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Hugo Aramberri

Hugo Aramberri appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

7 published item(s)

preprint2021arXiv

Ferroelectric/paraelectric superlattices for energy storage

The polarization response of antiferroelectrics to electric fields is such that the materials can store large energy densities, which makes them promising candidates for energy storage applications in pulsed-power technologies. However, relatively few materials of this kind are known. Here we consider ferroelectric/paraelectric superlattices as artificial electrostatically-engineered antiferroelectrics. Specifically, using high-throughput second-principles calculations, we engineer PbTiO$_{3}$/SrTiO$_{3}$ superlattices to optimize their energy-storage performance at room temperature (to maximize density and release efficiency) with respect to different design variables (layer thicknesses, epitaxial conditions, stiffness of the dielectric layer). We obtain results competitive with the state-of-the-art antiferroelectric capacitors and reveal the mechanisms responsible for the optimal properties.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Piezoelectricity in hafnia

Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO$_2$ thin films using piezoresponse force microscopy. Further,the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of dopant ordering on the stability of ferroelectric hafnia

Films of all-important compound hafnia (HfO2) can be prepared in an orthorhombic ferroelectric (FE) state that is ideal for applications, e.g. in memories or negative-capacitance field-effect transistors. The origin of this FE state remains a mystery, though, as none of the proposed mechanisms for its stabilization -- from surface and size effects to formation kinetics -- is fully convincing. Interestingly, it is known that doping HfO2 with various cations favors the occurrence of the FE polymorph; however, existing first-principles works suggest that doping by itself is not sufficient to stabilize the polar phase over the usual non-polar monoclinic ground state. Here we use first-principles methods to reexamine this question. We consider two representative isovalent substitutional dopants, Si and Zr, and study their preferred arrangement within the HfO2 lattice. Our results reveal that small atoms like Si can adopt very stable configurations (forming layers within specific crystallographic planes) in the FE orthorhombic phase of HfO2, but comparatively less so in the non-polar monoclinic one. Further, we find that, at low concentrations, such a dopant ordering yields a FE ground state, the usual paraelectric phase becoming a higher-energy metastable polymorph. We discuss the implications of our findings, which constitute a definite step forward towards understanding ferroelectricity in HfO2.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Noncollinear Magnetic Modulation of Weyl Nodes in Ferrimagnetic Mn$_3$Ga

The tetragonal ferrimagnetic Mn$_3$Ga exhibits a wide range of intriguing magnetic properties. Here, we report the emergence of topologically nontrivial nodal lines in the absence of spin orbit coupling (SOC) which are protected by both mirror and $C_{4z}$ rotational symmetries. In the presence of SOC we demonstrate that the doubly degenerate nontrivial crossing points evolve into $C_{4z}$-protected Weyl nodes with chiral charge of $\pm$2. Furthermore, we have considered the experimentally reported noncollinear ferrimagnetic structure, where the magnetic moment of the Mn$_I$ atom (on the Mn-Ga plane) is tilted by an angle $θ$ with respect to the crystallographic $c$ axis. The evolution of the Weyl nodes with $θ$ reveals that the double Weyl nodes split into a pair of charge-1 Weyl nodes whose separation can be tuned by the magnetic orientation in the noncollinear ferrimagnetic structure.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Archetypal soft-mode driven antipolar transition in francisite Cu3Bi(SeO3)2O2Cl

Model materials are precious test cases for elementary theories and provide building blocks for the understanding of more complex cases. Here, we describe the lattice dynamics of the structural phase transition in francisite Cu3Bi(SeO3)2O2Cl at 115 K and show that it provides a rare archetype of a transition driven by a soft antipolar phonon mode. In the high-symmetry phase at hightemperatures, the soft mode is found at (0,0,0.5) at the Brillouin zone boundary and is measured by inelastic X-ray scattering and thermal diffuse scattering. In the low-symmetry phase, this softmode is folded back onto the center of the Brillouin zone as a result of the doubling of the unit cell, and appears as a fully symmetric mode that can be tracked by Raman spectroscopy. On both sides of the transition, the mode energy squared follows a linear behaviour over a large temperature range. First-principles calculations reveal that, surprisingly, the flat phonon band calculated for the high-symmetry phase seems incompatible with the displacive character found experimentally. We discuss this unusual behavior in the context of an ideal Kittel model of an antiferroelectric transition.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Termination Dependent Topological Surface States in Nodal Loop Semimetal HfP2

Symmetry plays a major role in all disciplines of physics. Within the field of topological materials there is a great interest in understanding how the mechanics of crystalline and internal symmetries protect crossings between the conduction and valence bands. Additionally, exploring this direction can lead to a deeper understanding on the topological properties of crystals hosting a variety of symmetries. For the first time, we report the experimental observation of topological surface states in the nodal loop semimetal HfP2 using angle resolved photoemission spectroscopy (ARPES) which is supported by our first principles calculations. Our study shows termination dependent surface states in this compound. Our experimental data reveal surface states linked to three unique nodal loops confirmed by theoretical calculation to be topologically non-trivial. This work demonstrates that transition metal dipnictides provide a good platform to study non-trivial topological states protected by nonsymmorphic symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Proposal for an ac spin current source

We propose an ac current source that can be tuned from a pure charge to a pure spin current source. The device consists of two mesoscopic capacitors attached to a two-dimensional strip of a topological insulator. The change from charge to spin current is controlled by an offset in the top gate potentials that drive the capacitors. In addition to this setup, which anticipates the experimental realisation of quantum point contacts in topological insulators, we propose an analogous source in the quantum Hall regime which only relies on presently available building blocks. To this end, we calculate the band structure of a topological insulator in a magnetic field. The intrinsic spin-orbit coupling, together with a split gate, allows for an analogous source, where charge and spin current can be manipulated. The realisation of the device as well as the detection of the ac spin current are within reach of present experimental technology.

0 citations0 reviewsNo code linkedOpen access