Researcher profile

J. L. Cohn

J. L. Cohn contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2014arXiv

Extreme thermopower anisotropy and interchain transport in the quasi-one-dimensional metal Li(0.9)Mo(6)O(17)

Thermopower and electrical resistivity measurements transverse to the conducting chains of the quasi-one-dimensional metal Li(0.9)Mo(6)O(17) are reported in the temperature range 5 K <= T <= 500 K. For T>= 400 K the interchain transport is determined by thermal excitation of charge carriers from a valence band ~ 0.14 eV below the Fermi level, giving rise to a large, p-type thermopower that coincides with a small, n-type thermopower along the chains. This dichotomy -- semiconductor-like in one direction and metallic in a mutually perpendicular direction -- gives rise to substantial transverse thermoelectric (TE) effects and a transverse TE figure of merit among the largest known for a single compound.

preprint2012arXiv

Giant Nernst effect and bipolarity in the quasi-one-dimensional metal, Li(0.9)Mo(6)O(17)

The Nernst coefficient for the quasi-one-dimensional metal, Li(0.9)Mo(6)O(17), is found to be among the largest known for metals (~500 microV/KT at T~20K), and is enhanced in a broad range of temperature by orders of magnitude over the value expected from Boltzmann theory for carrier diffusion. A comparatively small Seebeck coefficient implies that Li(0.9)Mo(6)O(17) is bipolar with large, partial Seebeck coefficients of opposite sign. A very large thermomagnetic figure of merit, ZT~0.5, is found at high field in the range T~35-50K.

preprint2012arXiv

Stoichiometry, structure, and transport in the quasi-one-dimensional metal, Li(0.9)Mo(6)O(17)

A correlation between lattice parameters, oxygen composition, and the thermoelectric and Hall coefficients is presented for single-crystal Li(0.9)Mo(6)O(17), a quasi-one-dimensional (Q1D) metallic compound. The possibility that this compound is a compensated metal is discussed in light of a substantial variability observed in the literature for these transport coefficients.

preprint2012arXiv

Strain-controlled band engineering and self-doping in ultrathin LaNiO$_3$ films

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO$_3$ films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the transport coefficients evolve in a manner strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in the transport properties are due to self-doping in the low-energy electronic band structure. The results imply that thin-film epitaxy can serve as a new means to achieve hole-doping in other (negative) charge-transfer gap transition metal oxides without resorting to chemical substitution.

preprint2011arXiv

Asymmetric orbital-lattice interactions in ultra-thin correlated oxide films

Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral &#34;breathing&#34; distortion, which, in turn, produces an emergent charge-ordered ground state with an altered ligand-hole density and bond covalency. Control of this new mechanism opens a pathway to rational orbital engineering, providing a platform for artificially designed Mott materials.

preprint2009arXiv

Anisotropic In-Plane Strain and Transport in Epitaxial Nd(0.2)Sr(0.8)MnO(3) Thin Films

The structure, morphology, and electrical properties of epitaxial a-axis oriented thin films of Nd(0.2)Sr(0.8)MnO(3) are reported for thicknesses 10 nm <= t <= 150 nm. Films were grown with both tensile and compressive strain on various substrates. It is found that the elongated crystallographic c-axes of the films remain fully strained to the substrates for all thicknesses in both strain states. Relaxation of the a and b axes is observed for t>= 65 nm with films grown under tensile strain developing uniaxial crack arrays (running along the c axis) due to a highly anisotropic thermal expansion. For the latter films, the room-temperature in-plane electrical resistivity anisotropy, rho_b/rho_c, increases approximately exponentially with increasing film thickness to values of ~1000 in the thickest films studied. Films under tension have their Neel temperatures enhanced by ~25 K independent of thickness, consistent with an enhancement of ferromagnetic exchange along their expanded c axes.