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Researcher profile

Byung-Gyu Chae

Byung-Gyu Chae contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

4 published item(s)

preprint2010arXiv

Memory Metamaterials

The resonant elements that grant metamaterials their unique properties have the fundamental limitation of restricting their useable frequency bandwidth. The development of frequency-agile metamaterials has helped to alleviate these bandwidth restrictions by allowing real-time tuning of the metamaterial frequency response. We demonstrate electrically-controlled persistent frequency tuning of a metamaterial, allowing lasting modification of its response using a transient stimulus. This work demonstrates a form of memory capacitance which interfaces metamaterials with a class of devices known collectively as memory devices.

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preprint2009arXiv

Phase-transition driven memristive system

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena.

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preprint2006arXiv

Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis

In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 THz and 6.0 THz indicating the rutile metal phase of VO_2 does not occur simultaneously with the first-order metal-insulator transition (MIT) near 68^oC. The monoclinic and correlated metal(MCM) phase between the MIT and the structural phase transition (SPT) is generated by a photo-assisted hole excitation which is evidence of the Mott transition. The SPT between the MCM phase and the rutile metal phase occurs due to subsequent Joule heating. The MCM phase can be regarded as an intermediate non-equilibrium state.

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preprint2006arXiv

Temperature dependence of Mott transition in VO_2 and programmable critical temperature sensor

The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied voltages, the transition temperature of the MIT current jump decreases. We find a monoclinic and electronically correlated metal (MCM) phase between the abrupt current jump and the structural phase transition (SPT). After the transition from insulator to metal, a linear increase in current (or conductivity) is shown with temperature until the current becomes a constant maximum value above T_{SPT}=68^oC. The SPT is confirmed by micro-Raman spectroscopy measurements. Optical microscopy analysis reveals the absence of the local current path in micro scale in the VO_2 device. The current uniformly flows throughout the surface of the VO_2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor.

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