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Researcher profile

I. J. Maasilta

I. J. Maasilta contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-con

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Published work

9 published item(s)

preprint2014arXiv

Microwave nanobolometer based on proximity Josephson junctions

We introduce a microwave bolometer aimed at high-quantum-efficiency detection of wave packet energy within the framework of circuit quantum electrodynamics, the ultimate goal being single microwave photon detection. We measure the differential thermal conductance between the detector and its heat bath, obtaining values as low as 5 fW/K at 50 mK. This is one tenth of the thermal conductance quantum and corresponds to a theoretical lower bound on noise-equivalent-power of order $10^{-20}$ $W/\sqrt{\mbox{Hz}}$ at 50 mK. By measuring the differential thermal conductance of the same bolometer design in qualitatively different environments and materials, we determine that electron--photon coupling dominates the thermalization of our nanobolometer.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and Cu-TaO$_{x}$-TaN$_{x} $), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature $T_{\text{C}}$ of the TaN$_{x} $ film at $\sim 5$ K down to $\sim$ 0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Niobium nitride-based normal metal-insulator-superconductor tunnel junction microthermometer

We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow evaporation for the final device fabrication. The subgap conductance of these devices exhibit a strong temperature dependence, rendering them suitable for thermometry from $\sim$ 0.1 K all the way up to the superconducting transition temperature of the NbN layer, which was here $\sim 11$ K, but could be extended up to $\sim 16$ K in our PLD chamber. Our data fits well to the single particle NIS tunnel junction theory, with an observed proximised superconducting gap value $\sim $ 1 meV for a 40 nm thick Al overlayer. Although this high value of the superconducting energy gap is promising for potential electronic NIS cooling applications as well, the high value of the tunneling resistance inhibits electronic cooling in the present devices. Such opaque barriers are, however, ideal for thermometry purposes as self-induced thermal effects are thus minimized.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Normal metal - superconductor decoupling as a source of thermal fluctuation noise in transition-edge sensors

We have studied the origin of excess noise in superconducting transition-edge sensors (TES) with several different detector designs. We show that most of the observed noise and complex impedance features can be explained by a thermal model consisting of three bodies. We suggest that one of the thermal blocks and the corresponding thermal fluctuation noise arises due to the high-frequency thermal decoupling of the normal and superconducting phase regions inside the TES film. Our results are also consistent with the prediction that in thin bilayer proximitized superconductors, the jump in heat capacity at the critical temperature is smaller than the universal BCS theory result.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Sub-micron normal-metal/insulator/superconductor tunnel junction thermometer and cooler using Nb

We have successfully fabricated Cu/AlOx-Al/Nb normal-metal/insulator/superconductor tunnel junction devices with a high value of the superconducting gap (up to $\sim 1$ mV), using electron-beam lithography and angle evaporation techniques in the sub-micron scale. The subgap conductance of these junctions shows the expected strong temperature dependence, rendering them suitable for thermometry all the way from 100 mK to 6 K. In addition, some direct electronic cooling of the normal metal was also seen at bias values near the gap edge. The device performance was strongly influenced by the details of the Al layer geometry, with lateral spilling of the aluminium giving rise to strong extra subgap features, and the thickness of Al layer affecting the proximised superconducting gap value of the superconducting Al/Nb bilayer.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Suppression of magnetic flux avalanches and recovery of the critical state in superconducting NbN films

Thermo-magnetic instability (TMI) in superconductors is known to destroy the critical state via magnetic flux avalanches, and hence it deteriorates the ability of the superconductors to shield external magnetic field. In this work, we quantify to what extent the shielding current is affected by TMI. We recover the critical state in one half of a thermo-magnetically unstable NbN film by coating it with a thin layer of Cu. Suppression of the instability in the metal coated part is confirmed by the results of a direct real time magneto-optical imaging. A pattern of discontinuity lines in the observed flux distribution indicates that only one quarter of the shielding current flows through the whole sample, including the unstable uncoated part, while three quarters flow in loops within the stable Cu-coated part.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Cooling, conductance and thermometric performance of non-ideal normal metal-superconductor tunnel junction pairs

We have investigated the effect of a difference in the tunnelling resistances of the individual normal metal-insulator-superconductor (NIS) tunnel junctions in a double junction SINIS device, with particular emphasis on the impact on the conductance, cooling and thermometric performance. By solving the electrical and thermal equations of the junctions in a self-consistent way, we find that asymmetry gives rise to many new features, such as appearance of an excess sub-gap current, improved cooling performance, exhibition of negative differential resistance, and improved temperature range of thermometric sensitivity. Experiments were also carried out to complement some of the numerical results. In addition, we studied theoretically and experimentally the effect of a finite series resistance, which also causes an excess current in the subgap region, and a suppression of the conductance maxima at the gap edge. Experimental results agree well with the theoretical predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Temperature Profile for Ballistic and Diffusive Phonon Transport in a Suspended Membrane with a Radial Symmetric Heat Source

We have calculated the temperature profiles for phonon heat transport in a suspended membrane with a radially symmetric heat source in the two extreme cases of either fully ballistic or fully diffusive transport. Theoretical results confirm that it is possible to distinguish these two transport mechanisms from the radial temperature profiles alone. Models are also compared to experimental data measured with 40 nm thick, free standing silicon nitride membranes below 1 K by using tunnel junction (SINIS) thermometers. The measured temperature profile is qualitatively in agreement with the ballistic model.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Strain sensing with sub-micron sized Al-AlOx-Al tunnel junctions

We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an AFM tip attached to a stiff cantilever. A large relative change in the tunneling resistance in response to the applied strain (gauge factor) was observed, up to a value 37. This facilitates local static strain variation measurements down to ~10^{-7}.

0 citations0 reviewsNo code linkedOpen access