Researcher profile

S. Erden Gulebaglan

S. Erden Gulebaglan contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2013arXiv

The Dip Effect under Integer Quantized Hall Conditions

In this work we investigate an unusual transport phenomenon observed in two-dimensional electron gas under integer quantum Hall effect conditions. Our calculations are based on the screening theory, using a semi-analytical model. The transport anomalies are \emph{dip} and overshoot effects, where the Hall resistance decreases (or increases) unexpectedly at the quantized resistance plateaus intervals. We report on our numerical findings of the \emph{dip} effect in the Hall resistance, considering GaAs/AlGaAs heterostructures in which we investigated the effect under different experimental conditions. We show that, similar to overshoot, the amplitude of the dip effect is strongly influenced by the edge reconstruction due to electrostatics. It is observed that the steep potential variation close to the physical boundaries of the sample results in narrower incompressible strips, hence, the experimental observation of the dip effect is limited by the properties of these current carrying strips. By performing standard Hall resistance measurements on gate defined narrow samples, we demonstrate that the predictions of the screening theory is in well agreement with our experimental findings.

preprint2011arXiv

Local density of states of two-dimensional electron systems under strong in-plane electric and perpendicular magnetic fields

We calculate the local density of states of a two-dimensional electron system under strong crossed magnetic and electric fields. We assume a strong perpendicular magnetic field which, in the absence of in-plane electric fields and collision broadening effects, leads to Landau quantization and the well-known singular Landau density of states. Unidirectional in-plane electric fields lead to a broadening of the delta-function-singularities of the Landau density of states. This results in position-dependent peaks of finite height and width, which can be expressed in terms of the energy eigenfunctions. These peaks become wider with increasing strength of the electric field and may eventually overlap, which indicates the onset of inter-Landau-level scattering, if electron-impurity scattering is considered. We present analytical results for two simple models and discuss their possible relevance for the breakdown of the integer quantized Hall effect. In addition, we consider a more realistic model for an incompressible stripe separating two compressible regions, in which nearly perfect screening pins adjacent Landau levels to the electrochemical potential. We also discuss the effect of an imposed current on the local density of states in the stripe region.

preprint2010arXiv

Evanescent incompressible strips as origin of the observed Hall resistance overshoot

In this work we provide a systematic explanation to the unusual non-monotonic behavior of the Hall resistance observed at two-dimensional electron systems. We use a semi-analytical model based on the interaction theory of the integer quantized Hall effect to investigate the existence of the anomalous, \emph{i.e} overshoot, Hall resistance $R_{H}$. The observation of the overshoot resistance at low magnetic field edge of the plateaus is elucidated by means of overlapping evanescent incompressible strips, formed due to strong magnetic fields and interactions. Utilizing a self-consistent numerical scheme we also show that, if the magnetic field is decreased the $R_{H}$ decreases to its expected value. The effects of the sample width, temperature, disorder strength and magnetic field on the overshoot peaks are investigated in detail. Based on our findings, we predict a controllable procedure to manipulate the maxima of the peaks, which can be tested experimentally. Our model does not depend on specific and intrinsic properties of the material, provided that a single particle gap exists.