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Researcher profile

Jean-François Colomer

Jean-François Colomer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciBiological Physicscond-mat.mes-hallphysics.optics

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Published work

5 published item(s)

preprint2016arXiv

Oxidation-assisted graphene heteroepitaxy on copper foil

We propose an innovative, easy-to-implement approach to synthesize large-area singlecrystalline graphene sheets by chemical vapor deposition on copper foil. This method doubly takes advantage of residual oxygen present in the gas phase. First, by slightly oxidizing the copper surface, we induce grain boundary pinning in copper and, in consequence, the freezing of the thermal recrystallization process. Subsequent reduction of copper under hydrogen suddenly unlocks the delayed reconstruction, favoring the growth of centimeter-sized copper (111) grains through the mechanism of abnormal grain growth. Second, the oxidation of the copper surface also drastically reduces the nucleation density of graphene. This oxidation/reduction sequence leads to the synthesis of aligned millimeter-sized monolayer graphene domains in epitaxial registry with copper (111). The as-grown graphene flakes are demonstrated to be both single-crystalline and of high quality.

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preprint2015arXiv

Probing graphene χ(2) using a gold photon sieve

Nonlinear second harmonic optical activity of graphene covering a gold photon sieve was determined for different polarizations. The photon sieve consists of a subwavelength gold nanohole array placed on glass. It combines the benefits of efficient light trapping and surface plasmon propagation in order to unravel different elements of graphene second-order susceptibility χ(2). Those elements efficiently contribute to second harmonic generation. In fact, the graphene- coated photon sieve produces a second harmonic intensity at least two orders of magnitude higher compared with a bare, flat gold layer and an order of magnitude coming from the plasmonic effect of the photon sieve; the remaining enhancement arises from the graphene layer itself. The measured second harmonic generation yield, supplemented by semianalytical computations, provides an original method to constrain the graphene χ(2) elements. The values obtained are |d_{31} + d_{33}| < 8.1 x 10^3 pm^2/V and |d_{15}| < 1.4 x 10^6 pm^2/V for a second harmonic signal at 780 nm. This original method can be applied to any kind of 2D materials covering such a plasmonic structure.

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preprint2014arXiv

Do CVD grown graphene films have antibacterial activity on metallic substrates?

Accurate assessment of the antibacterial activity of graphene requires consideration of both the graphene fabrication method and, for supported films, the properties of the substrate. Large-area graphene films produced by chemical vapor deposition were grown directly on copper substrates or transferred on a gold substrate and their effect on the viability and proliferation of the Gram-positive bacteria Staphylococcus aureus and the Gram-negative bacteria Escherichia coli were assessed. The viability and the proliferation of both bacterial species were not affected when they were grown on a graphene film entirely covering the gold substrate, indicating that conductivity plays no role on bacterial viability and graphene has no antibacterial activity against S. aureus and E. coli. On the other hand, antibacterial activity was observed when graphene coated the copper substrates, resulting from the release of bactericidal cupric ions in inverse proportion to the graphene surface coverage.

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preprint2014arXiv

Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bilayer graphene without inducing significant damage to the bottom graphene layer. Based on Raman spectra, we demonstrate that the bottom graphene layer has the salient features of single layer graphene. During the initial half-cycle PE-ALD, the upper graphene layer reacts with the metal precursor, forming uniform nucleation islands or an active metallic carbide layer. After monolayer dielectric coverage, the bottom graphene layer has additional protection. The upper graphene layer serves as a sacrificial layer, which not only promotes the adhesion of dielectric on graphene, but also protects the lattice symmetry of the bottom graphene layer. Our results indicate that bilayer graphene allows for controlling/limiting the degree of defect during the ALD of dielectrics and could be a good starting material for building filed effect transistors and sensing devices.

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preprint2013arXiv

The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition

The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hydrogen presence during graphene synthesis and cooling. In the absence of hydrogen during the growth step or cooling at slow rate, weak carbon coverage, consisting mostly of oxidized and amorphous carbon, is obtained on the copper catalyst. The oxidation originates from the inevitable occurrence of residual oxidizing impurities in the reactor&#39;s atmosphere. Graphene with appreciable coverage can be grown within the vacuum-free furnace only upon admitting hydrogen during the growth step. After formation, it is preserved from the destructive effect of residual oxidizing contaminants once exposure at high temperature is minimized by fast cooling or hydrogen flow. Under these conditions, micrometer-sized hexagon-shaped graphene domains of high structural quality are achieved.

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