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Researcher profile

Igor Krylov

Igor Krylov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
math.AGcond-mat.mtrl-scimath.GRphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Birational rigidity of orbifold degree 2 del Pezzo fibrations

Varieties fibered into del Pezzo surfaces form a class of possible outputs of the minimal model program. It is known that del Pezzo fibrations of degrees $1$ and $2$ over the projective line with smooth total space satisfying the so-called $K^2$-condition are birationally rigid: their Mori fibre space structure is unique. This implies that they are not birational to any Fano varieties, conic bundles or other del Pezzo fibrations. In particular, they are irrational. The families of del Pezzo fibrations with smooth total space of degree $2$ are rather special, as for "most" families a general del Pezzo fibration has the simplest orbifold singularities. We prove that orbifold del Pezzo fibrations of degree $2$ over the projective line satisfying explicit generality conditions as well as a generalised $K^2$-condition are birationally rigid.

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preprint2019arXiv

Understanding Leakage Currents through $Al_2O_3$ on $SrTiO_3$

Leakage currents through insulators received continuous attention for decades, owing to their importance for a wide range of technologies, and interest in their fundamental mechanisms. This work investigates the leakage currents through atomic layer deposited (ALD) $Al_2O_3$, grown on $SrTiO_3$. This combination is not only a key building block of oxide electronics, but also a clean system for studying the leakage mechanisms without interfacial layers that form on most of the conventional bottom electrodes. We show how tiny differences in the deposition process can have a dramatic effect on the leakage behavior. Detailed analysis of the leakage behavior rules out Fowler-Nordheim tunneling (FNT) and thermionic emission, and leaves the trap-related mechanisms of trap-assisted tunneling (TAT) and Poole-Frenkel as the likely mechanisms. After annealing the sample in air, the currents are reduced, which is ascribed to transition from trap-based mechanism to FNT, due to the elimination of the traps. The dramatic role of the assumptions regarding the flat-band voltage used for analysis is critically discussed, and the sensitivity of the extracted parameters on this magnitude is quantitatively described. We show that field effect devices based on structures similar to those described here, should be able to modulate $>10^{13} cm^{-2}$ electrons. These results provide general guidelines for reducing and analyzing leakage currents in insulators, and highlight some of the possible approaches and pitfalls in their analysis.

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