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Researcher profile

J. T. Karvonen

J. T. Karvonen contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-con

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Published work

4 published item(s)

preprint2012arXiv

Sub-micron normal-metal/insulator/superconductor tunnel junction thermometer and cooler using Nb

We have successfully fabricated Cu/AlOx-Al/Nb normal-metal/insulator/superconductor tunnel junction devices with a high value of the superconducting gap (up to $\sim 1$ mV), using electron-beam lithography and angle evaporation techniques in the sub-micron scale. The subgap conductance of these junctions shows the expected strong temperature dependence, rendering them suitable for thermometry all the way from 100 mK to 6 K. In addition, some direct electronic cooling of the normal metal was also seen at bias values near the gap edge. The device performance was strongly influenced by the details of the Al layer geometry, with lateral spilling of the aluminium giving rise to strong extra subgap features, and the thickness of Al layer affecting the proximised superconducting gap value of the superconducting Al/Nb bilayer.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Temperature Profile for Ballistic and Diffusive Phonon Transport in a Suspended Membrane with a Radial Symmetric Heat Source

We have calculated the temperature profiles for phonon heat transport in a suspended membrane with a radially symmetric heat source in the two extreme cases of either fully ballistic or fully diffusive transport. Theoretical results confirm that it is possible to distinguish these two transport mechanisms from the radial temperature profiles alone. Models are also compared to experimental data measured with 40 nm thick, free standing silicon nitride membranes below 1 K by using tunnel junction (SINIS) thermometers. The measured temperature profile is qualitatively in agreement with the ballistic model.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Direct measurement of the electron-phonon relaxation rate in thin copper films

We have used normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry at sub-Kelvin temperatures. With the help of these thermometers, we have developed an ac-technique to measure the electron-phonon (e-p) scattering rate directly, without any other material or geometry dependent parameters, based on overheating the electron gas. The technique is based on Joule heating the electrons in the frequency range DC-10 MHz, and measuring the electron temperature in DC. Because of the nonlinearity of the electron-phonon coupling with respect to temperature, even the DC response will be affected, when the heating frequency reaches the natural cut-off determined by the e-p scattering rate. Results on thin Cu films show a $T^{4}$ behavior for the scattering rate, in agreement with indirect measurement of similar samples and numerical modeling of the non-linear response.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Electron-phonon interaction in thin copper and gold films

We have studied the electron-phonon (e-p) interaction in thin Cu and Au films at sub-Kelvin temperatures with the help of the hot electron effect, using symmetric normal metal-insulator-superconductor tunnel junction pairs as thermometers. By Joule heating the electron gas and measuring the electron and the lattice temperatures simultaneously, we show that the electron-phonon scattering rate follows a $T^{4}$ temperature dependence in both metals. The result is in accordance with the theory of e-p scattering in disordered films with vibrating boudaries and impurities, in contrast to the $T^{3}$-law expected for pure samples, and $T^{2}$-law for static disorder.

0 citations0 reviewsNo code linkedOpen access