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Jeil Jung

Jeil Jung appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.optics

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Published work

36 published item(s)

preprint2023arXiv

Commensuration torques and lubricity in double moire systems

We study the commensuration torques and layer sliding energetics of alternating twist trilayer graphene (t3G) and twisted bilayer graphene on hexagonal boron nitride (t2G/BN) that have two superposed moire interfaces. Lattice relaxations for typical graphene twist angles of $\sim 1^{\circ}$ in t3G or t2G/BN are found to break the out-of-plane layer mirror symmetry, give rise to layer rotation energy local minima dips of the order of $\sim 10^{-1}$ meV/atom at double moire alignment angles, and have sliding energy landscape minima between top-bottom layers of comparable magnitude. Moire superlubricity is restored for twist angles as small as $\sim 0.03^\circ$ away from alignment resulting in suppression of sliding energies by several orders of magnitude of typically $\sim 10^{-4}$ meV/atom, hence indicating the precedence of rotation over sliding in the double moire commensuration process.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electronic structure of lattice relaxed alternating twist tNG-multilayer graphene: from few layers to bulk AT-graphite

We calculate the electronic structure of AA'AA'...-stacked alternating twist N-layer (tNG) graphene for N = 3, 4, 5, 6, 8, 10, 20 layers and bulk alternating twist (AT) graphite systems where the lattice relaxations are modeled by means of molecular dynamics simulations. We show that the symmetric AA'AA'... stacking is energetically preferred among all interlayer sliding geometries for progressively added layers up to N=6. Lattice relaxations enhance electron-hole asymmetry, and reduce the magic angles with respect to calculations with fixed tunneling strengths that we quantify from few layers to bulk AT-graphite. Without a perpendicular electric field, the largest magic angle flat-band states locate around the middle following the largest eigenvalue eigenstate in a 1D-chain model of layers, while the density redistributes to outer layers for smaller magic twist angles corresponding to higher order effective bilayers in the 1D chain. A perpendicular electric field decouples the electronic structure into $N$ Dirac bands with renormalized Fermi velocities with distinct even-odd band splitting behaviors, showing a gap for N=4 while for odd layers a Dirac cone remains between the flat band gaps. The magic angle error tolerance estimated from density of states maxima expand progressively from $0.05^{\circ}$ in t2G to up to $0.2^{\circ}$ in AT-graphite, hence allowing a greater flexibility in multilayers. Decoupling of tNG into t2G with different interlayer tunneling proportional to the eigenvalues of a 1D layers chain allows to map tNG-multilayers bands onto those of periodic bulk AT-graphite's at different $k_z$ values. We also obtain the Landau level density of states in the quantum Hall regime for magnetic fields of up to 50~T and confirm the presence of nearly flat bands around which we can develop suppressed density of states gap regions by applying an electric field in N > 3 systems.

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preprint2022arXiv

Nearly flat bands in twisted triple bilayer graphene

We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling $ω$, twist angle $θ$, interlayer potential difference $Δ$, and top-bottom bilayers sliding vector $\boldsymbolτ$ for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and gap-opening through a finite interlayer potential difference $Δ$ allows the flattening of bands in t3BG down to $\sim 20$~meV for twist angles $θ\lesssim 2^{\circ}$ regardless of the stacking types. The easier isolation of the flat bands and associated reduction of Coulomb screening thanks to the intrinsic gaps of bilayer graphene for finite $Δ$ facilitate the formation of correlation-driven gaps when it is compared to the metallic phases of twisted trilayer graphene under electric fields. We obtain the stacking dependent Coulomb energy versus bandwidth $U/W \gtrsim 1$ ratios in the $θ$ and $Δ$ parameter space. We also present the expected $K$-valley Chern numbers for the lowest-energy nearly flat bands.

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preprint2022arXiv

Relaxation Effects in Twisted Bilayer Graphene: a Multi-Scale Approach

We present a multi-scale density functional theory (DFT) informed molecular dynamics and tight-binding (TB) approach to capture the interdependent atomic and electronic structures of twisted bilayer graphene. We calibrate the flat band magic angle to be at $θ_{\rm M} = 1.08^{\circ}$ by rescaling the interlayer tunneling for different atomic structure relaxation models as a way to resolve the indeterminacy of existing atomic and electronic structure models whose predicted magic angles vary widely between $0.9^\circ \sim 1.3^\circ$. The interatomic force fields are built using input from various stacking and interlayer distance dependent DFT total energies including the exact exchange and random phase approximation (EXX+RPA). We use a Fermi velocity of $\upsilon_{\rm F} \simeq 10^{6}$~m/s for graphene that is enhanced by about $\sim 15\%$ over the local density approximation (LDA) values. Based on this atomic and electronic structure model we obtain high-resolution spectral functions comparable with experimental angle-resolved photoemission spectra (ARPES). Our analysis of the interdependence between the atomic and electronic structures indicates that the intralayer elastic parameters compatible with the DFT-LDA, which are stiffer by $\sim$30\% than widely used reactive empirical bond order force fields, can combine with EXX+RPA interlayer potentials to yield the magic angle at $\sim 1.08^{\circ}$ without further rescaling of the interlayer tunneling.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Emergence of broken-symmetry states at half-integer band fillings in twisted bilayer graphene

The dominance of Coulomb interactions over kinetic energy of electrons in narrow, non-trivial moiré bands of magic-angle twisted bilayer graphene (TBG) gives rise to a variety of correlated phases such as correlated insulators, superconductivity, orbital ferromagnetism, Chern insulators and nematicity. Most of these phases occur at or near an integer number of carriers per moiré unit cell. Experimental demonstration of ordered states at fractional moiré band-fillings at zero applied magnetic field $B$, is a challenging pursuit. In this letter, we report the observation of states near half-integer band-fillings of $ν\approx 0.5$ and $\pm3.5$ at $B\approx 0$ in TBG proximitized by tungsten diselenide (WSe$_2$) through magnetotransport and thermoelectricity measurements. A series of Lifshitz transitions due to the changes in the topology of the Fermi surface implies the evolution of van Hove singularities (VHSs) of the diverging density of states (DOS) at a discrete set of partial fillings of flat bands. Furthermore, at a band filling of $ν\approx-0.5$, a symmetry-broken Chern insulator emerges at high $B$, compatible with the band structure calculations within a translational symmetry-broken supercell with twice the area of the original TBG moiré cell. Our results are consistent with a spin/charge density wave ground state in TBG in the zero $B$-field limit.

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preprint2020arXiv

Electron-hole asymmetry and band gaps of commensurate double moire patterns in twisted bilayer graphene on hexagonal boron nitride

Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here we show that tBG/BN commensurate double moire patterns can be classified into two types, each favoring the narrowing of either the conduction or valence bands on average, and obtain the evolution of the bands as a function of the interlayer sliding vectors and electric fields. Finite valley Chern numbers $\pm 1$ are found in a wide range of parameter space when the moire bands are isolated through gaps, while the local density of states associated to the flat bands are weakly affected by the BN substrate invariably concentrating around the AA-stacked regions of tBG. We illustrate the impact of the BN substrate for a particularly pronounced electron-hole asymmetric band structure by calculating the optical conductivities of twisted bilayer graphene near the magic angle as a function of carrier density. The band structures corresponding to other $N$-multiple commensurate moire period ratios indicate it is possible to achieve narrow width $W \lesssim 30$ meV isolated folded band bundles for tBG angles $θ\lesssim 1^{\circ}$.

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preprint2020arXiv

Gate tunable topological flat bands in twisted monolayer-bilayer graphene

We investigate the band structure of twisted monolayer-bilayer graphene (tMBG), or twisted graphene on bilayer graphene (tGBG), as a function of twist angles and perpendicular electric fields in search of optimum conditions for achieving isolated nearly flat bands. Narrow bandwidths comparable or smaller than the effective Coulomb energies satisfying $U_{\textrm{eff}} /W \gtrsim 1$ are expected for twist angles in the range of $0.3^{\circ} \sim 1.5^{\circ}$, more specifically in islands around $θ\sim 0.5^{\circ}, \, 0.85^{\circ}, \,1.3^{\circ}$ for appropriate perpendicular electric field magnitudes and directions. The valley Chern numbers of the electron-hole asymmetric bands depend intrinsically on the details of the hopping terms in the bilayer graphene, and extrinsically on factors like electric fields or average staggered potentials in the graphene layer aligned with the contacting hexagonal boron nitride substrate. This tunability of the band isolation, bandwidth, and valley Chern numbers makes of tMBG a more versatile system than twisted bilayer graphene for finding nearly flat bands prone to strong correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Metallic Network of Topological Domain Walls

We study the electronic and transport properties of a network of domain walls between insulating domains with opposite valley Chern numbers. We find that the network is semi-metallic with Dirac dispersion near the charge neutrality point and the corresponding electronic states distribute along the domain walls. Near the charge neutrality point, we find quantized conductance in nanoribbon with sawtooth domain wall edges that propagates along the boundaries and is robust against weak disorder. For a trident edged ribbon, we find a small energy gap due to the finite size effect making the nanoribbon an insulator. When the Fermi energy is away from charge neutrality point, all domain walls contribute to the conduction of current. Our results provide a comprehensive analysis of the electronic transport properties in a topological domain wall network that not only agrees qualitatively with experiments on marginally twisted bilayer graphene under a perpendicular electric field, but also can provide useful insights for designing low-power topological quantum devices.

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preprint2020arXiv

Valley-Current Splitter in Minimally Twisted Bilayer Graphene

We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting zero-lines, we find that (i) the incoming current can be partitioned into both left-right adjacent topological channels and that (ii) the forward-propagating current is nonzero. By tuning the Fermi energy from the charge-neutrality point to a band edge, the currents partitioned into the three outgoing channels become nearly equal. Moreover, we find that current partition node can be designed as a perfect valley filter and energy splitter controlled by electric gating. By changing the relative electric field magnitude, the intersection of three topological zero-lines can transform smoothly into a single zero line, and the current partition can be controlled precisely. We explore the available methods for modulating this device systematically by changing the Fermi energy, the energy gap size, and the size of central gapless region. The current partition is also influenced by magnetic fields and the system size. Our results provide a microscopic depiction of the electronic transport properties around a unit cell of minimally twisted bilayer graphene and have far-reaching implications in the design of electron-beam splitters and interferometer devices.

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preprint2019arXiv

Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride

Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single G/BN moire pattern depending on the relative stacking arrangements of the top/bottom BN layers. We show that strong interference effects are found in nearly aligned BN/G/BN and BN/G/NB and obtain the evolution of the associated density of states as a function of moire superlattice twist angles. For equal moire periods and commensurate patterns with $Δϕ= 0^{\circ}$ modulo $60^{\circ}$ angle differences the patterns can add up constructively leading to large pseudogaps of about $\sim 0.5$ eV on the hole side or cancel out destructively depending on their relative sliding, e.g. partially recovering electron-hole symmetry. The electronic structure of moire quasicrystals for $Δϕ=30^{\circ}$ differences reveal double moire features in the density of states with almost isolated van Hove singularities where we can expect strong correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Topological flat bands without magic angles in massive twisted bilayer graphenes

Twisted bilayer graphene (TBG) hosts nearly flat bands with narrow bandwidths of a few meV at certain {\em magic} twist angles. Here we show that in twisted gapped Dirac material bilayers, or massive twisted bilayer graphenes (MTBG), isolated nearly flat bands below a threshold bandwidth $W_c$ are expected for continuous small twist angles up to a critical $θ_c$ depending on the flatness of the original bands and the interlayer coupling strength. Narrow bandwidths of $W \lesssim $30 meV are expected for $θ\lesssim 3^{\circ} $ for twisted Dirac materials with intrinsic gaps of $\sim 2$ eV that finds realization in monolayers of gapped transition metal dichalcogenides (TMDC), silicon carbide (SiC) among others, and even narrower bandwidths in hexagonal boron nitride (BN) whose gaps are $\sim 5$ eV, while twisted graphene systems with smaller gaps of a few tens of meV, e.g. due to alignment with hexagonal boron nitride, show vestiges of the magic angles behavior in the bandwidth evolution. The phase diagram of finite valley Chern numbers of the isolated moire bands expands with increasing difference between the sublattice selective interlayer tunneling parameters. The valley contrasting circular dichroism for interband optical transitions is constructive near $0^{\circ}$ and destructive near $60^{\circ}$ alignments and can be tuned through electric field and gate driven polarization of the mini-valleys. Combining massive Dirac materials with various intrinsic gaps, Fermi velocities, interlayer tunneling strengths suggests optimistic prospects of increasing $θ_c$ and achieving correlated states with large $U/W$ effective interaction versus bandwidth ratios.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist

Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the emergence of these ordered phases in the transport measurements. Tunneling spectroscopy and electronic compressibility measurements in tBLG have revealed a van Hove singularity that is consistent with the presence of the flat miniband. However, a direct observation of the flat dispersion in the momentum-space of such moire miniband in tBLG is still elusive. Here, we report the visualization of the flat moire miniband by using angle-resolved photoemission spectroscopy with nanoscale resolution (nanoARPES). The high spatial resolution in nanoARPES enabled the measurement of the local electronic structure of the tBLG. We clearly demonstrate the existence of the flat moire band near the charge neutrality for tBLG close to the magic angle at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Carrier and strain tunable intrinsic magnetism in two-dimensional MAX$_3$ transition metal chalcogenides

We present a density functional theory study of the carrier-density and strain dependence of magnetic order in two-dimensional (2D) MAX$_3$ (M= V, Cr, Mn, Fe, Co, Ni; A= Si, Ge, Sn, and X= S, Se, Te) transition metal trichalcogenides. Our {\em ab initio} calculations show that this class of compounds includes wide and narrow gap semiconductors and metals and half-metals, and that most of these compounds are magnetic. Although antiferromagnetic order is most common, ferromagnetism is predicted in MSiSe$_3$ for M= Mn, Ni, in MSiTe$_3$ for M= V, Ni, in MnGeSe$_3$, in MGeTe$_3$ for M=Cr, Mn, Ni, in FeSnS$_3$, and in MSnTe$_3$ for M= V, Mn, Fe. Among these compounds CrGeTe$_3$ and VSnTe$_3$ are ferromagnetic semiconductors. Our calculations suggest that the competition between antiferromagnetic and ferromagnetic order can be substantially altered by strain engineering, and in the semiconductor case also by gating. The associated critical temperatures can be substantially enhanced by means of carrier doping and strains.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride

In fractionally filled Landau levels there is only a small energy difference between broken translational symmetry electron-crystal states and exotic correlated quantum fluid states. We show that the spatially periodic substrate interaction associated with the long period moiré patterns present in graphene on nearly aligned hexagonal boron nitride (hBN) tilts this close competition in favor of the former, explaining surprising recent experimental findings.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Zero-line modes at stacking faulted domain walls in multilayer graphene

Rhombohedral multilayer graphene is a physical realization of the chiral two-dimensional electron gas that can host zero-line modes (ZLMs), also known as kink states, when the local ap opened by inversion symmetry breaking potential changes sign in real space. Here we study how the variations in the local stacking coordination of multilayer graphene affects the formation of the ZLMs. Our analysis indicates that the valley Hall effect develops whenever an interlayer potential difference is able to open up a band gap in stacking faulted multilayer graphene, and that ZLMs can appear at the domain walls separating two distinct regions with imperfect rhombohedral stacking configurations. Based on a tight-binding formulation with distant hopping terms between carbon atoms, we first show that topologically distinct domains characterized by the valley Chern number are separated by a metallic region connecting AA and AA$'$ stacking line in the layer translation vector space. We find that gapless states appear at the interface between the two stacking faulted domains with different layer translation or with opposite perpendicular electric field if their valley Chern numbers are different.

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preprint2015arXiv

Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene

Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically-smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moiré patterns and moiré super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data is explained by a theory of moiré bands that incorporates ab initio calculations and confirms the strongly non-perturbative character of tBLG interlayer coupling in the small twist-angle regime.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetic Oscillation of Optical Phonon in ABA- and ABC-Stacked Trilayer Graphene

We present a comparative measurement of the G-peak oscillations of phonon frequency, Raman intensity and linewidth in the Magneto-Raman scattering of optical E2g phonons in mechanically exfoliated ABA- and ABC-stacked trilayer graphene (TLG). Whereas in ABA-stacked TLG, we observe magnetophonon oscillations consistent with single-bilayer chiral band doublets, the features are flat for ABC-stacked TLG up to magnetic fields of 9 T. This suppression can be attributed to the enhancement of band chirality that compactifies the spectrum of Landau levels and modifies the magnetophonon resonance properties. The drastically different coupling behaviour between the electronic excitations and the E2g phonons in ABA- and ABC-stacked TLG reflects their different electronic band structures and the electronic Landau level transitions and thus can be another way to determine the stacking orders and to probe the stacking-order-dependent electronic structures. In addition, the sensitivity of the magneto-Raman scattering to the particular stacking order in few layers graphene highlights the important role of interlayer coupling in modifying the optical response properties in van der Waals layered materials.

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preprint2015arXiv

Persistent Current States in Bilayer Graphene

We argue that at finite carrier density and large displacement fields, bilayer graphene is prone to $\ell =0$ and $\ell = 1$ Pomeranchuk Fermi surface instabilities. The broken symmetries are driven by non-local exchange interactions which favor momentum space condensation. We find that electron-electron interactions lead first to spontaneous valley polarization, which breaks time-reversal invariance and is associated with spontaneous orbital magnetism, and then under some circumstances to a nematic phase with reduced rotational symmetry. When present, nematic order is signaled by reduced symmetry in the dependence of optical absorption on light polarization.

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preprint2015arXiv

Single-Valley Engineering in Graphene Superlattices

The two inequivalent valleys in graphene preclude the protection against inter-valley scattering offered by an odd-number of Dirac cones characteristic of Z2 topological insulator phases. Here we propose a way to engineer a chiral single-valley metallic phase with quadratic crossover in a honeycomb lattice through tailored \sqrt{3}N *\sqrt{3}N or 3N *3N superlattices. The possibility of tuning valley-polarization via pseudo-Zeeman field and the emergence of Dresselhaus-type valley-orbit coupling are proposed in adatom decorated graphene superlattices. Such valley manipulation mechanisms and metallic phase can also find applications in honeycomb photonic crystals.

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preprint2015arXiv

The role of geometry and topological defects in the 1D zero-line modes of graphene

Breaking inversion symmetry in chiral graphene systems, \textit{e.g.}, by applying a perpendicular electric field in chirally-stacked rhombohedral multilayer graphene or by introducing staggered sublattice potentials in monolayer graphene, opens up a bulk band gap that harbors a quantum valley-Hall state. When the gap size is allowed to vary and changes sign in space, a topologically-confined one-dimensional (1D) zero-line mode (ZLM) is formed along the zero lines of the local gap. Here we show that gapless ZLM with distinguishable valley degrees of freedom K and K$'$ exist for every propagation angle except for the armchair direction that exactly superpose the valleys. We further analyze the role of different geometries of top-bottom gated device setups that can be realized in experiments, discuss the effects of their edge misalignment, and analyze three common forms of topological defects that could influence the 1D ZLM transport properties in actual devices.

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preprint2015arXiv

THz conductivity of graphene on boron nitride

The conductivity of graphene on a boron nitride substrate exhibits features in the terahertz (THz) and infrared (IR) frequency regimes that are associated with the periodic moiré pattern formed by the weakly coupled two-dimensional materials. The THz and IR features are strongest when the two honeycomb lattices are orientationally aligned, and in this case are Pauli blocked unless the Fermi level is close to $\pm 150$ meV relative to the graphene sheet Dirac point. Because the transition energies between moiré bands formed above the Dirac point are small, ac conductivity features in n-doped graphene tend to be overwhelmed by the Drude peak. The substrate-induced band splitting is larger at energies below the Dirac point, however, and can however lead to sharp features at THz and IR frequencies in p-doped graphene. In this Letter we focus on the strongest few THz and IR features, explaining how they arise from critical points in the moiré-band joint density-of-states, and commenting on the interval of Fermi energy over which they are active.

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preprint2015arXiv

Transport and particle-hole asymmetry in graphene on boron nitride

All local electronic properties of graphene on a hexagonal boron nitride (hBN) substrate exhibit spatial moiré patterns related to lattice constant and orientation differences between shared triangular Bravais lattices. We apply a previously derived effective Hamiltonian for the $π$-bands of graphene on h-BN to address the carrier-dependence of transport properties, concentrating on the conductivity features at four electrons and four holes per unit cell. These transport features measure the strength of Bragg scattering of $π$-electrons off the moiré pattern, and exhibit a striking particle-hole asymmetry that we trace to specific features of the effective Hamiltonian that we interpret physically.

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preprint2014arXiv

Origin of band gaps in graphene on hexagonal boron nitride

Recent progress in preparing well controlled 2D van der Waals heterojunctions has opened up a new frontier in materials physics. In this paper we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are produced by an interesting interplay between structural and electronic properties, including electronic many-body exchange interactions. Our theory is able to explain the observed gap behavior by accounting first for the structural relaxation of graphene's carbon atoms when placed on a boron nitride substrate and then for the influence of the substrate on low-energy $π$-electrons located at relaxed carbon atom sites. The methods we employ can be applied to many other van der Waals heterojunctions.

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preprint2013arXiv

Ab-Initio Theory of Moiré Superlattice Bands in Layered Two-Dimensional Materials

When atomically thin two-dimensional (2D) materials are layered they often form incommensurate non-crystalline structures that exhibit long-period moir{\' e} patterns when examined by scanning probes. In this paper we present an approach which uses information obtained from {\it ab initio} calculations performed on short-period crystalline structures to derive effective Hamiltonians that are able to efficiently describe the influence of the moir{\' e} pattern superlattices on electronic properties. We apply our approach to the cases of graphene on graphene (G/G) and graphene on hexagonal boron nitride (G/BN), deriving explicit effective Hamiltonians that have the periodicity of the moir{\' e} pattern and can be used to calculate electronic properties of interest for arbitrary twist angles and lattice constants.

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preprint2013arXiv

Accurate tight-binding and continuum models for the $π$ bands of bilayer graphene

We derive an {\em ab initio} $π$-band tight-binding model for $AB$ stacked bilayer graphene based on maximally localized Wannier wave functions (MLWFs) centered on the carbon sites, finding that both intralayer and interlayer hopping is longer in range than assumed in commonly used phenomenological tight-binding models. Starting from this full tight-binding model, we derive two effective models that are intended to provide a convenient starting point for theories of $π$-band electronic properties by achieving accuracy over the full width of the $π$-bands, and especially at the Dirac points, in models with a relatively small number of hopping parameters. The simplified models are then compared with phenomenological Slonczewski-Weiss-McClure type tight-binding models in an effort to clarify confusions that exists in the literature concerning tight-binding model parameter signs.

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preprint2013arXiv

Current partition at topological zero-line intersections

An intersection between one-dimensional chiral acts as a topological current splitter. We find that the splitting of a chiral zero-line mode obeys very simple, yet highly counterintuitive, partition laws which relate current paths to the geometry of the intersection. Our results have far reaching implications for device proposals based on chiral zero-line transport in the design of electron beam splitters and interferometers, and for understanding transport properties in systems where multiple topological domains lead to a statistical network of chiral channels.

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preprint2012arXiv

Gapped broken symmetry states in ABC trilayer graphene

We use a self-consistent Hartree-Fock approximation with realistic Coulomb interactions for $π$-band electrons to explore the possibility of broken symmetry states in weakly disordered ABC stacked trilayer graphene. The competition between gapped and gapless broken symmetry states, and normal states is studied by comparing total energies. We find that gapped states are favored and that, unlike the bilayer case, gapless nematic broken symmetry states are not metastable. Among the gapped states the layer antiferromagnetic state is favored over anomalous and spin Hall states.

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preprint2012arXiv

Pseudospin Order in Monolayer, Bilayer, and Double-Layer Graphene

Graphene is a gapless semiconductor in which conduction and valence band wavefunctions differ only in the phase difference between their projections onto the two sublattices of the material's two-dimensional honeycomb crystal structure. We explain why this circumstance creates openings for broken symmetry states, including antiferromagnetic states in monolayer and bilayer graphene and exciton condensates in double-layer graphene, that are momentum space analogs of the real-space order common in systems with strong local interactions. We discuss some similarities among, and some differences between, these three broken symmetry states.

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preprint2012arXiv

Transport Properties of Graphene Nanoroads in Boron-Nitride Sheets

We demonstrate that the one-dimensional (1D) transport channels that appear in the gap when graphene nanoroads are embedded in boron-nitride (BN) sheets are more robust when they are inserted at AB/BA grain boundaries. Our conclusions are based on ab-initio electronic structure calculations for a variety of different crystal orientations and bonding arrangements at the BN/C interfaces. This property is related to the valley-Hall conductivity present in the BN band structure and to the topologically protected kink states that appear in continuum Dirac models with position dependent masses.

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preprint2012arXiv

Unbalanced edge modes and topological phase transition in gated trilayer graphene

Gapless edge modes hosted by chirally-stacked trilayer graphene display unique features when a bulk gap is opened by applying an interlayer potential difference. We show that trilayer graphene with half-integer valley Hall conductivity leads to unbalanced edge modes at opposite zigzag boundaries, resulting in a natural valley current polarizer. This unusual characteristic is preserved in the presence of Rashba spin-orbit coupling that turns a gated trilayer graphene into a ${Z}_2$ topological insulator with an odd number of helical edge mode pairs.

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preprint2011arXiv

Electronic Highways in Bilayer Graphene

Bilayer graphene with an interlayer potential difference has an energy gap and, when the potential difference varies spatially, topologically protected one-dimensional states localized along the difference's zero-lines. When disorder is absent, electronic travel directions along zero-line trajectories are fixed by valley Hall properties. Using the Landauer-Büttiker formula and the non-equilibrium Green's function technique we demonstrate numerically that collisions between electrons traveling in opposite directions, due to either disorder or changes in path direction, are strongly suppressed. We find that extremely long mean free paths of the order of hundreds of microns can be expected in relatively clean samples. This finding suggests the possibility of designing low power nanoscale electronic devices in which transport paths are controlled by gates which alter the inter-layer potential landscape.

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preprint2011arXiv

Enhancement of non-local exchange near isolated band-crossings in graphene

The physics of non-local exchange interactions in graphene sheets is studied within a $π$-orbital tight-binding model using a Hartree-Fock approximation and Coulomb interactions modified at short distances by lattice effects and at large distances by dielectric screening. We use this study to comment on the strong non-locality of exchange effects in systems with isolated band-crossings at energies close to the Fermi energy. We also discuss the role of lattice scale details of the effective Coulomb interaction in determining whether or not broken symmetry states appear at strong interaction strengths, and in determining the character of those states when they do appear.

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preprint2011arXiv

Non-local exchange effects in zigzag edge magnetism of neutral graphene nanoribbons

We study the role of non-locality of exchange in a neutral zigzag graphene nanoribbon within the $π$-orbital unrestricted Hartree-Fock approximation. Within this theory we find that the magnetic features are further stabilized for both the intra-edge and inter-edge exchange compared to mean field theories of zigzag ribbon based on local exchange (like the Hubbard model or the ab-initio Local Density Approximation). The inter-edge exchange produces an enhancement of the band-gap of the magnetic ground-state solutions. The effect of this enhanced exchange on the edge states can not be satisfactorily achieved by a local interaction with renormalized parameters.

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preprint2011arXiv

Valley-Hall Kink and Edge States in Multilayer Graphene

We report on a theoretical study of one-dimensional (1D) states localized at few-layer graphene system ribbon edges, and at interfaces between few-layer graphene systems with different valley Hall conductivities. These 1D states are topologically protected when valley mixing is neglected. We address the influence on their properties of stacking arrangement, interface structure, and external electric field perpendicular to the layers. We find that 1D states are generally absent at multilayer ribbon armchair direction edges, but present irrespective of crystallographic orientation at any internal valley-Hall interface of an ABC stacked multilayer.

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preprint2010arXiv

Lattice Theory of Pseudospin Ferromagnetism in Bilayer Graphene: Competing Orders and Interaction Induced Quantum Hall States

In mean-field-theory bilayer graphene's massive Dirac fermion model has a family of broken inversion symmetry ground states with charge gaps and flavor dependent spontaneous inter layer charge transfers. We use a lattice Hartree-Fock model to explore some of the physics which controls whether or not this type of broken symmetry state, which can be viewed as a pseudospin ferromagnet, occurs in nature. We find that inversion symmetry is still broken in the lattice model and estimate that transferred areal densities are $\sim 10^{-5}$ electrons per carbon atom, that the associated energy gaps are $\sim 10^{-2} {\rm eV}$, that the ordering condensation energies are $\sim 10^{-7} eV$ per carbon atom, and that the energy differences between competing orders at the neutrality point are $\sim 10^{-9} eV$ per carbon atom. We explore the quantum phase transitions induced by external magnetic fields and by externally controlled electric potential differences between the layers. We find, in particular, that in an external magnetic field coupling to spontaneous orbital moments favors broken time-reversal-symmetry states that have spontaneous quantized anomalous Hall effects. Our theory predicts a non monotonic behavior of the band gap at neutrality as a function of interlayer potential difference in qualitative agreement with recent experiments.

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preprint2010arXiv

Spontaneous Quantum Hall States in Chirally-stacked Few-Layer Graphene Systems

Chirally stacked N-layer graphene systems with N >= 2 exhibit a variety of distinct broken symmetry states in which charge density contributions from different spins and valleys are spontaneously transferred between layers. We explain how these states are distinguished by their charge, spin, and valley Hall conductivities, by their orbital magnetizations, and by their edge state properties. We argue that valley Hall states have [N/2] edge channels per spin-valley.

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