Researcher profile

J. -M. Gérard

J. -M. Gérard contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall hep-ph physics.optics quant-ph

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preprint2020arXiv

Broad diversity of near-infrared single-photon emitters in silicon

We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.

preprint2013arXiv

Probing top-Higgs non-standard interactions at the LHC

Effective interactions involving both the top quark and the Higgs field are among the least constrained of all possible (gauge invariant) dimension-six operators in the Standard Model. Such a handful of operators, in particular the top quark chromomagnetic dipole moment, might encapsulate signs of the new physics responsible for electroweak symmetry breaking. In this work, we compute the contributions of these operators to inclusive Higgs and t tbar h production. We argue that: i) rather strong constraints on the overall size of these operators can already be obtained from the current limits/evidence on Higgs production at the LHC; ii) t tbar h production will provide further key information that is complementary to t tbar measurements, and the possibility of discriminating among different contributions by performing accurate measurements of total and differential rates.

preprint2009arXiv

Continuous-wave versus time-resolved measurements of Purcell-factors for quantum dots in semiconductor microcavities

The light emission rate of a single quantum dot can be drastically enhanced by embedding it in a resonant semiconductor microcavity. This phenomenon is known as the Purcell effect, and the coupling strength between emitter and cavity can be quantified by the Purcell factor. The most natural way for probing the Purcell effect is a time-resolved measurement. However, this approach is not always the most convenient one, and alternative approaches based on a continuous-wave measurement are often more appropriate. Various signatures of the Purcell effect can indeed be observed using continuous-wave measurements (increase of the pump rate needed to saturate the quantum dot emission, enhancement of its emission rate at saturation, change of its radiation pattern), signatures which are encountered when a quantum dot is put on-resonance with the cavity mode. All these observations potentially allow one to estimate the Purcell factor. In this paper, we carry out these different types of measurements for a single quantum dot in a pillar microcavity and we compare their reliability. We include in the data analysis the presence of independent, non-resonant emitters in the microcavity environment, which are responsible for a part of the observed fluorescence.