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Researcher profile

Jaume Gazquez

Jaume Gazquez contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

3 published item(s)

preprint2021arXiv

Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films

Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so far. Here, LSMO and other perovskite electrodes are compared. A small amount of orthorhombic phase and low polarization is found in HZO films grown on La-doped BaSnO3 and Nb-doped SrTiO3, while null amounts of orthorhombic phase and polarization are detected in films on LaNiO3 and SrRuO3. The critical effect of the electrode on the stabilized phases is not consequence of differences in the electrode lattice parameter. The interface is critical, and engineering the HZO bottom interface on just a few monolayers of LSMO permits the stabilization of the orthorhombic phase. Furthermore, while the specific divalent ion (Sr or Ca) in the manganite is not relevant, reducing the La content causes a severe reduction of the amount of orthorhombic phase and the ferroelectric polarization in the HZO film.

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preprint2020arXiv

Crystal Engineering and Ferroelectricity at the Nanoscale in Epitaxial 1D Manganese Oxide on Silicon

Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a result, the monolithic integration of these materials into silicon technology and its nanostructuration to develop alternative cost-effective processes are among the central points in current technology. In this work, we used a chemical route to obtain nanowire thin films of a novel Sr1+δMn8O16 (SMO) hollandite-type manganese oxide on silicon. Scanning transmission electron microscopy combined with crystallographic computing reveals a crystal structure comprising hollandite and pyrolusite units sharing the edges of their MnO6 octahedra, resulting in three types of tunnels arranged along the c axis, where ordering of the Sr atoms produces a natural symmetry breaking. The novel structure gives rise to a ferroelectricity and piezoelectricity, as revealed by local Direct Piezoelectric Force Microscopy measurements, which confirmed the ferroelectric nature of SMO nanowire thin films at room temperature and showed a piezoelectric coefficient d33 value of 22,6 pC/N. Moreover, we proved that flexible vertical SMO nanowires can be harvested and converted into electric output energy through the piezoelectric effect, showing an excellent deformability and high interface recombination. This work indicates the possibility of engineering the integration of 1D manganese oxides on silicon, a step which precedes the production of microelectronic devices.

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preprint2010arXiv

Conducting interfaces between band insulating oxides: the LaGaO3/SrTiO3

We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transition is found. The results open the route to widening the field of polar-non polar interfaces, pose some phenomenological constrains to their underlying physics and highlight the chance of tailoring their properties for future applications by adopting suitable polar materials.

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