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Eilam Yalon

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4 publications

preprint2022arXiv

Stateful Logic using Phase Change Memory

Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are used to perform the logic operations without reading or moving any data outside the memory array. Stateful logic has been previously demonstrated using several resistive memory types, mostly by resistive RAM (RRAM). Here we present a new method to design stateful logic using a different resistive memory - phase change memory (PCM). We propose and experimentally demonstrate four logic gate types (NOR, IMPLY, OR, NIMP) using commonly used PCM materials. Our stateful logic circuits are different than previously proposed circuits due to the different switching mechanism and functionality of PCM compared to RRAM. Since the proposed stateful logic form a functionally complete set, these gates enable sequential execution of any logic function within the memory, paving the way to PCM-based digital processing-in-memory systems.

preprint2020arXiv

High Current Density in Monolayer MoS2_2 Doped by AlOx_x

Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low temperature (< 200∘^\circ C) sub-stoichiometric AlOx_x provides a stable n-doping layer for monolayer MoS2_2, compatible with circuit integration. This approach achieves carrier densities > 2x1013^{13} 1/cm2^2, sheet resistance as low as ~7 kOhm/sq, and good contact resistance ~480 Ohm.um in transistors from monolayer MoS2_2 grown by chemical vapor deposition. We also reach record current density of nearly 700 uA/um (>110 MA/cm2^2) in this three-atom-thick semiconductor while preserving transistor on/off current ratio > 10610^6. The maximum current is ultimately limited by self-heating and could exceed 1 mA/um with better device heat sinking. With their 0.1 nA/um off-current, such doped MoS2_2 devices approach several low-power transistor metrics required by the international technology roadmap

preprint2020arXiv

Temperature Dependent Thermal Boundary Conductance of Monolayer MoS2_2 by Raman Thermometry

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS2_2 with AlN and SiO2_2, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MWm−^-2^2K−^-1^1 near room temperature, increasing as ~ T0^0.^.6^65^5 in the range 300 - 600 K. The similar TBC of MoS2_2 with the two substrates indicates that MoS2_2 is the "softer" material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. Our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.

preprint2019arXiv

Understanding Leakage Currents through Al2O3Al_2O_3 on SrTiO3SrTiO_3

Leakage currents through insulators received continuous attention for decades, owing to their importance for a wide range of technologies, and interest in their fundamental mechanisms. This work investigates the leakage currents through atomic layer deposited (ALD) Al2O3Al_2O_3, grown on SrTiO3SrTiO_3. This combination is not only a key building block of oxide electronics, but also a clean system for studying the leakage mechanisms without interfacial layers that form on most of the conventional bottom electrodes. We show how tiny differences in the deposition process can have a dramatic effect on the leakage behavior. Detailed analysis of the leakage behavior rules out Fowler-Nordheim tunneling (FNT) and thermionic emission, and leaves the trap-related mechanisms of trap-assisted tunneling (TAT) and Poole-Frenkel as the likely mechanisms. After annealing the sample in air, the currents are reduced, which is ascribed to transition from trap-based mechanism to FNT, due to the elimination of the traps. The dramatic role of the assumptions regarding the flat-band voltage used for analysis is critically discussed, and the sensitivity of the extracted parameters on this magnitude is quantitatively described. We show that field effect devices based on structures similar to those described here, should be able to modulate >1013cm−2>10^{13} cm^{-2} electrons. These results provide general guidelines for reducing and analyzing leakage currents in insulators, and highlight some of the possible approaches and pitfalls in their analysis.

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