BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Sunhee Lee

Sunhee Lee appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-phphysics.optics

Catalog footprint

What is connected

6works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2014arXiv

Atomistic and continuum modeling of a zincblende quantum dot heterostructure

A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obtained with a combination of atomistic strain and tight-binding (TB) electronic structure description for the confined quantum states in the QD, the TB calculation requires substantial computational resources. To alleviate this problem an integrated approach was adopted to compute the energy states from a continuum 8-band k.p Hamiltonian under the influence of an atomistic strain field. Such multi-scale simulations yield a roughly six-fold faster simulation. Atomic-resolution strain is added to the k.p Hamiltonian through interpolation onto a coarser continuum grid. Sufficient numerical accuracy is obtained by the multi-scale approach. Optical transition wavelengths are within 7% of the corresponding TB results with a proper splitting of p-type sub-bands. The systematically lower emission wavelengths in k.p are attributable to an underestimation of the coupling between the conduction and valence bands.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be used to understand the evolution of source-to-channel barrier height (Eb) and of active channel area (S) with gate bias (Vgs). The quantitative difference between experimental and theoretical values that we observe can be attributed to the interface traps present in these FinFETs. Therefore, based on the difference between measured and calculated values of (i) S and (ii) |dEb/dVgs| (channel to gate coupling), two new methods of interface trap density (Dit) metrology are outlined. These two methods are shown to be very consistent and reliable, thereby opening new ways of analyzing in situ state-of-the-art multi-gate FETs down to the few nm width limit. Furthermore, theoretical investigation of the spatial current density reveal volume inversion in thinner FinFETs near the threshold voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium

A highly phosphrous delta-doped Si device is modeled with a quantum well with periodic boundary conditions and the semi-empirical spds* tight-binding band model. Its temperature-dependent electronic properties are studied. To account for high doping density with many electrons, a highly parallelized self-consistent Schroedinger-Poisson solver is used with atomistic representations of multiple impurity ions. The band-structure in equilibrium and the corresponding Fermi-level position are computed for a selective set of temperatures. The result at room temperature is compared with previous studies and the temperature-dependent electronic properties are discussed further in detail with the calculated 3-D self-consistent potential profile.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs

The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods for interface trap density (Dit) measurements are not performed on ultimate devices, but on custom designed structures. We present the first set of methods that allow direct estimation of Dit in state-of-the-art FinFETs, addressing a critical industry need.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers

Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum mechanical effects, an atomistic modeling approach needs to be pursued. The Nanoelectronic Modeling Tool (NEMO 3-D) has satisfied the requirement by including emprical $sp^{3}s^{*}$ and $sp^{3}d^{5}s^{*}$ tight binding models and considering strain to successfully simulate various semiconductor material systems. Computationally, however, NEMO 3-D needs significant improvements to utilize increasing supply of processors. This paper introduces the new modeling tool, OMEN 3-D, and discusses the major computational improvements, the 3-D domain decomposition and the multi-level parallelism. As a featured application, a full 3-D parallelized Schrödinger-Poisson solver and its application to calculate the bandstructure of $δ$ doped phosphorus(P) layer in silicon is demonstrated. Impurity bands due to the donor ion potentials are computed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermionic Emission as a tool to study transport in undoped nFinFETs

Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The results of our experiments and of the Tight Binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of devices characteristics.

0 citations0 reviewsNo code linkedOpen access