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Researcher profile

Kazunori Ueno

Kazunori Ueno contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

5 published item(s)

preprint2026arXiv

High mobility holes at germanane/Ge(111) allotropic cross-dimensional heterointerface

Germanane (GeH) is essentially a hydrogen-terminated Ge analog of graphene with a direct gap (~1.6 eV). Record hole mobility mu_h~67,000 cm2/Vs is found at 15 K for a single allotropic cross-dimensional(D) heterointerface. This is enabled by making topotactically-transformed 2D GeH layers meet the 3D bulk Ge(111). Temperature dependence of mu_h implies metallic conduction without ionized impurity scattering between 20 K and 250 K. Sheet hole density for a Fermi sphere n_S=2.8x10^11 /cm2 agrees well with 3.0x10^11 /cm2 of Hall measurements. A 6,500% magnetoresistance at 7 T accompanies Shubnikov-de Haas oscillations visible even at 15 K. These imply single-band conduction of holes with small effective mass in the in-plane directions, invoking a 2D hole gas (2DHG) picture that allotropic cross-D heterointerface between 2D GeH and 3D Ge harbors 2D-confined high-mobility holes. Even without elaborate heteroepitaxy and modulation doping, allotropic cross-D heterostructures pave the way toward facile 2DHG creation.

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preprint2021arXiv

Transport properties around the metal-insulator transition for SrVO3 ultrathin films fabricated by electrochemical etching

By using electrochemical etching, we fabricated conductive ultrathin SrVO3 (SVO) films that exhibited metallic behavior down to 3 monolayers (ML). From an observed systematic change in transport properties with decreasing film thickness, it was found that the disorder in the films remained nearly unchanged during etching, and only the thickness was reduced. This is in contrast to the insulating behavior found for as-deposited SVO ultrathin films. For the etched films, the electron mobility at 200 K decreased with decreasing film thickness below 10 ML, originating from an increased scattering rate and electron effective mass near the metal-insulator transition. A slight upturn in the resistivity and a positive magnetoresistance at low temperatures were typically observed for the etched films down to 3 ML, which was explained by weak anti-localization of electrons in a weakly disordered metal.

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preprint2020arXiv

Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO$_3$ films

In this study, we investigated the gate voltage dependence of $T_{\mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{\mathrm c}^{\mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{\mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{\mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{\mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.

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preprint2013arXiv

Electron carrier-mediated room temperature ferromagnetism in anatase (Ti,Co)O2

Since the discovery of room temperature ferromagnetism in (Ti,Co)O2, the mechanism has been under discussion for a decade. Particularly, the central concern has been whether or not the ferromagnetic exchange interaction is mediated by charge carriers like (Ga,Mn)As. Recent two studies on the control of ferromagnetism in anatase (Ti,Co)O2 at room temperature via electric field effect [Y. Yamada et al., Science 332, 1065 (2011)] and chemical doping [Y. Yamada et al., Appl. Phys. Lett. 99, 242502 (2011)] indicate a principal role of electrons in the carrier-mediated exchange interaction. In this article, the authors review fundamental properties of anatase (Ti,Co)O2 and discuss the carrier mediated ferromagnetism.

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preprint2010arXiv

Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors

In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, nS, of 1014 cm-2, the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. nS reached 1015 cm-2 at 5 V, and the electron mobility at 2 K was as large as 104 cm2/Vs. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3.

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