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Researcher profile

Jana B. Nieder

Jana B. Nieder contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticsquant-ph

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Published work

2 published item(s)

preprint2022arXiv

Quantum random walks in coupled photonic ring resonators

Quantum random walks use interference to obtain faster state space exploration, which can be used for algorithmic purposes. Photonic technologies provide a natural platform for many recent experimental demonstrations. Here we analyze quantum random walks implemented by coherent light propagation in series-coupled photonic ring resonators. We propose a family of graphs modeling these devices and compare quantum and classical random walks on these structures, calculating steady-state and time-dependent solutions. We obtain conditions for quantum advantage in this setting and show how to recover classical random walks by averaging over quantum phases. Preliminary device feasibility tests are carried out via simulations and experimental results using polymeric directional couplers.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and capping dielectric layer can best reproducibly protect the crystal surface of III-Vs, while being compatible with readily available plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low frequency plasma enhanced chemical deposition. Here, the sulfurized GaAs surfaces, the high level of hydrogen ions and the low frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars. We observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity for dry etched GaAs nanopillars. We achieve robust, stable and long-term passivated nanopillar surfaces which creates expectations for remarkable high internal quantum efficiency (IQE>0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors and solar cells.

0 citations0 reviewsNo code linkedOpen access