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Researcher profile

Benoît Hackens

Benoît Hackens contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.atom-phquant-ph

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Published work

2 published item(s)

preprint2026arXiv

Fast hydrogen atom diffraction through monocrystalline graphene

We report fast atom diffraction through single-layer graphene using hydrogen atoms at kinetic energies from 150 to 1200 eV. High-resolution images reveal overlapping hexagonal patterns from coexisting monocrystalline domains. Time-of-flight tagging confirms negligible energy loss, making the method suitable for matter-wave interferometry. The diffraction is well described by the eikonal approximation, with accurate modeling requiring the full 3D interaction potential from DFT. Simpler models fail to reproduce the data, highlighting the exceptional sensitivity of diffraction patterns to atom-surface interactions and their potential for spectroscopic applications.

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preprint2013arXiv

The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition

The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hydrogen presence during graphene synthesis and cooling. In the absence of hydrogen during the growth step or cooling at slow rate, weak carbon coverage, consisting mostly of oxidized and amorphous carbon, is obtained on the copper catalyst. The oxidation originates from the inevitable occurrence of residual oxidizing impurities in the reactor's atmosphere. Graphene with appreciable coverage can be grown within the vacuum-free furnace only upon admitting hydrogen during the growth step. After formation, it is preserved from the destructive effect of residual oxidizing contaminants once exposure at high temperature is minimized by fast cooling or hydrogen flow. Under these conditions, micrometer-sized hexagon-shaped graphene domains of high structural quality are achieved.

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