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Lior Kornblum

Lior Kornblum contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films

Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetry mismatch. Often these act in conjunction with a strong dependence on the layer thickness, especially for ultrathin layers. Moreover, as a result of these effects, the temperature dependence of the structure may deviate largely from that of the bulk. The temperature-dependent structure of 3 to 44 unit cell thick ferromagnetic SrRuO$_3$ films grown on Nb-doped SrTiO$_3$ substrates are investigated using a combination of high-resolution synchrotron X-ray diffraction and high-resolution electron microscopy. This aims to shed light on the intriguing magnetic and magnetotransport properties of epitaxial SRO layers, subjected to extensive investigations lately. The oxygen octahedral tilts and rotations are found to be strongly dependent on the temperature, the film thickness, and the distance away from the film-substrate interface. As a striking manifestation of the coupling between magnetic order and lattice structure, the Invar effect is observed below the ferromagnetic transition temperature in epitaxial layers as thin as 8 unit cells, similar to bulk ferromagnetic SrRuO$_3$.

preprint2019arXiv

Understanding Leakage Currents through $Al_2O_3$ on $SrTiO_3$

Leakage currents through insulators received continuous attention for decades, owing to their importance for a wide range of technologies, and interest in their fundamental mechanisms. This work investigates the leakage currents through atomic layer deposited (ALD) $Al_2O_3$, grown on $SrTiO_3$. This combination is not only a key building block of oxide electronics, but also a clean system for studying the leakage mechanisms without interfacial layers that form on most of the conventional bottom electrodes. We show how tiny differences in the deposition process can have a dramatic effect on the leakage behavior. Detailed analysis of the leakage behavior rules out Fowler-Nordheim tunneling (FNT) and thermionic emission, and leaves the trap-related mechanisms of trap-assisted tunneling (TAT) and Poole-Frenkel as the likely mechanisms. After annealing the sample in air, the currents are reduced, which is ascribed to transition from trap-based mechanism to FNT, due to the elimination of the traps. The dramatic role of the assumptions regarding the flat-band voltage used for analysis is critically discussed, and the sensitivity of the extracted parameters on this magnitude is quantitatively described. We show that field effect devices based on structures similar to those described here, should be able to modulate $>10^{13} cm^{-2}$ electrons. These results provide general guidelines for reducing and analyzing leakage currents in insulators, and highlight some of the possible approaches and pitfalls in their analysis.