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Xiaohui Tang

Xiaohui Tang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciquant-phEmerging Technologies

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Published work

10 published item(s)

preprint2016arXiv

Oxidation-assisted graphene heteroepitaxy on copper foil

We propose an innovative, easy-to-implement approach to synthesize large-area singlecrystalline graphene sheets by chemical vapor deposition on copper foil. This method doubly takes advantage of residual oxygen present in the gas phase. First, by slightly oxidizing the copper surface, we induce grain boundary pinning in copper and, in consequence, the freezing of the thermal recrystallization process. Subsequent reduction of copper under hydrogen suddenly unlocks the delayed reconstruction, favoring the growth of centimeter-sized copper (111) grains through the mechanism of abnormal grain growth. Second, the oxidation of the copper surface also drastically reduces the nucleation density of graphene. This oxidation/reduction sequence leads to the synthesis of aligned millimeter-sized monolayer graphene domains in epitaxial registry with copper (111). The as-grown graphene flakes are demonstrated to be both single-crystalline and of high quality.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bilayer graphene without inducing significant damage to the bottom graphene layer. Based on Raman spectra, we demonstrate that the bottom graphene layer has the salient features of single layer graphene. During the initial half-cycle PE-ALD, the upper graphene layer reacts with the metal precursor, forming uniform nucleation islands or an active metallic carbide layer. After monolayer dielectric coverage, the bottom graphene layer has additional protection. The upper graphene layer serves as a sacrificial layer, which not only promotes the adhesion of dielectric on graphene, but also protects the lattice symmetry of the bottom graphene layer. Our results indicate that bilayer graphene allows for controlling/limiting the degree of defect during the ALD of dielectrics and could be a good starting material for building filed effect transistors and sensing devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Self-Formation of Sub-10-nm Nanogaps by Silicidation for Resistive Switch in Air

We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation process. The nanogap width is deter- mined by the metal layer thickness. Our proposed method produces nanogaps either symmetric or asymmetric electrodes, as well as, multiple nanogaps within one unique process step for application to complex circuits. Therefore, this method provides high throughput and it is suitable for large-scale production. To demonstrate the feasibil- ity of the proposed fabrication method, nanogap resistive switches have been built and characterized. They exhibit a pronounced hysteresis with up to 103 on/off conductance ratios in air. Our results indicate that the voltages for initially electroforming the de- vice to the switch state are determinated by the nanogap sizes. However, the set and reset voltages of the device do not strongly dependent on the nanogap widths. These phenomena could be helpful to understand how the resistive switching is established.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Erbium Silicide Growth in the Presence of Residual Oxygen

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300°C, and annealed at 600°C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300°C and crystalline at 600°C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600°C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent non-equilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Process Optimization and Downscaling of a Single Electron Single Dot Memory

This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was to clarify the process conditions for the dot formation. Based on the process modeling, the influence of various parameters (oxidation temperature, nanowire shape) has been investigated. The necessity of a sharp compromise between these different parameters to ensure the presence of the memory dot has been established. In order to propose an aggressive memory cell, the downscaling of the device has been carefully studied. Scaling rules show that the size of the original device could be reduced by a factor of 2. This point has been previously confirmed by the realization of single-electron memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2-x/n-Si contacts with a low thermal budget.

0 citations0 reviewsNo code linkedOpen access