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Researcher profile

Bruno Romeira

Bruno Romeira contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phphysics.opticscond-mat.mes-hallcond-mat.mtrl-sciEmerging TechnologiesNeural and Evolutionary Computingnlin.PS

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Published work

4 published item(s)

preprint2022arXiv

Artificial optoelectronic spiking neuron based on a resonant tunnelling diode coupled to a vertical cavity surface emitting laser

Excitable optoelectronic devices represent one of the key building blocks for implementation of artificial spiking neurons in neuromorphic (brain-inspired) photonic systems. This work introduces and experimentally investigates an opto-electro-optical (O/E/O) artificial neuron built with a resonant tunnelling diode (RTD) coupled to a photodetector as a receiver and a vertical cavity surface emitting laser as a the transmitter. We demonstrate a well defined excitability threshold, above which this neuron produces 100 ns optical spiking responses with characteristic neural-like refractory period. We utilise its fan-in capability to perform in-device coincidence detection (logical AND) and exclusive logical OR (XOR) tasks. These results provide first experimental validation of deterministic triggering and tasks in an RTD-based spiking optoelectronic neuron with both input and output optical (I/O) terminals. Furthermore, we also investigate in theory the prospects of the proposed system for its nanophotonic implementation with a monolithic design combining a nanoscale RTD element and a nanolaser; therefore demonstrating the potential of integrated RTD-based excitable nodes for low footprint, high-speed optoelectronic spiking neurons in future neuromorphic photonic hardware.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and capping dielectric layer can best reproducibly protect the crystal surface of III-Vs, while being compatible with readily available plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low frequency plasma enhanced chemical deposition. Here, the sulfurized GaAs surfaces, the high level of hydrogen ions and the low frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars. We observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity for dry etched GaAs nanopillars. We achieve robust, stable and long-term passivated nanopillar surfaces which creates expectations for remarkable high internal quantum efficiency (IQE>0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors and solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Bursting and excitability in neuromorphic resonant tunneling diodes

We study in this paper the dynamics of quantum nanoelectronic resonant tunneling diodes (RTDs) as excitable neuromorphic spike generators. We disclose the mechanisms by which the RTD creates excitable all-or-nothing spikes and we identify a regime of bursting in which the RTD emits a random number of closely packed spikes. The control of the latter is paramount for applications in event-activated neuromorphic sensing and computing. Finally, we discuss a regime of multi-stability in which the RTD behaves as a memory. Our results can be extended to other devices exhibiting negative differential conductance.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The physical limits of nanoLEDs and nanolasers for optical communications

Nanoscale light sources are being intensively investigated for their potential to enable low-energy, high-density optical communication and sensing systems. Both nano-light-emitting diodes (nanoLEDs) and nanolasers have been considered, based on advanced nanophotonic concepts such as photonic crystals and plasmonic structures, with dimensions well into the sub-micrometer domain. With decreasing dimensions, light-matter interaction becomes stronger, potentially leading to efficient and ultrafast radiative emission, both in the spontaneous and stimulated regime. These features have created wide expectations for the practical prospects of such nanoscale light sources, in particular for optical interconnects. In this article we examine the limits to the downscaling of LEDs and lasers, and ask ourselves which type of source is most suited to ultralow-power optical communications. Based on simple physical considerations on the scaling of spontaneous and stimulated emission rates for semiconductor active regions at room temperature, we analyze the speed and energy limits for nanoLEDs and nanolasers as a function of their size. The role of spontaneous emission enhancement (Purcell effect) in practical nanophotonic sources is also revisited. The main conclusion is that nanoLEDs reach a fundamental energy/speed limit for data rates exceeding a few Gb/s, whereas nanolasers with active dimensions in the range of few 100s nm may enable direct modulation rates larger than 40 Gb/s at power levels adequate for short-distance and low-energy optical interconnects.

0 citations0 reviewsNo code linkedOpen access