetic metal with a tunnel barrier---is expected to exhibit giant proximity exchange and spin-orbit couplings. We use a realistic transport model of charge-disorder scattering and solve the linearized Boltzmann equation numerically exactly for the anisotropic Fermi contours of modified Dirac electrons to find magnetotransport signatures of these proximity effects: proximity anisotropic magnetoresistance, inverse spin-galvanic effect, and the planar Hall resistivity. We establish the corresponding anisotropies due to the exchange and spin-orbit couplings, with respect to the magnetization orientation. We also present parameter maps guiding towards optimal regimes for observing transport magnetoanisotropies in proximity graphene.

preprint2015arXiv

Toward high-frequency operation of spin lasers

Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying a uniaxial strain, it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin lasers which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency ($>200$ GHz) would significantly exceed the frequency range possible in conventional lasers.

preprint2013arXiv

Nodal "ground states" and orbital textures in semiconductor quantum dots

Conventional understanding implies that the ground state of a nonmagnetic quantum mechanical system should be nodeless. While this notion also provides a valuable guidance in understanding the ordering of energy levels in semiconductor nanostructures, there are reports that $\textit{nodal}$ ground states for holes are possible. However, the existence of such nodal states has been debated and even viewed merely as an artifact of a $\boldsymbol{k{\cdot}p}$ model. Using complementary approaches of both $\boldsymbol{k{\cdot}p}$ and tight-binding models, further supported by an effective Hamiltonian for a continuum model, we reveal that the nodal ground states in quantum dots are not limited to a specific approach. Remarkably, the emergence of the nodal hole states at the top of the valence band can be attributed to the formation of the orbital vortex textures through competition between the hole kinetic energy and the coupling to the conduction band states. We suggest an experimental test for our predictions of the reversed energy ordering and the existence of nodal ground states. We discuss how our findings and the studies of orbital textures could be also relevant for other materials systems.

preprint2012arXiv

Mapping between quantum dot and quantum well lasers: From conventional to spin lasers

We explore similarities between the quantum wells and quantum dots used as optical gain media in semiconductor lasers. We formulate a mapping procedure which allows a simpler, often analytical, description of quantum well lasers to study more complex lasers based on quantum dots. The key observation in relating the two classes of laser is that the influence of a finite capture time on the operation of quantum dot lasers can be approximated well by a suitable choice of the gain compression factor in quantum well lasers. Our findings are applied to the rate equations for both conventional (spin-unpolarized) and spin lasers in which spin-polarized carriers are injected optically or electrically. We distinguish two types of mapping that pertain to the steady-state and dynamical operation respectively and elucidate their limitations.

preprint2012arXiv

Tailoring Chirp in Spin-Lasers

The usefulness of semiconductor lasers is often limited by the undesired frequency modulation, or chirp, a direct consequence of the intensity modulation and carrier dependence of the refractive index in the gain medium. In spin-lasers, realized by injecting, optically or electrically, spin-polarized carriers, we elucidate paths to tailoring chirp. We provide a generalized expression for chirp in spin-lasers and introduce modulation schemes that could simultaneously eliminate chirp and enhance the bandwidth, as compared to the conventional (spin-unpolarized) lasers.

preprint2010arXiv

Spin Modulation in Semiconductor Lasers

We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal analyses, we elucidate how the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts. We reveal that the spin-polarized injection can lead to an enhanced bandwidth and desirable switching properties of spin-lasers.