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Source author record

Huixia Fu

Huixia Fu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.app-ph

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Published work

6 published item(s)

preprint2019arXiv

Band inversion and topology of the bulk electronic structure in FeSe${}_{0.45}$Te${}_{0.55}$

FeSe${}_{0.45}$Te${}_{0.55}$ (FeSeTe) has recently emerged as a promising candidate to host topological superconductivity, with a Dirac surface state and signatures of Majorana bound states in vortex cores. However, correlations strongly renormalize the bands compared to electronic structure calculations, and there is no evidence for the expected bulk band inversion. We present here a comprehensive angle resolved photoemission (ARPES) study of FeSeTe as function of photon energies ranging from 15 - 100 eV. We find that although the top of bulk valence band shows essentially no $k_z$ dispersion, its normalized intensity exhibits a periodic variation with $k_z$. We show, using ARPES selection rules, that the intensity oscillation is a signature of band inversion indicating a change in the parity going from $Γ$ to Z. Thus we provide the first direct evidence for a topologically non-trivial bulk band structure that supports protected surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure

The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. To realize this proposal, it is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus the quantized Hall resistance can only be achieved at the magnetic field above 6 T. In this work, we propose to induce out-of-plane surface magnetism of MnBi2Te4 films via the magnetic proximity with magnetic insulator CrI3. Our calculations have revealed a strong exchange bias ~ 40 meV, originating from the long Cr-eg orbital tails that hybridize strongly with Te p-orbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi2Te4/CrI3 heterostructure. Our calculations also demonstrate the high Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi2Te4/CrI3 heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.

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preprint2019arXiv

Finite-temperature violation of the anomalous transverse Wiedemann-Franz law

The Wiedemann-Franz (WF) law links the ratio of electronic charge and heat conductivity to fundamental constants. It has been tested in numerous solids, but the extent of its relevance to the anomalous transverse transport, which represents the topological nature of the wave function, remains an open question. Here we present a study of anomalous transverse response in the noncollinear antiferromagnet Mn$_{3}$Ge extended from room temperature down to sub-Kelvin temperature and find that the anomalous Lorenz ratio remains close to the Sommerfeld value up to 100 K, but not above. The finite-temperature violation of the WF correlation is caused by a mismatch between the thermal and electrical summations of the Berry curvature, rather than the inelastic scattering as observed in ordinary metals. This interpretation is backed by our theoretical calculations, which reveals a competition between the temperature and the Berry curvature distribution. The accuracy of the experiment is supported by the verification of the Bridgman relation between the anomalous Ettingshausen and Nernst effects. Our results identify the anomalous Lorenz ratio as an extremely sensitive probe of Berry spectrum near the chemical potential.

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preprint2019arXiv

Observation of Spin Hall Effect in Weyl Semimetal WTe2 at Room Temperature

Discovery of topological Weyl semimetals has revealed the opportunities to realize several extraordinary physical phenomena in condensed matter physics. Specifically, these semimetals with strong spin-orbit coupling, broken inversion symmetry and novel spin texture are predicted to exhibit a large spin Hall effect that can efficiently convert the charge current to a spin current. Here we report the direct experimental observation of a large spin Hall and inverse spin Hall effects in Weyl semimetal WTe2 at room temperature obeying Onsager reciprocity relation. We demonstrate the detection of the pure spin current generated by spin Hall phenomenon in WTe2 by making van der Waals heterostructures with graphene, taking advantage of its long spin coherence length and spin transmission at the heterostructure interface. These experimental findings well supported by ab initio calculations show a large charge-spin conversion efficiency in WTe2; which can pave the way for utilization of spin-orbit induced phenomena in spintronic memory and logic circuit architectures.

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preprint2016arXiv

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface

Emergence of ferromagnetism in non-magnetic semiconductors is strongly desirable, especially in topological materials thanks to the possibility to achieve quantum anomalous Hall effect. Based on first-principles calculations, we propose that for Si thin film grown on metal substrate, the pristine Si(111)-root3xroot3 surface with a spontaneous weak reconstruction has a strong tendency of ferromagnetism and nontrivial topological properties, characterized by spin polarized Dirac-fermion surface states. In contrast to conventional routes relying on introduction of alien charge carriers or specially patterned substrates, the spontaneous magnetic order and spin-orbit coupling on the pristine silicon surface together gives rise to quantized anomalous Hall effect with a finite Chern number C=-1. This work suggests exciting opportunities in silicon-based spintronics and quantum computing free from alien dopants or proximity effects.

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preprint2015arXiv

From Silicene to Half-Silicane by Hydrogenation

Graphane is graphene fully hydrogenated from both sides, forming a 1x1 structure, where all C atoms are in sp3 configuration. In silicene, the Si atoms are in a mix-sp2/sp3 configuration, it is therefore natural to imagine silicane in analogue to graphane. However, monoatomic silicene sheet grown on substrates generally reconstructs into different phases, and only partially hydrogenated silicene with reconstructions had been reported before. In this report we produce half-silicane, where one Si sublattice is fully H-saturated and the other sublattice is intact, forming a perfect 1x1 structure. By hydrogenating various silicene phases on Ag(111) substrate, we found that only the (2r3x2r3)R30° phase can produce half-silicane. Interestingly, this phase was previous considered to be a highly defective or incomplete silicene structure. Our results indicate that the structure of (2r3x2r3)R30° phase involves a complete silicene-1x1 lattice instead of defective fragments, and the formation mechanism of half-silicane was discussed with the help of first principles calculations.

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