Researcher profile

Hyun-Tak Kim

Hyun-Tak Kim contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Identifying diverging-effective mass in MOSFET and $^3$He systems

Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass near Mott insulators was measured in strongly correlated Mott systems such as a fermion $^3$He and a Si metal-oxide-semiconductor-field-effect transistor, and is closely fitted by the effective mass obtained by the extension of the Brinkman-Rice(BR) picture, $m^*/m=1/[1-(U/U_c)^2]=1/(1-κ^2_{BR}ρ^4)$ when $κ^2_{BR}{\approx}1({\neq}$1), where $0<U/U_c=κ_{BR}ρ^2<1$, correlation strength is $κ_{BR}$, band-filling is $ρ$. Its identification is a percolation of a constant mass in the Brinkman-Rice picture. Over $κ_{BR}{\approx}0.96$ is evaluated.

preprint2021arXiv

Mott switching and structural transition in the metal phase of $VO_2$ nanodomain

$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition or a Peierls transition. This complication is caused by metal and insulator coexistence, which is an inherent property of the IMT region. Thus, the acquired data in the IMT region are averaged over the two phases in many experiments. We overcome the issue by probing the electronic state of the monoclinic structure and by introducing a model that accounts for the coexisting phases. We reveal the Mott IMT in the non-distorted monoclinic nanodomain between $55-63^oC$, and the distortion-assisted SPT above $60^oC$.

preprint2020arXiv

Fallacies on pairing symmetry and intrinsic electronic Raman spectrum in high-Tc cuprate superconductors

Certain significant fallacies are involved in discussions of the high-Tc mechanism unsolved for over 30 years in cuprate superconductors. These fallacies are explored with the aim of unravelling this mechanism. Moreover, using polarised electronic Raman scattering in inhomogeneous underdoped cuprate superconductors, the intrinsic nonlinear Raman spectrum is obtained by subtracting the pseudogap characteristic of a nonlinear from the linear Raman spectrum measured in the B2g mode of the node area below the critical temperature. The intrinsic nonlinear behaviour implies the existence of the nodal superconducting gap denying dx2-y2-wave pairing symmetry. An origin of the nodal superconducting gap is discussed.

preprint2012arXiv

Terahertz nano antenna enabled early transition in VO2

We study terahertz transmission through nano-patterned vanadium dioxide thin film. It is found that the patterning allows the lowering of the apparent transition temperature. For the case of the smallest width nano antennas, the transition temperature is lower by as many as ten degrees relative to the bare film, so that the nano patterned hysteresis curves completely separate themselves from their bare film counterparts. This early transition comes from the one order of magnitude enhanced effective dielectric constants by nano antennas. This phenomenon opens up the possibility of transition temperature engineering.

preprint2011arXiv

Current oscillations in Vanadium Dioxide: evidence for electrically triggered percolation avalanches

In this work, we experimentally and theoretically explore voltage controlled oscillations occurring in micro-beams of vanadium dioxide. These oscillations are a result of the reversible insulator to metal phase transition in vanadium dioxide. Examining the structure of the observed oscillations in detail, we propose a modified percolative-avalanche model which allows for voltage-triggering. This model captures the periodicity and waveshape of the oscillations as well as several other key features. Importantly, our modeling shows that while temperature plays a critical role in the vanadium dioxide phase transition, electrically induced heating cannot act as the primary instigator of the oscillations in this configuration. This realization leads us to identify electric field as the most likely candidate for driving the phase transition.

preprint2011arXiv

Reconfigurable Gradient Index using VO2 Memory Metamaterials

We demonstrate tuning of a metamaterial device that incorporates a form of spatial gradient control. Electrical tuning of the metamaterial is achieved through a vanadium dioxide layer which interacts with an array of split ring resonators. We achieved a spatial gradient in the magnitude of permittivity, writeable using a single transient electrical pulse. This induced gradient in our device is observed on spatial sc ales on the order of one wavelength at 1 THz. Thus, we show the viability of elements for use in future devices with potential applications in beamforming and communications

preprint2009arXiv

Phase-transition driven memristive system

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena.