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Benoît Hackens

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cond-mat.mtrl-sci cond-mat.mes-hall physics.atom-ph quant-ph

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preprint2026arXiv

Fast hydrogen atom diffraction through monocrystalline graphene

We report fast atom diffraction through single-layer graphene using hydrogen atoms at kinetic energies from 150 to 1200 eV. High-resolution images reveal overlapping hexagonal patterns from coexisting monocrystalline domains. Time-of-flight tagging confirms negligible energy loss, making the method suitable for matter-wave interferometry. The diffraction is well described by the eikonal approximation, with accurate modeling requiring the full 3D interaction potential from DFT. Simpler models fail to reproduce the data, highlighting the exceptional sensitivity of diffraction patterns to atom-surface interactions and their potential for spectroscopic applications.

preprint2016arXiv

Oxidation-assisted graphene heteroepitaxy on copper foil

We propose an innovative, easy-to-implement approach to synthesize large-area singlecrystalline graphene sheets by chemical vapor deposition on copper foil. This method doubly takes advantage of residual oxygen present in the gas phase. First, by slightly oxidizing the copper surface, we induce grain boundary pinning in copper and, in consequence, the freezing of the thermal recrystallization process. Subsequent reduction of copper under hydrogen suddenly unlocks the delayed reconstruction, favoring the growth of centimeter-sized copper (111) grains through the mechanism of abnormal grain growth. Second, the oxidation of the copper surface also drastically reduces the nucleation density of graphene. This oxidation/reduction sequence leads to the synthesis of aligned millimeter-sized monolayer graphene domains in epitaxial registry with copper (111). The as-grown graphene flakes are demonstrated to be both single-crystalline and of high quality.

preprint2013arXiv

The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition

The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hydrogen presence during graphene synthesis and cooling. In the absence of hydrogen during the growth step or cooling at slow rate, weak carbon coverage, consisting mostly of oxidized and amorphous carbon, is obtained on the copper catalyst. The oxidation originates from the inevitable occurrence of residual oxidizing impurities in the reactor's atmosphere. Graphene with appreciable coverage can be grown within the vacuum-free furnace only upon admitting hydrogen during the growth step. After formation, it is preserved from the destructive effect of residual oxidizing contaminants once exposure at high temperature is minimized by fast cooling or hydrogen flow. Under these conditions, micrometer-sized hexagon-shaped graphene domains of high structural quality are achieved.