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Researcher profile

Jorge Íñiguez

Jorge Íñiguez contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-ph

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Published work

5 published item(s)

preprint2021arXiv

Ferroelectric/paraelectric superlattices for energy storage

The polarization response of antiferroelectrics to electric fields is such that the materials can store large energy densities, which makes them promising candidates for energy storage applications in pulsed-power technologies. However, relatively few materials of this kind are known. Here we consider ferroelectric/paraelectric superlattices as artificial electrostatically-engineered antiferroelectrics. Specifically, using high-throughput second-principles calculations, we engineer PbTiO$_{3}$/SrTiO$_{3}$ superlattices to optimize their energy-storage performance at room temperature (to maximize density and release efficiency) with respect to different design variables (layer thicknesses, epitaxial conditions, stiffness of the dielectric layer). We obtain results competitive with the state-of-the-art antiferroelectric capacitors and reveal the mechanisms responsible for the optimal properties.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Piezoelectricity in hafnia

Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO$_2$ thin films using piezoresponse force microscopy. Further,the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of dopant ordering on the stability of ferroelectric hafnia

Films of all-important compound hafnia (HfO2) can be prepared in an orthorhombic ferroelectric (FE) state that is ideal for applications, e.g. in memories or negative-capacitance field-effect transistors. The origin of this FE state remains a mystery, though, as none of the proposed mechanisms for its stabilization -- from surface and size effects to formation kinetics -- is fully convincing. Interestingly, it is known that doping HfO2 with various cations favors the occurrence of the FE polymorph; however, existing first-principles works suggest that doping by itself is not sufficient to stabilize the polar phase over the usual non-polar monoclinic ground state. Here we use first-principles methods to reexamine this question. We consider two representative isovalent substitutional dopants, Si and Zr, and study their preferred arrangement within the HfO2 lattice. Our results reveal that small atoms like Si can adopt very stable configurations (forming layers within specific crystallographic planes) in the FE orthorhombic phase of HfO2, but comparatively less so in the non-polar monoclinic one. Further, we find that, at low concentrations, such a dopant ordering yields a FE ground state, the usual paraelectric phase becoming a higher-energy metastable polymorph. We discuss the implications of our findings, which constitute a definite step forward towards understanding ferroelectricity in HfO2.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Anisotropy-driven thermal conductivity switching and thermal hysteresis in a ferroelectric

We present a theoretical proposal for the design of a thermal switch based on the anisotropy of the thermal conductivity of PbTiO3 and of the possibility to rotate the ferroelectric polarization with an external electric field. Our calculations are based on an iterative solution of the phonon Boltzmann Transport Equation and rely on interatomic force constants computed within an efficient second-principles density functional theory scheme. We also characterize the hysteresis cycle of the thermal conductivity in presence of an applied electric field and show that the response time would be limited by speed of the ferroelectric switch itself and thus can operate in the high-frequency regime.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Archetypal soft-mode driven antipolar transition in francisite Cu3Bi(SeO3)2O2Cl

Model materials are precious test cases for elementary theories and provide building blocks for the understanding of more complex cases. Here, we describe the lattice dynamics of the structural phase transition in francisite Cu3Bi(SeO3)2O2Cl at 115 K and show that it provides a rare archetype of a transition driven by a soft antipolar phonon mode. In the high-symmetry phase at hightemperatures, the soft mode is found at (0,0,0.5) at the Brillouin zone boundary and is measured by inelastic X-ray scattering and thermal diffuse scattering. In the low-symmetry phase, this softmode is folded back onto the center of the Brillouin zone as a result of the doubling of the unit cell, and appears as a fully symmetric mode that can be tracked by Raman spectroscopy. On both sides of the transition, the mode energy squared follows a linear behaviour over a large temperature range. First-principles calculations reveal that, surprisingly, the flat phonon band calculated for the high-symmetry phase seems incompatible with the displacive character found experimentally. We discuss this unusual behavior in the context of an ideal Kittel model of an antiferroelectric transition.

0 citations0 reviewsNo code linkedOpen access