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Hoon Ryu

Hoon Ryu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallphysics.comp-phcond-mat.mtrl-sciquant-phphysics.optics

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Published work

8 published item(s)

preprint2022arXiv

Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls

The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omni-present in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a silicon-germanium heterostructure whose confinement is manipulated with electrical biases imposed on top electrodes, we computationally explore the noise-robustness of 2-qubit entangling operations with a focus on the controlled-X (CNOT) logic that is essential for designs of gate-based universal quantum logic circuits. With device simulations based on the physics of bulk semiconductors augmented with electronic structure calculations, we not only quantify the degradation in fidelity of single-step CNOT operations with respect to the strength of charge noise, but also discuss a strategy of device engineering that can significantly enhance noise-robustness of CNOT operations with almost no sacrifice of speed compared to the single-step case. Details of device designs and controls that this work presents can establish a rare but practical guideline for potential efforts to secure silicon-based quantum processors using an electrode-driven quantum dot platform.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Atomistic and continuum modeling of a zincblende quantum dot heterostructure

A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obtained with a combination of atomistic strain and tight-binding (TB) electronic structure description for the confined quantum states in the QD, the TB calculation requires substantial computational resources. To alleviate this problem an integrated approach was adopted to compute the energy states from a continuum 8-band k.p Hamiltonian under the influence of an atomistic strain field. Such multi-scale simulations yield a roughly six-fold faster simulation. Atomic-resolution strain is added to the k.p Hamiltonian through interpolation onto a coarser continuum grid. Sufficient numerical accuracy is obtained by the multi-scale approach. Optical transition wavelengths are within 7% of the corresponding TB results with a proper splitting of p-type sub-bands. The systematically lower emission wavelengths in k.p are attributable to an underestimation of the coupling between the conduction and valence bands.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Feasibility, Accuracy and Performance of Contact Block Reduction method for multi-band simulations of ballistic quantum transport

Numerical utilities of the Contact Block Reduction (CBR) method in evaluating the retarded Green's function, are discussed for 3-D multi-band open systems that are represented by the atomic tight-binding (TB) and continuum k\cdotp (KP) band model. It is shown that the methodology to approximate solutions of open systems which has been already reported for the single-band effective mass model, cannot be directly used for atomic TB systems, since the use of a set of zincblende crystal grids makes the inter-coupling matrix be non-invertible. We derive and test an alternative with which the CBR method can be still practical in solving TB systems. This multi-band CBR method is validated by a proof of principles on small systems, and also shown to work excellent with the KP approach. Further detailed analysis on the accuracy, speed, and scalability on high performance computing clusters, is performed with respect to the reference results obtained by the state-of- the-art Recursive Green's Function and Wavefunction algorithm. This work shows that the CBR method could be particularly useful in calculating resonant tunneling features, but show a limited practicality in simulating field effect transistors (FETs) when the system is described with the atomic TB model. Coupled to the KP model, however, the utility of the CBR method can be extended to simulations of nanowire FETs.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations

Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explicitly in space with 15 million atom structures. An excited state spectroscopy technique is presented in which the externally applied electric field is swept to probe the ladder of the electronic energy levels (electron or hole) of one quantum dot through anti-crossings with the energy levels of the other quantum dot in a two quantum dot molecule. This technique can be applied to estimate the spatial electron-hole spacing inside the quantum dot molecule as well as to reverse engineer quantum dot geometry parameters such as the quantum dot separation. Crystal deformation induced piezoelectric effects have been discussed in the literature as minor perturbations lifting degeneracies of the electron excited (P and D) states, thus affecting polarization alignment of wave function lobes for III-V Heterostructures such as single InAs/GaAs quantum dots. In contrast this work demonstrates the crucial importance of piezoelectricity to resolve the symmetries and energies of the excited states through matching the experimentally measured spectrum in an InGaAs quantum dot molecule under the influence of an electric field. Both linear and quadratic piezoelectric effects are studied for the first time for a quantum dot molecule and demonstrated to be indeed important. The net piezoelectric contribution is found to be critical in determining the correct energy spectrum, which is in contrast to recent studies reporting vanishing net piezoelectric contributions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium

A highly phosphrous delta-doped Si device is modeled with a quantum well with periodic boundary conditions and the semi-empirical spds* tight-binding band model. Its temperature-dependent electronic properties are studied. To account for high doping density with many electrons, a highly parallelized self-consistent Schroedinger-Poisson solver is used with atomistic representations of multiple impurity ions. The band-structure in equilibrium and the corresponding Fermi-level position are computed for a selective set of temperatures. The result at room temperature is compared with previous studies and the temperature-dependent electronic properties are discussed further in detail with the calculated 3-D self-consistent potential profile.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Experimental and Theoretical Study of Polarization-dependent Optical Transitions from InAs Quantum Dots at Telecommunication-Wavelengths (1.3-1.5μm)

The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emission at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by using low growth rates, the incorporation of strain-reducing capping layers or growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also allows greater freedom in the choice of growth conditions for the upper layers, so that both a significant extension in their emission wavelength and an improved polarization response can be achieved due to modification of the QD size, strain and composition. In this paper we investigate the polarization behavior of single and stacked QD layers using room temperature sub-lasing-threshold electroluminescence and photovoltage measurements as well as atomistic modeling with the NEMO 3-D simulator. A reduction is observed in the ratio of the transverse electric (TE) to transverse magnetic (TM) optical mode response for a GaAs-capped QD stack compared to a single QD layer, but when the second layer of the two-layer stack is InGaAs-capped an increase in the TE/TM ratio is observed, in contrast to recent reports for single QD layers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers

Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum mechanical effects, an atomistic modeling approach needs to be pursued. The Nanoelectronic Modeling Tool (NEMO 3-D) has satisfied the requirement by including emprical $sp^{3}s^{*}$ and $sp^{3}d^{5}s^{*}$ tight binding models and considering strain to successfully simulate various semiconductor material systems. Computationally, however, NEMO 3-D needs significant improvements to utilize increasing supply of processors. This paper introduces the new modeling tool, OMEN 3-D, and discusses the major computational improvements, the 3-D domain decomposition and the multi-level parallelism. As a featured application, a full 3-D parallelized Schrödinger-Poisson solver and its application to calculate the bandstructure of $δ$ doped phosphorus(P) layer in silicon is demonstrated. Impurity bands due to the donor ion potentials are computed.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Moving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data

Low-loss optical communication requires light sources at 1.5um wavelengths. Experiments showed without much theoretical guidance that InAs/GaAs quantum dots (QDs) may be tuned to such wavelengths by adjusting the In fraction in an InxGa1-xAs strain-reducing capping layer (SRCL). In this work systematic multimillion atom electronic structure calculations qualitatively and quantitatively explain for the first time available experimental data. The NEMO 3-D simulations treat strain in a 15 million atom system and electronic structure in a subset of ~9 million atoms using the experimentally given nominal geometries and without any further parameter adjustments the simulations match the nonlinear behavior of experimental data very closely. With the match to experimental data and the availability of internal model quantities significant insight can be gained through mapping to reduced order models and their relative importance. We can also demonstrate that starting from simple models has in the past led to the wrong conclusions. The critical new insight presented here is that the QD changes its shape. The quantitative simulation agreement with experiment without any material or geometry parameter adjustment in a general atomistic tool leads us to believe that the era of nano Technology Computer Aided Design (nano-TCAD) is approaching. NEMO 3-D will be released on nanoHUB.org where the community can duplicate and expand on the results presented here through interactive simulations.

0 citations0 reviewsNo code linkedOpen access