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Hyun-Tak Kim

Hyun-Tak Kim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-concond-mat.otherphysics.optics

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Published work

19 published item(s)

preprint2022arXiv

Identifying diverging-effective mass in MOSFET and $^3$He systems

Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass near Mott insulators was measured in strongly correlated Mott systems such as a fermion $^3$He and a Si metal-oxide-semiconductor-field-effect transistor, and is closely fitted by the effective mass obtained by the extension of the Brinkman-Rice(BR) picture, $m^*/m=1/[1-(U/U_c)^2]=1/(1-κ^2_{BR}ρ^4)$ when $κ^2_{BR}{\approx}1({\neq}$1), where $0<U/U_c=κ_{BR}ρ^2<1$, correlation strength is $κ_{BR}$, band-filling is $ρ$. Its identification is a percolation of a constant mass in the Brinkman-Rice picture. Over $κ_{BR}{\approx}0.96$ is evaluated.

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preprint2021arXiv

Mott switching and structural transition in the metal phase of $VO_2$ nanodomain

$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition or a Peierls transition. This complication is caused by metal and insulator coexistence, which is an inherent property of the IMT region. Thus, the acquired data in the IMT region are averaged over the two phases in many experiments. We overcome the issue by probing the electronic state of the monoclinic structure and by introducing a model that accounts for the coexisting phases. We reveal the Mott IMT in the non-distorted monoclinic nanodomain between $55-63^oC$, and the distortion-assisted SPT above $60^oC$.

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preprint2020arXiv

Fallacies on pairing symmetry and intrinsic electronic Raman spectrum in high-Tc cuprate superconductors

Certain significant fallacies are involved in discussions of the high-Tc mechanism unsolved for over 30 years in cuprate superconductors. These fallacies are explored with the aim of unravelling this mechanism. Moreover, using polarised electronic Raman scattering in inhomogeneous underdoped cuprate superconductors, the intrinsic nonlinear Raman spectrum is obtained by subtracting the pseudogap characteristic of a nonlinear from the linear Raman spectrum measured in the B2g mode of the node area below the critical temperature. The intrinsic nonlinear behaviour implies the existence of the nodal superconducting gap denying dx2-y2-wave pairing symmetry. An origin of the nodal superconducting gap is discussed.

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preprint2016arXiv

Direct observation of the M2 phase with its Mott transition in a VO$_2$ film

In VO$_2$, the explicit origin of the insulator-to-metal transition is still disputable between Peierls and Mott insulators. Along with the controversy, its second monoclinic (M2) phase has received considerable attention due to the presence of electron correlation in undimerized vanadium ions. However, the origin of the M2 phase is still obscure. Here, we study a granular VO$_2$ film using conductive atomic force microscopy and Raman scattering. Upon the structural transition from monoclinic to rutile, we observe directly an intermediate state showing the coexistence of monoclinic M1 and M2 phases. The conductivity near the grain boundary in this regime is six times larger than that of the grain core, producing a donut-like landscape. Our results reveal an intra-grain percolation process, indicating that VO$_2$ with the M2 phase is a Mott insulator.

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preprint2015arXiv

Phase transition in bulk single crystals and thin films of VO2 by nano-infrared spectroscopy and imaging

We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20 nm), we show that epitaxial strain in VO2 thin films not only triggers spontaneous local phase separations but also leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain and symmetry dependent mesoscopic phase inhomogeneity are also discussed. These results set the stage for a comprehensive understanding of complex energy landscapes that may not be readily determined by macroscopic approaches.

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preprint2012arXiv

Terahertz nano antenna enabled early transition in VO2

We study terahertz transmission through nano-patterned vanadium dioxide thin film. It is found that the patterning allows the lowering of the apparent transition temperature. For the case of the smallest width nano antennas, the transition temperature is lower by as many as ten degrees relative to the bare film, so that the nano patterned hysteresis curves completely separate themselves from their bare film counterparts. This early transition comes from the one order of magnitude enhanced effective dielectric constants by nano antennas. This phenomenon opens up the possibility of transition temperature engineering.

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preprint2011arXiv

Current oscillations in Vanadium Dioxide: evidence for electrically triggered percolation avalanches

In this work, we experimentally and theoretically explore voltage controlled oscillations occurring in micro-beams of vanadium dioxide. These oscillations are a result of the reversible insulator to metal phase transition in vanadium dioxide. Examining the structure of the observed oscillations in detail, we propose a modified percolative-avalanche model which allows for voltage-triggering. This model captures the periodicity and waveshape of the oscillations as well as several other key features. Importantly, our modeling shows that while temperature plays a critical role in the vanadium dioxide phase transition, electrically induced heating cannot act as the primary instigator of the oscillations in this configuration. This realization leads us to identify electric field as the most likely candidate for driving the phase transition.

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preprint2011arXiv

Nanoscale imaging of the electronic and structural transitions in vanadium dioxide

We investigate the electronic and structural changes at the nanoscale in vanadium dioxide (VO2) in the vicinity of its thermally driven phase transition. Both electronic and structural changes exhibit phase coexistence leading to percolation. In addition, we observe a dichotomy between the local electronic and structural transitions. Nanoscale x-ray diffraction reveals local, non-monotonic switching of the lattice structure, a phenomenon that is not seen in the electronic insulator-to-metal transition mapped by near-field infrared microscopy.

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preprint2011arXiv

Reconfigurable Gradient Index using VO2 Memory Metamaterials

We demonstrate tuning of a metamaterial device that incorporates a form of spatial gradient control. Electrical tuning of the metamaterial is achieved through a vanadium dioxide layer which interacts with an array of split ring resonators. We achieved a spatial gradient in the magnitude of permittivity, writeable using a single transient electrical pulse. This induced gradient in our device is observed on spatial sc ales on the order of one wavelength at 1 THz. Thus, we show the viability of elements for use in future devices with potential applications in beamforming and communications

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preprint2010arXiv

Memory Metamaterials

The resonant elements that grant metamaterials their unique properties have the fundamental limitation of restricting their useable frequency bandwidth. The development of frequency-agile metamaterials has helped to alleviate these bandwidth restrictions by allowing real-time tuning of the metamaterial frequency response. We demonstrate electrically-controlled persistent frequency tuning of a metamaterial, allowing lasting modification of its response using a transient stimulus. This work demonstrates a form of memory capacitance which interfaces metamaterials with a class of devices known collectively as memory devices.

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preprint2009arXiv

Phase-transition driven memristive system

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena.

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preprint2006arXiv

Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis

In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 THz and 6.0 THz indicating the rutile metal phase of VO_2 does not occur simultaneously with the first-order metal-insulator transition (MIT) near 68^oC. The monoclinic and correlated metal(MCM) phase between the MIT and the structural phase transition (SPT) is generated by a photo-assisted hole excitation which is evidence of the Mott transition. The SPT between the MCM phase and the rutile metal phase occurs due to subsequent Joule heating. The MCM phase can be regarded as an intermediate non-equilibrium state.

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preprint2006arXiv

Synthesis of VO_2 Nanowire and Observation of the Metal-Insulator Transition

We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the one-dimensional property. The temperature coefficient of resistance in the semiconducting nanowire is 7.06 %/K at 300 K, which is higher than that of commercial bolometer.

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preprint2006arXiv

Temperature dependence of Mott transition in VO_2 and programmable critical temperature sensor

The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied voltages, the transition temperature of the MIT current jump decreases. We find a monoclinic and electronically correlated metal (MCM) phase between the abrupt current jump and the structural phase transition (SPT). After the transition from insulator to metal, a linear increase in current (or conductivity) is shown with temperature until the current becomes a constant maximum value above T_{SPT}=68^oC. The SPT is confirmed by micro-Raman spectroscopy measurements. Optical microscopy analysis reveals the absence of the local current path in micro scale in the VO_2 device. The current uniformly flows throughout the surface of the VO_2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor.

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preprint2004arXiv

Observation of First-Order Metal-Insulator Transition without Structural Phase Transition in VO_2

An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator VO_2 based two-terminal device. An abrupt current jump is measured at a critical electric field. The Raman-shift frequency and the bandwidth of the most predominant Raman-active A_g mode, excited by the electric field, do not change through the abrupt MIT, while, they, excited by temperature, pronouncedly soften and damp (structural MIT), respectively. This structural MIT is found to occur secondarily.

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preprint2003arXiv

Explanation of small I_cR_n values observed in inhomogeneous superconductors

For an inhomogeneous high-Tc superconductor, band-filling dependence of Josephson I_cR_n product is deduced at T=0 K by means of measurement; this is an extension of the Ambegaokar - Baratoff (AB) theory based on the s-wave theory. The product is given by J_{obs}R_n ={1.57}{rho}{Gap_i}={rho}J_iR_n, where 0<{rho}<=1 is band filling (or local density), and {Gap_i} is the intrinsic superconducting true gap and small. When {rho}=1, J_{obs}R_n=J_iR_n is the intrinsic Josephson true product (or the AB product), where J_i is the intrinsic Josephson true current occurring by Cooper pair. When 0<{rho}<1, J_{obs}R_n is an average of J_iR_n over the measurement region and is the effect of measurement. The J_{obs}R_n explains small I_cR_n values observed by experiments. Furthermore, the intrinsic gap, 8.5<{Gap_i}<17 meV, is analyzed from I_cR_n data of Bi-2212. d-wave superconductive components do not exist in Bi-2212 crystals.

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preprint2002arXiv

Paramagnetic Meissner Effect in Superconducting Single Crystals of Ba_{1-x}K_xBiO_3

The paramagnetic Meissner effect (PME) in the field cooled susceptibility has been observed in superconducting single crystals of Ba_{1-x}K_xBiO_3 using magnetometers of Quantum-Design Co.. The PME is similar to that observed in cuprates and Nb superconductors. For the Ba_{0.63}K_{0.37}BiO_3 crystal, the PME is observed in cooling process under the field up to 750 Oe. The PME was not found in the virgin-charged superconducting magnet. The PME is found in a superconductor with trapped flux and may arise from a remnant field, a temperature inhomogeneity near T_c, and a potassium-concentration inhomogeneity.

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preprint2001arXiv

Extension of the Brinkman-Rice picture and the Mott transition

In order to explain the metal-Mott-insulator transition, the Brinkman-Rice (BR) picture is extended. In the case of less than one as well as one electron per atom, the on-site Coulomb repulsion is given by U={kappa}{rho}^2U_c by averaging the electron charge per atom over all atomic sites, where {kappa} is the correlation strength of U, {rho} is the band filling factor, and U_c is the critical on-site Coulomb energy. The effective mass of a quasiparticle is found to be m*/m=1/{1-{kappa}^2{rho}^4} for 0<{kappa}{rho}^2<1 and seems to follow the heat capacity data of Sr_{1-x}La_xTiO_3 and YBa_2Cu_3O_{7-delta} at {kappa}=1 and 0<{kappa}{rho}^2<1. The Mott transition of the first order occurs at {kappa}{rho}^2=1 and a band-type metal-insulator transition takes place at {kappa}{rho}^2=0. This Mott transition is compared with that in the d=infinity Hubbard model. The effective mass for 2D-DOS instead of the vHs can be used for the mechanism of high T_c superconductivity.

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preprint2000arXiv

Observation of a linear temperature dependence of the critical current density in a Ba_{0.63}K_{0.37}BiO_3 single crystal

For a Ba_{0.63}K_{0.37}BiO_3 single crystal with T_c=31 K, H_{c1}=750 Oe at 5 K, and dimensions 3x3x1 mm^3, the temperature and field dependences of magnetic hysteresis loops have been measured within 5-25 K in magnetic fields up to 6 Tesla. The critical current density is J_c(0)=1.5 x 10^5 A/cm^2 at zero field and 1 x 10^5 A/cm^2 at 1 kOe at 5 K. J_c decreases exponentially with increasing field up to 10 kOe. A linear temperature dependence of J_c is observed below 25 K, which differs from the exponential and the power-law temperature dependences in high-Tc superconductors including the BKBO. The linear temperature dependence can be regarded as an intrinsic effect in superconductors.

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