Source author record

J. Vuckovic

J. Vuckovic appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall physics.optics

Catalog footprint

What is connected

2works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2016arXiv

Emission redistribution from a quantum dot-bowtie nanoantenna

We present a combined experimental and simulation study of a single self-assembled InGaAs quantum dot coupled to a nearby ($\sim 25nm$) plasmonic antenna. Micro-photoluminescence spectroscopy shows a $\sim 2.4\times$ increase of intensity, which is attributed to spatial far-field redistribution of the emission from the quantum dot-antenna system. Power-dependent studies show similar saturation powers of $2.5μW$ for both coupled and uncoupled quantum dot emission in polarization-resolved measurements. Moreover, time-resolved spectroscopy reveals the absence of Purcell-enhancement of the quantum dot coupled to the antenna as compared to an uncoupled dot, yielding comparable exciton lifetimes of $τ\sim0.5ns$. This observation is supported by numerical simulations, suggesting only minor Purcell-effects of $<2\times$ for emitter-antenna separations $>25nm$. The observed increased emission from a coupled quantum dot-plasmonic antenna system is found to be in good qualitative agreement with numerical simulations and will lead to a better understanding of light-matter-coupling in such novel semiconductor-plasmonic hybrid systems

preprint2014arXiv

A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

Using integrated superconducting single photon detectors we probe ultra-slow exciton capture and relaxation dynamics in single self-assembled InGaAs quantum dots embedded in a GaAs ridge waveguide. Time-resolved luminescence measurements performed with on- and off-chip detection reveal a continuous decrease in the carrier relaxation time from 1.22 $\pm$ 0.07 ns to 0.10 $\pm$ 0.07 ns upon increasing the number of non-resonantly injected carriers. By comparing off-chip time-resolved spectroscopy with spectrally integrated on-chip measurements we identify the observed dynamics in the rise time ($τ_r$) as arising from a relaxation bottleneck at low excitation levels. From the comparison with the temporal dynamics of the single exciton transition with the on-chip emission signal, we conclude that the relaxation bottleneck is circumvented by the presence of charge carriers occupying states in the bulk material and the two-dimensional wetting layer continuum. A characteristic -2/3 power law dependence of the rise time is observed suggesting Auger-type scattering between carriers trapped in the quantum dot and the two-dimensional wetting layer continuum which circumvents the phonon relaxation bottleneck.