BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Jeil Jung

Jeil Jung contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-el

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
13works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

13 published item(s)

preprint2023arXiv

Commensuration torques and lubricity in double moire systems

We study the commensuration torques and layer sliding energetics of alternating twist trilayer graphene (t3G) and twisted bilayer graphene on hexagonal boron nitride (t2G/BN) that have two superposed moire interfaces. Lattice relaxations for typical graphene twist angles of $\sim 1^{\circ}$ in t3G or t2G/BN are found to break the out-of-plane layer mirror symmetry, give rise to layer rotation energy local minima dips of the order of $\sim 10^{-1}$ meV/atom at double moire alignment angles, and have sliding energy landscape minima between top-bottom layers of comparable magnitude. Moire superlubricity is restored for twist angles as small as $\sim 0.03^\circ$ away from alignment resulting in suppression of sliding energies by several orders of magnitude of typically $\sim 10^{-4}$ meV/atom, hence indicating the precedence of rotation over sliding in the double moire commensuration process.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electronic structure of lattice relaxed alternating twist tNG-multilayer graphene: from few layers to bulk AT-graphite

We calculate the electronic structure of AA'AA'...-stacked alternating twist N-layer (tNG) graphene for N = 3, 4, 5, 6, 8, 10, 20 layers and bulk alternating twist (AT) graphite systems where the lattice relaxations are modeled by means of molecular dynamics simulations. We show that the symmetric AA'AA'... stacking is energetically preferred among all interlayer sliding geometries for progressively added layers up to N=6. Lattice relaxations enhance electron-hole asymmetry, and reduce the magic angles with respect to calculations with fixed tunneling strengths that we quantify from few layers to bulk AT-graphite. Without a perpendicular electric field, the largest magic angle flat-band states locate around the middle following the largest eigenvalue eigenstate in a 1D-chain model of layers, while the density redistributes to outer layers for smaller magic twist angles corresponding to higher order effective bilayers in the 1D chain. A perpendicular electric field decouples the electronic structure into $N$ Dirac bands with renormalized Fermi velocities with distinct even-odd band splitting behaviors, showing a gap for N=4 while for odd layers a Dirac cone remains between the flat band gaps. The magic angle error tolerance estimated from density of states maxima expand progressively from $0.05^{\circ}$ in t2G to up to $0.2^{\circ}$ in AT-graphite, hence allowing a greater flexibility in multilayers. Decoupling of tNG into t2G with different interlayer tunneling proportional to the eigenvalues of a 1D layers chain allows to map tNG-multilayers bands onto those of periodic bulk AT-graphite's at different $k_z$ values. We also obtain the Landau level density of states in the quantum Hall regime for magnetic fields of up to 50~T and confirm the presence of nearly flat bands around which we can develop suppressed density of states gap regions by applying an electric field in N > 3 systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nearly flat bands in twisted triple bilayer graphene

We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling $ω$, twist angle $θ$, interlayer potential difference $Δ$, and top-bottom bilayers sliding vector $\boldsymbolτ$ for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and gap-opening through a finite interlayer potential difference $Δ$ allows the flattening of bands in t3BG down to $\sim 20$~meV for twist angles $θ\lesssim 2^{\circ}$ regardless of the stacking types. The easier isolation of the flat bands and associated reduction of Coulomb screening thanks to the intrinsic gaps of bilayer graphene for finite $Δ$ facilitate the formation of correlation-driven gaps when it is compared to the metallic phases of twisted trilayer graphene under electric fields. We obtain the stacking dependent Coulomb energy versus bandwidth $U/W \gtrsim 1$ ratios in the $θ$ and $Δ$ parameter space. We also present the expected $K$-valley Chern numbers for the lowest-energy nearly flat bands.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Relaxation Effects in Twisted Bilayer Graphene: a Multi-Scale Approach

We present a multi-scale density functional theory (DFT) informed molecular dynamics and tight-binding (TB) approach to capture the interdependent atomic and electronic structures of twisted bilayer graphene. We calibrate the flat band magic angle to be at $θ_{\rm M} = 1.08^{\circ}$ by rescaling the interlayer tunneling for different atomic structure relaxation models as a way to resolve the indeterminacy of existing atomic and electronic structure models whose predicted magic angles vary widely between $0.9^\circ \sim 1.3^\circ$. The interatomic force fields are built using input from various stacking and interlayer distance dependent DFT total energies including the exact exchange and random phase approximation (EXX+RPA). We use a Fermi velocity of $\upsilon_{\rm F} \simeq 10^{6}$~m/s for graphene that is enhanced by about $\sim 15\%$ over the local density approximation (LDA) values. Based on this atomic and electronic structure model we obtain high-resolution spectral functions comparable with experimental angle-resolved photoemission spectra (ARPES). Our analysis of the interdependence between the atomic and electronic structures indicates that the intralayer elastic parameters compatible with the DFT-LDA, which are stiffer by $\sim$30\% than widely used reactive empirical bond order force fields, can combine with EXX+RPA interlayer potentials to yield the magic angle at $\sim 1.08^{\circ}$ without further rescaling of the interlayer tunneling.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Emergence of broken-symmetry states at half-integer band fillings in twisted bilayer graphene

The dominance of Coulomb interactions over kinetic energy of electrons in narrow, non-trivial moiré bands of magic-angle twisted bilayer graphene (TBG) gives rise to a variety of correlated phases such as correlated insulators, superconductivity, orbital ferromagnetism, Chern insulators and nematicity. Most of these phases occur at or near an integer number of carriers per moiré unit cell. Experimental demonstration of ordered states at fractional moiré band-fillings at zero applied magnetic field $B$, is a challenging pursuit. In this letter, we report the observation of states near half-integer band-fillings of $ν\approx 0.5$ and $\pm3.5$ at $B\approx 0$ in TBG proximitized by tungsten diselenide (WSe$_2$) through magnetotransport and thermoelectricity measurements. A series of Lifshitz transitions due to the changes in the topology of the Fermi surface implies the evolution of van Hove singularities (VHSs) of the diverging density of states (DOS) at a discrete set of partial fillings of flat bands. Furthermore, at a band filling of $ν\approx-0.5$, a symmetry-broken Chern insulator emerges at high $B$, compatible with the band structure calculations within a translational symmetry-broken supercell with twice the area of the original TBG moiré cell. Our results are consistent with a spin/charge density wave ground state in TBG in the zero $B$-field limit.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron-hole asymmetry and band gaps of commensurate double moire patterns in twisted bilayer graphene on hexagonal boron nitride

Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here we show that tBG/BN commensurate double moire patterns can be classified into two types, each favoring the narrowing of either the conduction or valence bands on average, and obtain the evolution of the bands as a function of the interlayer sliding vectors and electric fields. Finite valley Chern numbers $\pm 1$ are found in a wide range of parameter space when the moire bands are isolated through gaps, while the local density of states associated to the flat bands are weakly affected by the BN substrate invariably concentrating around the AA-stacked regions of tBG. We illustrate the impact of the BN substrate for a particularly pronounced electron-hole asymmetric band structure by calculating the optical conductivities of twisted bilayer graphene near the magic angle as a function of carrier density. The band structures corresponding to other $N$-multiple commensurate moire period ratios indicate it is possible to achieve narrow width $W \lesssim 30$ meV isolated folded band bundles for tBG angles $θ\lesssim 1^{\circ}$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate tunable topological flat bands in twisted monolayer-bilayer graphene

We investigate the band structure of twisted monolayer-bilayer graphene (tMBG), or twisted graphene on bilayer graphene (tGBG), as a function of twist angles and perpendicular electric fields in search of optimum conditions for achieving isolated nearly flat bands. Narrow bandwidths comparable or smaller than the effective Coulomb energies satisfying $U_{\textrm{eff}} /W \gtrsim 1$ are expected for twist angles in the range of $0.3^{\circ} \sim 1.5^{\circ}$, more specifically in islands around $θ\sim 0.5^{\circ}, \, 0.85^{\circ}, \,1.3^{\circ}$ for appropriate perpendicular electric field magnitudes and directions. The valley Chern numbers of the electron-hole asymmetric bands depend intrinsically on the details of the hopping terms in the bilayer graphene, and extrinsically on factors like electric fields or average staggered potentials in the graphene layer aligned with the contacting hexagonal boron nitride substrate. This tunability of the band isolation, bandwidth, and valley Chern numbers makes of tMBG a more versatile system than twisted bilayer graphene for finding nearly flat bands prone to strong correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Metallic Network of Topological Domain Walls

We study the electronic and transport properties of a network of domain walls between insulating domains with opposite valley Chern numbers. We find that the network is semi-metallic with Dirac dispersion near the charge neutrality point and the corresponding electronic states distribute along the domain walls. Near the charge neutrality point, we find quantized conductance in nanoribbon with sawtooth domain wall edges that propagates along the boundaries and is robust against weak disorder. For a trident edged ribbon, we find a small energy gap due to the finite size effect making the nanoribbon an insulator. When the Fermi energy is away from charge neutrality point, all domain walls contribute to the conduction of current. Our results provide a comprehensive analysis of the electronic transport properties in a topological domain wall network that not only agrees qualitatively with experiments on marginally twisted bilayer graphene under a perpendicular electric field, but also can provide useful insights for designing low-power topological quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley-Current Splitter in Minimally Twisted Bilayer Graphene

We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting zero-lines, we find that (i) the incoming current can be partitioned into both left-right adjacent topological channels and that (ii) the forward-propagating current is nonzero. By tuning the Fermi energy from the charge-neutrality point to a band edge, the currents partitioned into the three outgoing channels become nearly equal. Moreover, we find that current partition node can be designed as a perfect valley filter and energy splitter controlled by electric gating. By changing the relative electric field magnitude, the intersection of three topological zero-lines can transform smoothly into a single zero line, and the current partition can be controlled precisely. We explore the available methods for modulating this device systematically by changing the Fermi energy, the energy gap size, and the size of central gapless region. The current partition is also influenced by magnetic fields and the system size. Our results provide a microscopic depiction of the electronic transport properties around a unit cell of minimally twisted bilayer graphene and have far-reaching implications in the design of electron-beam splitters and interferometer devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride

Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single G/BN moire pattern depending on the relative stacking arrangements of the top/bottom BN layers. We show that strong interference effects are found in nearly aligned BN/G/BN and BN/G/NB and obtain the evolution of the associated density of states as a function of moire superlattice twist angles. For equal moire periods and commensurate patterns with $Δϕ= 0^{\circ}$ modulo $60^{\circ}$ angle differences the patterns can add up constructively leading to large pseudogaps of about $\sim 0.5$ eV on the hole side or cancel out destructively depending on their relative sliding, e.g. partially recovering electron-hole symmetry. The electronic structure of moire quasicrystals for $Δϕ=30^{\circ}$ differences reveal double moire features in the density of states with almost isolated van Hove singularities where we can expect strong correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Topological flat bands without magic angles in massive twisted bilayer graphenes

Twisted bilayer graphene (TBG) hosts nearly flat bands with narrow bandwidths of a few meV at certain {\em magic} twist angles. Here we show that in twisted gapped Dirac material bilayers, or massive twisted bilayer graphenes (MTBG), isolated nearly flat bands below a threshold bandwidth $W_c$ are expected for continuous small twist angles up to a critical $θ_c$ depending on the flatness of the original bands and the interlayer coupling strength. Narrow bandwidths of $W \lesssim $30 meV are expected for $θ\lesssim 3^{\circ} $ for twisted Dirac materials with intrinsic gaps of $\sim 2$ eV that finds realization in monolayers of gapped transition metal dichalcogenides (TMDC), silicon carbide (SiC) among others, and even narrower bandwidths in hexagonal boron nitride (BN) whose gaps are $\sim 5$ eV, while twisted graphene systems with smaller gaps of a few tens of meV, e.g. due to alignment with hexagonal boron nitride, show vestiges of the magic angles behavior in the bandwidth evolution. The phase diagram of finite valley Chern numbers of the isolated moire bands expands with increasing difference between the sublattice selective interlayer tunneling parameters. The valley contrasting circular dichroism for interband optical transitions is constructive near $0^{\circ}$ and destructive near $60^{\circ}$ alignments and can be tuned through electric field and gate driven polarization of the mini-valleys. Combining massive Dirac materials with various intrinsic gaps, Fermi velocities, interlayer tunneling strengths suggests optimistic prospects of increasing $θ_c$ and achieving correlated states with large $U/W$ effective interaction versus bandwidth ratios.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist

Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the emergence of these ordered phases in the transport measurements. Tunneling spectroscopy and electronic compressibility measurements in tBLG have revealed a van Hove singularity that is consistent with the presence of the flat miniband. However, a direct observation of the flat dispersion in the momentum-space of such moire miniband in tBLG is still elusive. Here, we report the visualization of the flat moire miniband by using angle-resolved photoemission spectroscopy with nanoscale resolution (nanoARPES). The high spatial resolution in nanoARPES enabled the measurement of the local electronic structure of the tBLG. We clearly demonstrate the existence of the flat moire band near the charge neutrality for tBLG close to the magic angle at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Carrier and strain tunable intrinsic magnetism in two-dimensional MAX$_3$ transition metal chalcogenides

We present a density functional theory study of the carrier-density and strain dependence of magnetic order in two-dimensional (2D) MAX$_3$ (M= V, Cr, Mn, Fe, Co, Ni; A= Si, Ge, Sn, and X= S, Se, Te) transition metal trichalcogenides. Our {\em ab initio} calculations show that this class of compounds includes wide and narrow gap semiconductors and metals and half-metals, and that most of these compounds are magnetic. Although antiferromagnetic order is most common, ferromagnetism is predicted in MSiSe$_3$ for M= Mn, Ni, in MSiTe$_3$ for M= V, Ni, in MnGeSe$_3$, in MGeTe$_3$ for M=Cr, Mn, Ni, in FeSnS$_3$, and in MSnTe$_3$ for M= V, Mn, Fe. Among these compounds CrGeTe$_3$ and VSnTe$_3$ are ferromagnetic semiconductors. Our calculations suggest that the competition between antiferromagnetic and ferromagnetic order can be substantially altered by strain engineering, and in the semiconductor case also by gating. The associated critical temperatures can be substantially enhanced by means of carrier doping and strains.

0 citations0 reviewsNo code linkedOpen access