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Source author record

Jannik C. Meyer

Jannik C. Meyer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.comp-phphysics.ins-det

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Published work

13 published item(s)

preprint2021arXiv

Aligned Stacking of Nanopatterned 2D materials -- Towards 3D printing at atomic resolution

Two-dimensional materials can be combined by placing individual layers on top of each other, so that they are bound only by their van der Waals interaction. The sequence of layers can be chosen arbitrarily, enabling an essentially atomic-level control of the material and thereby a wide choice of properties along one dimension. However, simultaneous control over the structure in the in-plane directions is so far still rather limited. Here, we combine spatially controlled modifications of 2D materials, using focused electron irradiation or electron beam induced etching, with the layer-by-layer assembly of van der Waals heterostructures. A novel assembly process makes it possible to structure each layer with an arbitrary pattern prior to the assembly into the heterostructure. Moreover, it enables a stacking of the layers with accurate lateral alignment, with an accuracy of currently 10nm, under observation in an electron microscope. Together, this enables the fabrication of almost arbitrary 3D structures with highest spatial resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride

Hexagonal boron nitride (h-BN) has long been recognized as an ideal substrate for electronic devices due to its dangling-bond-free surface, insulating nature and thermal/chemical stability. Therefore, to analyse the lattice structure and orientation of h-BN crystals becomes important. Here, the stacking order and wrinkles of h-BN are investigated by transmission electron microscopy (TEM). It is experimentally confirmed that the layers in the h-BN flakes are arranged in the AA' stacking. The wrinkles in a form of threefold network throughout the h-BN crystal are oriented along the armchair direction, and their formation mechanism was further explored by molecular dynamics simulations. Our findings provide a deep insight about the microstructure of h-BN and shed light on the structural design/electronic modulations of two-dimensional crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Resolving Few-Layer Antimonene/Graphene Heterostructures

Two-dimensional (2D) antimony (Sb, antimonene) recently attracted interest due to its peculiar electronic properties and its suitability as anode material in next generation batteries. Sb however exhibits a large polymorphic/allotropic structural diversity, which is also influenced by the Sb's support. Thus understanding Sb heterostructure formation is key in 2D Sb integration. Particularly 2D Sb/graphene interfaces are of prime importance as contacts in electronics and electrodes in batteries. We thus study here few-layered 2D Sb/graphene heterostructures by atomic-resolution (scanning) transmission electron microscopy. We find the co-existence of two Sb morphologies: First is a 2D growth morphology of layered beta-Sb with beta-Sb(001)||graphene(001) texture. Second are one-dimensional (1D) Sb nanowires which can be matched to beta-Sb with beta-Sb[2-21] perpendicular to graphene(001) texture and are structurally also closely related to thermodynamically non-preferred cubic Sb(001)||graphene(001). Importantly, both Sb morphologies show rotational van-der-Waals epitaxy with the graphene support. Both Sb morphologies are well resilient against environmental bulk oxidation, although superficial Sb-oxide layer formation merits consideration, including formation of novel epitaxial Sb2O3(111)/beta-Sb(001) heterostructures. Exact Sb growth behavior is sensitive on employed processing and substrate properties including, notably, the nature of the support underneath the direct graphene support. This introduces the substrate underneath a direct 2D support as a key parameter in 2D Sb heterostructure formation. Our work provides insights into the rich phase and epitaxy landscape in 2D Sb and 2D Sb/graphene heterostructures.

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preprint2016arXiv

Doping of metal-organic frameworks towards resistive sensing

Coordination polymerization leads to various metal-organic frameworks (MOFs) in which symmetrical metal nodes exposed to nano voids lead to unique physical properties and chemical functionalities. One of the challenges towards their applications as porous materials is to make MOFs optimally conductive to be used as electronic components. Here, we demonstrate that Co-MOF-74, a honeycomb nano{framework with one{dimensionally arranged cobalt atoms advances its physical properties by accommodating Tetracyanochinodimethan (TCNQ), an acceptor molecule. Strong intermolecular charge transfer narrows the optical band gap down to 1.5 eV of divalent TCNQ and enhances the electrical conduction, which allows the MOF to be utilized for resistive gas- and photo-sensing. Our result provides insight into electronic interactions in doped MOFs and paves the way towards their electronic applications.

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preprint2016arXiv

High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature

Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermal assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this novel material with silicon (Si) technology. Besides the thorough characterization of this new 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically-stacked heterostructures of PtSe2 on Si which act as both photodiodes and photovoltaic cells. Thus this study establishes PtSe2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.

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preprint2016arXiv

Isotope analysis in the transmission electron microscope

The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure of materials, but not their isotopic composition. Here we differentiate between two isotopes of the same element by quantifying how likely the energetic imaging electrons are to eject atoms. First, we measure the displacement probability in graphene grown from either $^{12}$C or $^{13}$C and describe the process using a quantum mechanical model of lattice vibrations coupled with density functional theory simulations. We then test our spatial resolution in a mixed sample by ejecting individual atoms from nanoscale areas spanning an interface region that is far from atomically sharp, mapping the isotope concentration with a precision better than 20%. Although we use a scanning instrument, our method should be applicable to any atomic resolution transmission electron microscope and to other low-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Confined linear carbon chains: A route to bulk carbyne

The extreme instability and strong chemical activity of carbyne, the infinite sp1 hybridized carbon chain, are responsible for its low possibility to survive in ambient conditions. Therefore, much less has been possible to explore about carbyne as compared to other novel carbon allotropes such as fullerenes, nanotubes and graphene. Although end-capping groups can be used to stabilize carbon chains, length limitation is still a barrier for its actual production, and even more for applications. Here, we report a novel route for bulk production of record long acetylenic linear carbon chains protected by thin double-walled carbon nanotubes. A corresponding extremely high Raman band is the first proof of a truly bulk yield formation of very long arrangements, which is unambiguously confirmed by transmission electron microscopy and near-field Raman spectroscopy. Our production establishes a way to exceptionally long stable carbon chains including more than 2300 carbon atoms, and an elegant forerunner towards the final goal of a bulk production of essentially infinite carbyne.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Raman Characterization of Platinum Diselenide Thin Films

Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film thickness, laser wavelength and laser polarization. Eg and A1g Raman active modes were identified using polarization measurements in the Raman setup. These modes were found to display a clear position and intensity dependence with film thickness, for multiple excitation wavelengths, and their peak positions agree with simulated phonon dispersion curves for PtSe2. These results highlight the practicality of using Raman spectroscopy as a prime characterization technique for newly-synthesized 2D materials.

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preprint2014arXiv

Atomic structure and energetics of large vacancies in graphene

We present a computational study on the topology, energetics and structural deformations for a large number of experimentally observed defect configurations in graphene. We find that both the number of lost hexagonal carbon rings and introduced non-hexagonal rings increase linearly as a function of the vacancy order (number of missing atoms). The formation energies of the defects increase by about 2.2 eV per missing atom after an initial offset, establishing these defects as the lowest energy vacancy configurations studied in graphene to date. In addition, we find that even small point defects, which have been until now assumed flat, cause graphene to bend out of plane when not restricted into prohibitively confined geometries. This effect reaches to relative long distances even for some of the smallest defects, significantly reducing the stress otherwise imposed on the surrounding lattice.

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preprint2014arXiv

Imaging Atomic-Level Random Walk of a Point Defect in Graphene

Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect diffusion is hindered both by the difficulties related to direct imaging of non-periodic structures and by the time scales involved in the diffusion process. Here, instead of imaging thermal diffusion, we stimulate and follow the migration of a divacancy through graphene lattice using a scanning transmission electron microscope operated at 60 kV. The beam-activated process happens on a timescale that allows us to capture a significant part of the structural transformations and trajectory of the defect. The low voltage combined with ultra-high vacuum conditions ensure that the defect remains stable over long image sequences, which allows us for the first time to directly follow the diffusion of a point defect in a crystalline material.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Silicon-carbon bond inversions driven by 60 keV electrons in graphene

We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of non-destructive and atomically precise structural modification and detection for two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic Transport in Composites of Graphite Oxide with Carbon Nanotubes

We show that the presence of electrically insulating graphite oxide (GO) within a single wall carbon nanotube network strongly enhances electrical conductivity, whereas reduced graphite oxide, even though electrically conductive, suppresses electrical conductivity within a composite network with single wall carbon nanotubes. Measurements of Young modulus and of Raman spectra strongly support our interpretation of the indirect role of the oxide groups, present in graphite oxide within the single wall carbon nanotubes/graphite oxide composite, through electronic doping of metallic single wall carbon nanotubes.

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preprint2012arXiv

Mechanical properties of polycrystalline graphene based on a realistic atomistic model

Graphene can at present be grown at large quantities only by the chemical vapor deposition method, which produces polycrystalline samples. Here, we describe a method for constructing realistic polycrystalline graphene samples for atomistic simulations, and apply it for studying their mechanical properties. We show that cracks initiate at points where grain boundaries meet and then propagate through grains predominantly in zigzag or armchair directions, in agreement with recent experimental work. Contrary to earlier theoretical predictions, we observe normally distributed intrinsic strength (~ 50% of that of the mono-crystalline graphene) and failure strain which do not depend on the misorientation angles between the grains. Extrapolating for grain sizes above 15 nm results in a failure strain of ~ 0.09 and a Young's modulus of ~ 600 GPa. The decreased strength can be adequately explained with a conventional continuum model when the grain boundary meeting points are identified as Griffith cracks.

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