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Huimei Liu

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Published work

8 published item(s)

preprint2022arXiv

Exchange interactions in $d^{5}$ Kitaev materials: From Na$_2$IrO$_3$ to $α$-RuCl$_3$

We present an analytical study of the exchange interactions between pseudospin one-half $d^{5}$ ions in honeycomb lattices with edge-shared octahedra. Various exchange channels involving Hubbard U, charge-transfer excitations, and cyclic exchange are considered. Hoppings within $t_{2g}$ orbitals as well as between $t_{2g}$ and $e_g$ orbitals are included. Special attention is paid to the trigonal crystal field $Δ$ effects on the exchange parameters. The obtained exchange Hamiltonian is dominated by ferromagnetic Kitaev interaction K within a wide range of $Δ$. It is found that a parameter region close to the charge-transfer insulator regime and with a small $Δ$ is most promising to realize the Kitaev spin liquid phase. Two representative honeycomb materials Na$_2$IrO$_3$ and $α$-RuCl$_3$ are discussed based on our theory. We have found that both materials share dominant ferromagnetic K and positive non-diagonal $Γ$ values. However, their Heisenberg J terms have opposite signs: AFM J>0 in Na$_2$IrO$_3$ and FM J<0 in $α$-RuCl$_3$. This brings different magnetic fluctuations and results in their different magnetization behaviors and spin excitation spectra. Proximity to FM state due to the large FM J is emphasized in $α$-RuCl$_3$. The differences between the exchange couplings of these two materials originate from the opposite $Δ$ values, indicating that the crystal field can serve as an efficient control parameter to tune the magnetic properties of $d^{5}$ spin-orbit Mott insulators.

preprint2020arXiv

Kitaev Spin Liquid in 3d Transition Metal Compounds

We study the exchange interactions and resulting magnetic phases in the honeycomb cobaltates. For a broad range of trigonal crystal fields acting on Co2+ ions, the low-energy pseudospin-1/2 Hamiltonian is dominated by bond-dependent Ising couplings that constitute the Kitaev model. The non-Kitaev terms nearly vanish at small values of trigonal field Δ, resulting in spin liquid ground state. Considering Na3Co2SbO6 as an example, we find that this compound is proximate to a Kitaev spin liquid phase, and can be driven into it by slightly reducing Δby \sim 20 meV, e.g., via strain or pressure control. We argue that due to the more localized nature of the magnetic electrons in 3d compounds, cobaltates offer the most promising search area for Kitaev model physics.

preprint2016arXiv

Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2

The progress in exploiting new electronic materials and devices has been a major driving force in solid-state physics. As a new state of matter, a Weyl semimetal (WSM), particularly a type-II WSM, hosts Weyl fermions as emergent quasiparticles and may harbor novel electrical transport properties because of the exotic Fermi surface. Nevertheless, such a type-II WSM material has not been experimentally observed in nature. In this work, by performing systematic magneto-transport studies on thin films of a predicted material candidate WTe2, we observe notable angle-sensitive (between the electric and magnetic fields) negative longitudinal magnetoresistance (MR), which can likely be attributed to the chiral anomaly in WSM. This phenomenon also exhibits strong planar orientation dependence with the absence of negative longitudinal MR along the tungsten chains (a axis), which is consistent with the distinctive feature of a type-II WSM. By applying a gate voltage, we demonstrate that the Fermi energy can be tuned through the Weyl points via the electric field effect; this is the first report of controlling the unique transport properties in situ in a WSM system. Our results have important implications for investigating simulated quantum field theory in solid-state systems and may open opportunities for implementing new types of electronic applications, such as field-effect chiral electronic devices.

preprint2016arXiv

La1-xBi1+xS3 (x~0.08): An n-Type Semiconductor

The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and $β$ = 118.493(5)°. The structure of La0.92Bi1.08S3 is built up of NaCl-type Bi2S5 blocks, and BiS4 and LaS5 infinitely long chains forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ~ 1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.

preprint2015arXiv

Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here, we present atomically thin rhenium disulfide (ReS2) flakes with a unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated mono- and few-layer ReS2 field effect transistors (FETs), which exhibit competitive performance with large current on/off ratios (~107) and low subthreshold swings (100 mV dec-1). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known 2D semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic FETs, suggesting the promising implementation of large-scale 2D logic circuits. Our results underscore the unique properties of 2D semiconducting materials with low crystal symmetry for future electronic applications.

preprint2015arXiv

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride

Tungsten ditelluride has attracted intense research interest due to the recent discovery of its large unsaturated magnetoresistance up to 60 Tesla. Motivated by the presence of a small, sensitive Fermi surface of 5d electronic orbitals, we boost the electronic properties by applying a high pressure, and introduce superconductivity successfully. Superconductivity sharply appears at a pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of 7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasing pressure, thereby exhibiting the typical dome-shaped superconducting phase. From theoretical calculations, we interpret the low-pressure region of the superconducting dome to an enrichment of the density of states at the Fermi level and attribute the high-pressure decrease in Tc to possible structural instability. Thus, Tungsten ditelluride may provide a new platform for our understanding of superconductivity phenomena in transition metal dichalcogenides.

preprint2015arXiv

Robust linear magnetoresistance in WTe2

Unsaturated magnetoresistance (MR) has been reported in WTe2, and remains irrepressible up to very high field. Intense optimization of the crystalline quality causes a squarely-increasing MR, as interpreted by perfect compensation of opposite carriers. Herein we report our observation of linear MR (LMR) in WTe2 crystals, the onset of which is first identified by constructing the mobility spectra of the MR at low fields. The LMR further intensifies and predominates at fields higher than 20 Tesla while the parabolic MR gradually decays. The LMR remains unsaturated up to a high field of 60 Tesla and persists, even at a high pressure of 6.2 GPa. Assisted by density functional theory calculations and detailed mobility spectra, we find the LMR to be robust against the applications of high field, broken carrier balance, and mobility suppression. Angle-resolved photoemission spectroscopy reveals a unique quasilinear energy dispersion near the Fermi level. Our results suggest that the robust LMR is the low bound of the unsaturated MR in WTe2.

preprint2014arXiv

Tunable Magnetic Semiconductor Behavior Driven by Half-Filled One Dimensional Band in Zigzag Phosphorene Nanoribbons

An antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from a comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them great potential for the applications in nanoelectronic devices.