Researcher profile

Alto Osada

Alto Osada contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Feasibility study on ground-state cooling and single-phonon readout of trapped electrons using hybrid quantum systems

Qubits of long coherence time and fast quantum operations are long-sought objectives towards the realization of high-fidelity quantum operations and their applications to the quantum technologies. An electron levitated in a vacuum by a Paul trap is expected to be a good candidate, for its light mass and hence the high secular frequency which allows for the faster gate operations than those in trapped ions. Controlling the motional state of the trapped electron is a crucial issue, for it mediates an interaction between electron spins, intrinsic qubits embedded in electrons, and its decoherence results in degraded fidelity of two-qubit gates. In addition, an efficient readout of the motional state is important, regarding the possibility of detecting spin state by using it. Despite of such an importance, how to achieve the motional ground state and how to efficiently detect it are not reported so far. Here we propose methods addressing these issues by utilizing hybrid quantum systems involving electron-superconducting circuit and electron-ion coupled systems and analyze the feasibility of our schemes. In both systems, we show that the ground-state cooling and the single-phonon readout of the motional state of the trapped electron are possible. Our work shed light on the way to precisely control the motional states of the trapped electrons, that provides an interesting playground for the development of quantum technologies.

preprint2020arXiv

Fast parametric two-qubit gates with suppressed residual interaction using a parity-violated superconducting qubit

We demonstrate fast two-qubit gates using a parity-violated superconducting qubit consisting of a capacitively-shunted asymmetric Josephson-junction loop under a finite magnetic flux bias. The second-order nonlinearity manifesting in the qubit enables the interaction with a neighboring single-junction transmon qubit via first-order inter-qubit sideband transitions with Rabi frequencies up to 30~MHz. Simultaneously, the unwanted static longitudinal~(ZZ) interaction is eliminated with ac Stark shifts induced by a continuous microwave drive near-resonant to the sideband transitions. The average fidelities of the two-qubit gates are evaluated with randomized benchmarking as 0.967, 0.951, 0.956 for CZ, iSWAP and SWAP gates, respectively.

preprint2019arXiv

In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip

Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs pose a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a new hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in-situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from the dissimilar sources. Here, we demonstrate in-situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in-situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.