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Hidefumi Akiyama

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Published work

3 published item(s)

preprint2024arXiv

Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection

We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several $μ$rads resolves the Faraday rotation of terahertz pulses arising from the inverse spin Hall effect of optically injected spin-polarized electrons. The obtained spin Hall conductivity spectrum exhibits an excellent quantitative agreement with theory, demonstrating a crossover in the dominant origin from impurity scattering in the DC regime to the intrinsic Berry-curvature mechanism in the terahertz regime. Our spectroscopic technique opens a new pathway to analyze anomalous transports related to spin, valley, or orbital degrees of freedom.

preprint2019arXiv

In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip

Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs pose a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a new hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in-situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from the dissimilar sources. Here, we demonstrate in-situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in-situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.

preprint2002arXiv

Gain in a quantum wire laser of high uniformity

A multi-quantum wire laser operating in the 1-D ground state has been achieved in a very high uniformity structure that shows free exciton emission with unprecedented narrow width and low lasing threshold. Under optical pumping the spontaneous emission evolves from a sharp free exciton peak to a red-shifted broad band. The lasing photon energy occurs about 5 meV below the free exciton. The observed shift excludes free excitons in lasing and our results show that Coulomb interactions in the 1-D electron-hole system shift the spontaneous emission and play significant roles in laser gain.