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Hong Ma

Hong Ma appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elphysics.opticsPopulations and Evolutioncond-mat.mes-hallGenomicsgr-qcMolecular Networksphysics.ins-detQuantitative Methods

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Published work

8 published item(s)

preprint2022arXiv

Observation of Ultrafast Interfacial Exciton Formation and Recombination in Graphene/MoS2 Heterostructure

In this study,we combined time-resolved terahertz spectroscopy along with transient absorption spectroscopy to revisit the interlayer non-equilibrium carrier dynamics in largely lateral size Gr/MoS2 heterostructure fabricated with chemical vapor deposition method. Our experimental results reveal that, with photon-energy below the A-exciton of MoS2 monolayer, hot electrons transfer from graphene to MoS2 takes place in time scale of less than 0.5 ps, resulting in ultrafast formation of interfacial exciton in the heterostructure, subsequently, recombination relaxation of the interfacial exciton occurs in time scale of ~18 ps. A new model considering carrier heating and photogating effect in graphene is proposed to estimate the amount of carrier transfer in the heterostructure, which shows a good agreement with experimental result. Moreover, when the photon-energy is on-resonance with the A-exciton of MoS2, photogenerated holes in MoS2 are transferred to graphene layer within 0.5 ps, leading to the formation of interfacial exciton, the subsequent photoconductivity (PC) relaxation of graphene and bleaching recovery of A-exciton in MoS2 take place around ~10 ps time scale, ascribing to the interfacial exciton recombination. The faster recombination time of interfacial exciton with on-resonance excitation could come from the reduced interface barrier caused by bandgap renormalization effect. Our study provides deep insight into the understanding of interfacial charge transfer as well as the relaxation dynamics in graphene-based heterostructures, which are promising for the applications of graphene-based optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Temperature-driven Emergence of Negative Photoconductivity in Semimetal MoTe2 Film Probed with Terahertz Spectroscopy

Layered two-dimensional (2D) materials MoTe2 have been paid special attention due to the rich optoelectronic properties with various phases. The nonequilibrium carrier dynamics as well as its temperature dependence in MoTe2 are of prime importance, as it can shed light on understanding the anomalous optical response and potential applications in far infrared (IR) photodetection. Hereby, we employ time-resolved terahertz (THz) spectroscopy to study the temperature dependent nonequilibrium carrier dynamics in MoTe2 films. After photoexcitation of 1.59 eV, the 1T'-phase MoTe2 at high temperature behaves only THz positive photoconductivity (PPC) with relaxation time of less than 1 ps. In contrast, the Td-phase MoTe2 at low temperature shows ultrafast THz PPC initially followed by emerging THz negative photoconductivity (NPC), and the THz NPC signal relaxes to the equilibrium state in hundreds of ps time scale. Small polaron formation induced by hot carrier has been proposed to be ascribed to the THz NPC in the polar semimetal MoTe2 at low temperature. The polaron formation time after photoexcitation increases slightly with temperature, which is determined to be ~0.4 ps at 5 K and 0.5 ps at 100 K. Our experimental result demonstrates for the first time the dynamical formation of small poalron in MoTe2 Weyl semimetal, this is fundamental importance on the understanding the temperature dependent electron-phonon coupling and quantum phase transition, as well as the designing the MoTe2-based far IR photodetector.

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preprint2022arXiv

Ultrafast Dynamics of Defect-Assisted Auger process in PdSe2 films: Synergistic Interaction Between Defect Trapping and Auger Effect

Strong Coulomb interactions in two-dimensional systems, together with quantum confinement, make many-body processes particularly effective for carrier dynamics, which plays a crucial role in determining carrier lifetime, photoconductivity, and emission yield of the materials. Hereby, by using optical pump and terahertz probe spectroscopy, we have investigated the photocarrier dynamics in the PdSe2 films with different thickness. The experimental results reveal that the photocarrier relaxation consists of two components: a fast component of 2.5 ps that shows the layer-thickness independence, and a slow component has typical lifetime of 7.3 ps decreasing with the layer thickness. Surprisingly, the relaxation times for both fast and slow components are exhibited both pump fluence and temperature independence, which suggests that synergistic interactions between defect trapping and Auger effect dominate the photocarrier dynamics in PdSe2 films. A model involving defect-assisted Auger process is proposed, which can reproduce the experimental results well. The fitting results reveal that the layer dependent lifetime is determined by the defect density rather than carrier occupancy rate after photoexcitation. Our results underscore the interplay between Auger process and defects in two-dimensional semiconductors.

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preprint2016arXiv

Phylogenomic Analyses of Large-scale Nuclear Genes Provide New Insights into the Evolutionary Relationships within the Rosids

The Rosids is one of the largest groups of flowering plants, with 140 families and ~70,000 species. Previous phylogenetic studies of the rosids have primarily utilized organelle genes that likely differ in evolutionary histories from nuclear genes. To better understand the evolutionary history of rosids, it is necessary to investigate their phylogenetic relationships using nuclear genes. Here, we employed large-scale phylogenomic datasets composed of nuclear genes, including 891 clusters of putative orthologous genes. Combined with comprehensive taxon sampling covering 63 species representing 14 out of the 17 orders, we reconstructed the rosids phylogeny with coalescence and concatenation methods, yielding similar tree topologies from all datasets. However, these topologies did not agree on the placement of Zygophyllales. Through comprehensive analyses, we found that missing data and gene tree heterogeneity were potential factors that may mislead concatenation methods, in particular, large amounts of missing data under high gene tree heterogeneity. Our results provided new insights into the deep phylogenetic relationships of the rosids, and demonstrated that coalescence methods may effectively resolve the phylogenetic relationships of the rosids with missing data under high gene tree heterogeneity.

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preprint2013arXiv

Dirac quasinormal modes in spherically symmetric regular black holes

Using the WKB approximation, massless and massive Dirac quasinormal modes (QNMs) are studied in spherically symmetric regular spacetimes. We analyze the relationships between QNM frequencies and the parameters (angular momentum number $l$, magnetic monopole charge $β$ and the mass of the field $m$), and discuss the extreme charge of magnetic monopole $β_{e}$ for spherically symmetric regular black holes (BHs). Furthermore, we apply an expansion method to expand QNMs in inverse powers of $L=l+1/2$, and confirm good precision with $l>n$. Finally, we improve traditional finite difference method to be available in massive Dirac case, and illuminate the dynamical evolution of massive Dirac field.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Extraction of Deep Phylogenetic Signal and Improved Resolution of Evolutionary Events within the recA/RAD51 Phylogeny

The recA/RAD51 gene family encodes a diverse set of recombinase proteins that effect homologous recombination, DNA-repair, and genome stability. The recA gene family is expressed in almost all species of Eubacteria, Archaea, and Eukaryotes, and even in some viruses. To date, efforts to resolve the deep evolutionary origins of this ancient protein family have been hindered, in part, by the high sequence divergence between families (i.e. ~30% identity between paralogous groups). Through (i) large taxon sampling, (ii) the use of a phylogenetic algorithm designed for measuring highly divergent paralogs, and (iii) novel Evolutionary Spatial Dynamics simulation and analytical tools, we obtained a robust, parsimonious and more refined phylogenetic history of the recA/RAD51 superfamily. Taken together, our model for the evolution of recA/RAD51 family provides a better understanding of ancient origin of recA proteins and multiple events leading to the diversification of recA homologs in eukaryotes, including the discovery of additional RAD51 sub-families.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electron spin relaxation in intrinsic bulk InP semiconductor

Electron spin dynamics in intrinsic bulk Indium Phosphide (InP) semiconductor is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses at room temperature and 70 K. The reflectivity change from bleaching into absorption is observed with increasing pump photon energy, which can be explained in terms of the spin sensitive band filling and band gap renormalization effects. Density dependence of electron spin relaxation time shows similar tendency at room temperature and 70 K. With increasing carrier density, the electron spin relaxation time increases and then decreases after reaching a maximum value. Our experimental results agree well with the recent theoretical prediction [Jiang and Wu, Phys. Rev. B 79, 125206 (2009)] and D'yakonov-Perel' mechanism is considered as a dominating contribution to the electron spin relaxation in intrinsic bulk InP semiconductor.

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