Researcher profile

Hisashi Kitamura

Hisashi Kitamura contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Effects of 6 MeV proton irradiation on the vortex ensemble in BaFe$_{2}$(As$_{0.67}$P$_{0.33}$)$_2$ revealed through magnetization measurements and real-space vortex imaging

The change in vortex ensemble in BaFe$_{2}$(As$_{0.67}$P$_{0.33}$)$_2$, an isovalently doped iron-based superconductor (IBS), is studied through global magnetization measurements and single vortex imaging before and after 6 MeV proton irradiation. The field dependence of the critical current density ($J_\mathrm{c}$) is analyzed through the strong pinning model, with which the pristine sample is consistent. After the irradiation, the $J_\mathrm{c}$ aberrates from the strong pinning field dependence of $B^{-5/8}$, and evolves to a weaker $B^{-1/3}$ dependence with an anomalous two-step behavior creating a cusp like feature. The cusp coincides with the field of the local minima in the normalized relaxation rate ($S$), manifested by increased pinning due to increased intervortex interactions followed by fast vortex dynamics caused by flux activation at higher fields. Furthermore, single vortex imaging reveals that while long-range triangular correlation of the Abrikosov vortex lattice is observed in pristine samples, irradiated samples exhibit a highly disordered glassy vortex state which is more densely packed with increased pinning force. These artificial defects incorporated via proton irradiation have the same pinning effect as Co doping which not only shifts the pinning force to a higher degree but also broadens its distribution, in contrast to P doping which only broadens the pinning distribution without inducing a shift. All in all, through this investigation, we provide a systematic understanding of the pinning behavior in BaFe$_{2}$(As$_{0.67}$P$_{0.33}$)$_2$ through carefully controlling the defects in the system.

preprint2020arXiv

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.

preprint2013arXiv

Single event effect characterization of the mixed-signal ASIC developed for CCD camera in space use

We present the single event effect (SEE) tolerance of a mixed-signal application-specific integrated circuit (ASIC) developed for a charge-coupled device camera onboard a future X-ray astronomical mission. We adopted proton and heavy ion beams at HIMAC/NIRS in Japan. The particles with high linear energy transfer (LET) of 57.9 MeV cm^{2}/mg is used to measure the single event latch-up (SEL) tolerance, which results in a sufficiently low cross-section of sigma_{SEL} < 4.2x10^{-11} cm^{2}/(IonxASIC). The single event upset (SEU) tolerance is estimated with various kinds of species with wide range of energy. Taking into account that a part of the protons creates recoiled heavy ions that has higher LET than that of the incident protons, we derived the probability of SEU event as a function of LET. Then the SEE event rate in a low-earth orbit is estimated considering a simulation result of LET spectrum. SEL rate is below once per 49 years, which satisfies the required latch-up tolerance. The upper limit of the SEU rate is derived to be 1.3x10^{-3}events/sec. Although the SEU events cannot be distinguished from the signals of X-ray photons from astronomical objects, the derived SEU rate is below 1.3% of expected non-X-ray background rate of the detector and hence these events should not be a major component of the instrumental background.