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Clemens Mangler

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Published work

6 published item(s)

preprint2020arXiv

CuAu, a hexagonal two-dimensional metal

Growth of two-dimensional metals has eluded materials scientists since the discovery of the atomically thin graphene and other covalently bound 2D materials. Here, we report a two-atom-thick hexagonal copper-gold alloy, grown through thermal evaporation on freestanding graphene and hexagonal boron nitride. The structures are imaged at atomic resolution with scanning transmission electron microscopy and further characterized with spectroscopic techniques. Electron irradiation in the microscope provides sufficient energy for a phase transformation of the 2D structure--atoms are released from their lattice sites with the gold atoms eventually forming face-centered cubic nanoclusters on top of 2D regions during observation. The presence of copper in the alloy enhances sticking of gold to the substrate, which has clear implications for creating atomically thin electrodes for applications utilizing 2D materials. Its practically infinite surface-to-bulk ratio also makes the 2D CuAu particularly interesting for catalysis applications.

preprint2020arXiv

Resolving Few-Layer Antimonene/Graphene Heterostructures

Two-dimensional (2D) antimony (Sb, antimonene) recently attracted interest due to its peculiar electronic properties and its suitability as anode material in next generation batteries. Sb however exhibits a large polymorphic/allotropic structural diversity, which is also influenced by the Sb's support. Thus understanding Sb heterostructure formation is key in 2D Sb integration. Particularly 2D Sb/graphene interfaces are of prime importance as contacts in electronics and electrodes in batteries. We thus study here few-layered 2D Sb/graphene heterostructures by atomic-resolution (scanning) transmission electron microscopy. We find the co-existence of two Sb morphologies: First is a 2D growth morphology of layered beta-Sb with beta-Sb(001)||graphene(001) texture. Second are one-dimensional (1D) Sb nanowires which can be matched to beta-Sb with beta-Sb[2-21] perpendicular to graphene(001) texture and are structurally also closely related to thermodynamically non-preferred cubic Sb(001)||graphene(001). Importantly, both Sb morphologies show rotational van-der-Waals epitaxy with the graphene support. Both Sb morphologies are well resilient against environmental bulk oxidation, although superficial Sb-oxide layer formation merits consideration, including formation of novel epitaxial Sb2O3(111)/beta-Sb(001) heterostructures. Exact Sb growth behavior is sensitive on employed processing and substrate properties including, notably, the nature of the support underneath the direct graphene support. This introduces the substrate underneath a direct 2D support as a key parameter in 2D Sb heterostructure formation. Our work provides insights into the rich phase and epitaxy landscape in 2D Sb and 2D Sb/graphene heterostructures.

preprint2016arXiv

Isotope analysis in the transmission electron microscope

The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure of materials, but not their isotopic composition. Here we differentiate between two isotopes of the same element by quantifying how likely the energetic imaging electrons are to eject atoms. First, we measure the displacement probability in graphene grown from either $^{12}$C or $^{13}$C and describe the process using a quantum mechanical model of lattice vibrations coupled with density functional theory simulations. We then test our spatial resolution in a mixed sample by ejecting individual atoms from nanoscale areas spanning an interface region that is far from atomically sharp, mapping the isotope concentration with a precision better than 20%. Although we use a scanning instrument, our method should be applicable to any atomic resolution transmission electron microscope and to other low-dimensional materials.

preprint2014arXiv

Imaging Atomic-Level Random Walk of a Point Defect in Graphene

Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect diffusion is hindered both by the difficulties related to direct imaging of non-periodic structures and by the time scales involved in the diffusion process. Here, instead of imaging thermal diffusion, we stimulate and follow the migration of a divacancy through graphene lattice using a scanning transmission electron microscope operated at 60 kV. The beam-activated process happens on a timescale that allows us to capture a significant part of the structural transformations and trajectory of the defect. The low voltage combined with ultra-high vacuum conditions ensure that the defect remains stable over long image sequences, which allows us for the first time to directly follow the diffusion of a point defect in a crystalline material.

preprint2014arXiv

Silicon-carbon bond inversions driven by 60 keV electrons in graphene

We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of non-destructive and atomically precise structural modification and detection for two-dimensional materials.

preprint2013arXiv

Electronic Transport in Composites of Graphite Oxide with Carbon Nanotubes

We show that the presence of electrically insulating graphite oxide (GO) within a single wall carbon nanotube network strongly enhances electrical conductivity, whereas reduced graphite oxide, even though electrically conductive, suppresses electrical conductivity within a composite network with single wall carbon nanotubes. Measurements of Young modulus and of Raman spectra strongly support our interpretation of the indirect role of the oxide groups, present in graphite oxide within the single wall carbon nanotubes/graphite oxide composite, through electronic doping of metallic single wall carbon nanotubes.