Researcher profile

I. A. Dmitriev

I. A. Dmitriev contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

High-fidelity tomography of fluorescent ion qubits under conditions of limited discrimination between bright and dark levels

The present work is devoted to the development of a method for high-precision tomography of ion qubit registers under conditions of limited distinguishability of the states of a logical value 0 and a logical value 1. In the considered ion qubits, the identification of the quantum state is achieved by measuring the fluorescence of the ion by repeated excitation of the cyclic transition, which includes only the lower energy state that sets a logical value 0 and becomes bright, but does not include the upper metastable state that remains dark and sets logical value 1. It is important to note that it is not always possible to achieve low levels of registration errors due to the finite lifetime of excited levels, photon scattering, dark noise, low numerical aperture values, etc. However, even under such conditions, with use of the model of fuzzy quantum measurements, it is possible to provide precise control of quantum states. We show that a model that is characterized by relatively high levels of errors under conditions, where we have a reliable statistical model of their occurrence, is more accurate than the case when the considered errors are small, but we do not have an adequate statistical model for the occurrence of these errors. In the given illustrative examples, we show that the factor of reducing the loss of accuracy with the use of the model of fuzzy measurements can reach values of the order of 1000 or more in comparison with standard measurements. The obtained results are essential for the development of high-precision methods for controlling the technology of quantum computing on the ion platform.

preprint2022arXiv

Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene

We report on observation of the infrared photoresistance of twisted bilayer graphene under continuous quantum cascade laser illumination at a frequency of 57.1 THz. The photoresistance shows an intricate sign-alternating behavior under variations of temperature and back gate voltage, and exhibits giant resonance-like enhancements at certain gate voltages. The structure of the photoresponse correlates with weaker features in the dark dc resistance reflecting the complex band structure of twisted bilayer graphene. It is shown that the observed photoresistance is well captured by a bolometric model describing the electron and hole gas heating, which implies an ultrafast thermalization of the photoexcited electron-hole pairs in the whole range of studied temperatures and back gate voltages. We establish that photoresistance can serve a highly sensitive probe of the temperature variations of electronic transport in twisted bilayer graphene.

preprint2022arXiv

THz radiation induced circular Hall effect in graphene

We report on the observation of the circular transversal terahertz photoconductivity in monolayer graphene supplied by a back gate. The photoconductivity response is caused by the free carrier absorption and reverses its sign upon switching the radiation helicity. The observed dc Hall effect manifests the time inversion symmetry breaking induced by circularly polarized terahertz radiation in the absence of a magnetic field. For low gate voltages, the photosignal is found to be proportional to the radiation intensity and can be ascribed to the alignment of electron momenta by the combined action of THz and static electric fields as well as by the dynamic heating and cooling of the electron gas. Strikingly, at high gate voltages, we observe that the linear-in-intensity Hall photoconductivity vanishes; the photoresponse at low intensities becomes superlinear and varies with the square of the radiation intensity. We attribute this behavior to the interplay of the second- and fourth-order effects in the radiation electric field which has not been addressed theoretically so far and requires additional studies.

preprint2020arXiv

Anomalous Hall effect in 2D Rashba ferromagnet

Skew scattering on rare impurity configurations is shown to dominate the anomalous Hall effect in a 2D Rashba ferromagnet. The mechanism originates in scattering on rare impurity pairs separated by distances of the order of the Fermi wave length. Corresponding theoretical description goes beyond the conventional non-crossing approximation. The mechanism provides the only contribution to the anomalous Hall conductivity in the most relevant metallic regime and strongly modifies previously obtained results for lower energies in the leading order with respect to impurity strength.

preprint2020arXiv

Observation of High Harmonics of the Cyclotron Resonance in Microwave Transmission of a High-Mobility Two-Dimensional Electron System

We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relative amplitude (up to 1%) of the transmittance oscillations appears to be small, they represent a significant (>50%) modulation of the absorption coefficient. The analysis of obtained results demonstrates that the low-B decay, magnitude, and polarization dependence of the transmittance oscillations accurately follow the theory describing photon-assisted scattering between distant disorder-broadened Landau levels. The extracted sample parameters reasonably well describe the concurrently measured MIRO. Our results provide an insight into the MIRO polarization immunity problem and pave the way to probe diverse high-frequency transport properties of high-mobility systems using precise transmission measurements.

preprint2020arXiv

Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te

We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states.