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Researcher profile

I-Te Lu

I-Te Lu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-conphysics.opticsquant-ph

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Published work

3 published item(s)

preprint2026arXiv

Vacuum-dressed superconductivity in NbN observed in a high-$Q$ terahertz cavity

Emerging theoretical frameworks suggest that physical properties of matter can be altered within an optical cavity by harnessing quantum vacuum electromagnetic fluctuations, even in the total absence of external driving fields. Among the most intriguing predictions is the potential to noninvasively manipulate superconductivity. Here, we experimentally observe modified superconductivity in niobium nitride (NbN) thin films within high-quality-factor ($Q$) terahertz cavities. Using terahertz time-domain spectroscopy, we characterize the NbN response both in free space and within a high-$Q$ photonic-crystal cavity. Our analysis reveals significant cavity-induced modifications to the optical conductivity. A theoretical model indicates that these changes originate from a substantial ($\sim13\,\%$) reduction in the superfluid density and a minor ($\sim2\,\%$) reduction in the superconducting gap, driven by cavity vacuum fluctuations. These results demonstrate a platform for engineering ground states via vacuum--matter coupling, opening frontiers in cavity materials science.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ab initio electron-defect interactions using Wannier functions

Computing electron-defect (e-d) interactions from first principles has remained impractical due to computational cost. Here we develop an interpolation scheme based on maximally localized Wannier functions (WFs) to efficiently compute e-d interaction matrix elements. The interpolated matrix elements can accurately reproduce those computed directly without interpolation, and the approach can significantly speed up calculations of e-d relaxation times and defect-limited charge transport. We show example calculations of vacancy defects in silicon and copper, for which we compute the e-d relaxation times on fine uniform and random Brillouin zone grids (and for copper, directly on the Fermi surface) as well as the defect-limited resistivity at low temperature. Our interpolation approach opens doors for atomistic calculations of charge carrier dynamics in the presence of defects.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Efficient Ab Initio Calculations of Electron-Defect Scattering and Defect-Limited Carrier Mobility

Electron-defect ($e$-d) interactions govern charge carrier dynamics at low temperature, where they limit the carrier mobility and give rise to phenomena of broad relevance in condensed matter physics. Ab initio calculations of $e$-d interactions are still in their infancy, mainly because they require large supercells and computationally expensive workflows. Here we develop an efficient ab initio approach for computing elastic $e$-d interactions, their associated $e$-d relaxation times (RTs), and the low-temperature defect-limited carrier mobility. The method is applied to silicon with simple neutral defects, such as vacancies and interstitials. Contrary to conventional wisdom, the computed $e$-d RTs depend strongly on carrier energy and defect type, and the defect-limited mobility is temperature dependent. These results highlight the shortcomings of widely employed heuristic models of $e$-d interactions in materials. Our method opens new avenues for studying $e$-d scattering and low-temperature charge transport from first principles.

0 citations0 reviewsNo code linkedOpen access