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Hiroshi Kohno

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cond-mat.mes-hall cond-mat.mtrl-sci physics.optics

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preprint2021arXiv

Magnetic-Field-Driven Antiferromagnetic Domain Wall Motion

We theoretically study the antiferromagnetic domain wall motion actuated by an inhomogeneous external magnetic field. The Lagrangian and the equations of motion of antiferromagnetic spins under an inhomogeneous magnetic field are derived, first in terms of the Néel vector, and then using collective coordinates of the domain wall. A solution is found that describes the actuation of a domain wall by an inhomogeneous field, in which the motion is initiated by a paramagnetic response of wall magnetization, which is then driven by a Stern-Gerlach like force. The effects of pinning potential are also investigated. These results are in good agreement with atomistic simulations. While the present formulation contains the so-called intrinsic magnetization associated with Néel texture, a supplementary discussion is given to reformulate the theory in terms of physical magnetization without the intrinsic magnetization.

preprint2020arXiv

Acoustic spin Hall effect in strong spin-orbit metals

We report on the observation of the acoustic spin Hall effect that facilitates lattice motion induced spin current via spin orbit interaction (SOI). Under excitation of surface acoustic wave (SAW), we find a spin current flows orthogonal to the propagation direction of a surface acoustic wave (SAW) in non-magnetic metals. The acoustic spin Hall effect manifests itself in a field-dependent acoustic voltage in non-magnetic metal (NM)/ferromagnetic metal (FM) bilayers. The acoustic voltage takes a maximum when the NM layer thickness is close to its spin diffusion length, vanishes for NM layers with weak SOI and increases linearly with the SAW frequency. To account for these results, we find the spin current must scale with the SOI and the time derivative of the lattice displacement. Such form of spin current can be derived from a Berry electric field associated with time varying Berry curvature and/or an unconventional spin-lattice interaction mediated by SOI. These results, which imply the strong coupling of electron spins with rotating lattices via the SOI, show the potential of lattice dynamics to supply spin current in strong spin orbit metals.

preprint2015arXiv

Anomalous Hall effect driven by dipolar spin waves in uniform ferromagnets

A new type of anomalous Hall effect is shown to arise from the interaction of conduction electrons with dipolar spin waves in ferromagnets. This effect exists even in homogeneous ferromagnets without relativistic spin-orbit coupling. The leading contribution to the Hall conductivity is proportional to the chiral spin correlation of dynamical spin textures and is physically understood in terms of the skew scattering by dipolar magnons.

preprint2015arXiv

Theory of anomalous optical properties of bulk Rashba conductor

The Rashba interaction induced when inversion symmetry is broken in solids is a key interaction connecting spin and charge for realizing novel magnetoelectric cross-correlation effects. Here, we theoretically explore the optical properties of a bulk Rashba conductor by calculating the transport coefficients at finite frequencies. It is demonstrated that the combination of direct and inverse Edelstein effects leads to a softening of the plasma frequency for the electric field perpendicular to the Rashba field, resulting in a hyperbolic electromagnetic metamaterial. In the presence of magnetization, a significant enhancement of anisotropic propagation (directional dichroism) is predicted because of interband transition edge singularity.Based on an effective Hamiltonian analysis, the dichroism is demonstrated to be driven by toroidal and quadratic moments of the magnetic Rashba system. The effective theory of the cross-correlation effects has the same mathematical structure as that of insulating multiferroics.

preprint2014arXiv

Current-driven dynamics of coupled domain walls in a synthetic antiferromagnet

We develop the theory of magnetic domain wall motion in coupled double-layer systems where electrons can hop between the layers giving rise to an antiferromagnetic coupling. We demonstrate that the force from the interlayer coupling drives the walls and the effect of the extrinsic pinning is greatly reduced if the domain walls are initially separated. The threshold current density for metastable spin-aligned configurations is also much lower. We conclude that the interlayer coupling has a significant effect on domain wall mobility in double-layer systems.

preprint2014arXiv

Transport Properties of Dirac Ferromagnet

We propose a model ferromagnet based on the Dirac Hamiltonian in three spatial dimensions, and study its transport properties which include anisotropic magnetoresistance (AMR) and anomalous Hall (AH) effect. This relativistic extension allows two kinds of ferromagnetic order parameters, denoted by $\bm{M}$ and $\bm{S}$, which are distinguished by the relative sign between the positive- and negative-energy states (at zero momentum) and become degenerate in the non-relativistic limit. Because of the relativistic coupling between the spin and the orbital motion, both $\bm{M}$ and $\bm{S}$ induce anisotropic deformations of the energy dispersion (and the Fermi surfaces) but in mutually opposite ways. The AMR is determined primarily by the anisotropy of the Fermi surface (group velocity), and secondarily by the anisotropy of the damping; the latter becomes important for ${\bm M}=\pm{\bm S}$, where the Fermi surfaces are isotropic. Even when the chemical potential lies in the gap, the AH conductivity is found to take a finite non-quantized value, $σ_{ij} = -(α/3π^2 \hbar) ε_{ijk} S_k $, where $α$ is the (effective) fine structure constant. This offers an example of Hall insulator in three spatial dimensions.

preprint2011arXiv

Spin and charge transport induced by gauge fields in a ferromagnet

We present a microscopic theory of spin-dependent motive force ("spin motive force") induced by magnetization dynamics in a conducting ferromagnet, by taking account of spin relaxation of conduction electrons. The theory is developed by calculating spin and charge transport driven by two kinds of gauge fields; one is the ordinary electromagnetic field $A^{\rm em}_μ$, and the other is the effective gauge field $A^{z}_μ$ induced by dynamical magnetic texture. The latter acts in the spin channel and gives rise to a spin motive force. It is found that the current induced as a linear response to $A^{z}_μ$ is not gauge-invariant in the presence of spin-flip processes. This fact is intimately related to the non-conservation of spin via Onsager reciprocity, so is robust, but indicates a theoretical inconsistency. This problem is resolved by considering the time dependence of spin-relaxation source terms in the "rotated frame", as in the previous study on Gilbert damping [J. Phys. Soc. Jpn. {\bf 76}, 063710 (2007)]. This effect restores the gauge invariance while keeping spin non-conservation. It also gives a dissipative spin motive force expected as a reciprocal to the dissipative spin torque ("$β$-term").

preprint2009arXiv

Spin Hall Current and Spin-transfer Torque in Ferromagnetic Metal

We theoretically examine the spin-transfer torque in the presence of spin-orbit interaction (SOI) at impurities in a ferromagnetic metal on the basis of linear response theory. We obtained, in addition to the usual spin-transfer torque, a new contributioin $\sim {\bm j}_{\rm SH}^{\phantom{\dagger}} \cdot \nabla {\bm n}$ in the first order in SOI, where ${\bm j}_{\rm SH}^{\phantom{\dagger}}$ is the spin Hall current driven by an external electric field. This is a reaction to inverse spin Hall effect driven by spin motive force in a ferromagnet.

preprint2007arXiv

Electrical switching of vortex core in a magnetic disk

A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate of a memory cell for future nonvolatile data storage devices. Thus, understanding of the stability and dynamical behaviour of the magnetic vortex is a major requirement for developing magnetic data storage technology. Since the experimental proof of the existence of a nanometre-scale core with out-of-plane magnetisation in the magnetic vortex, the dynamics of a vortex has been investigated intensively. However, the way to electrically control the core magnetisation, which is a key for constructing a vortex core memory, has been lacking. Here, we demonstrate the electrical switching of the core magnetisation by utilizing the current-driven resonant dynamics of the vortex; the core switching is triggered by a strong dynamic field which is produced locally by a rotational core motion at a high speed of several hundred m/s. Efficient switching of the vortex core without magnetic field application is achieved thanks to resonance. This opens up the potentiality of a simple magnetic disk as a building block for spintronic devices like a memory cell where the bit data is stored as the direction of the nanometre-scale core magnetisation.

preprint2005arXiv

Effect of Spin Current on Uniform Ferromagnetism: Domain Nucleation

Large spin current applied to a uniform ferromagnet leads to a spin-wave instability as pointed out recently. In this paper, it is shown that such spin-wave instability is absent in a state containing a domain wall, which indicates that nucleation of magnetic domains occurs above a certain critical spin current. This scenario is supported also by an explicit energy comparison of the two states under spin current.

preprint2003arXiv

Theory of Current-Driven Domain Wall Motion: A Poorman's Approach

A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current is shown to have two effects; one is momentum transfer, which is proportional to the charge current and wall resistivity ($\rhow$), and the other is spin transfer, proportional to spin current. For thick walls, as in metallic wires, the latter dominates and the threshold current for wall motion is determined by the hard-axis magnetic anisotropy, except for the case of very strong pinning. For thin walls, as in nanocontacts and magnetic semiconductors, the momentum-transfer effect dominates, and the threshold current is proportional to $\Vz/\rhow$, $\Vz$ being the pinning potential.