Researcher profile

Hidekazu Shimotani

Hidekazu Shimotani contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2013arXiv

Electron carrier-mediated room temperature ferromagnetism in anatase (Ti,Co)O2

Since the discovery of room temperature ferromagnetism in (Ti,Co)O2, the mechanism has been under discussion for a decade. Particularly, the central concern has been whether or not the ferromagnetic exchange interaction is mediated by charge carriers like (Ga,Mn)As. Recent two studies on the control of ferromagnetism in anatase (Ti,Co)O2 at room temperature via electric field effect [Y. Yamada et al., Science 332, 1065 (2011)] and chemical doping [Y. Yamada et al., Appl. Phys. Lett. 99, 242502 (2011)] indicate a principal role of electrons in the carrier-mediated exchange interaction. In this article, the authors review fundamental properties of anatase (Ti,Co)O2 and discuss the carrier mediated ferromagnetism.

preprint2010arXiv

Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors

In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, nS, of 1014 cm-2, the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. nS reached 1015 cm-2 at 5 V, and the electron mobility at 2 K was as large as 104 cm2/Vs. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3.