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Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers

p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration.

preprint1999arXivOpen access
D. FerrandJ. CibertC. BourgognonS. TatarenkoA. WasielaG. FishmanA. BonanniH. SitterS. KolesnikJ. JaroszynskiA. BarczT. Dietl
cond-mat.mtrl-sci
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Open access12 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
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D. FerrandJ. CibertC. BourgognonS. TatarenkoA. WasielaG. FishmanA. BonanniH. SitterS. KolesnikJ. JaroszynskiA. BarczT. Dietl

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