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Aron Pinczuk

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Published work

13 published item(s)

preprint2022arXiv

Domain Textures in the Fractional Quantum Hall Effect

Impacts of domain textures on low-lying neutral excitations in the bulk of fractional quantum Hall effect (FQHE) systems are probed by resonant inelastic light scattering. We demonstrate that large domains of quantum fluids support long-wavelength neutral collective excitations with well-defined wave vector (momentum) dispersion that could be interpreted by theories for uniform phases. Access to dispersive low-lying neutral collective modes in large domains of FQHE fluids such as long wavelength magnetorotons at filling factor v=1/3 offer significant experimental access to strong electron correlation physics in the FQHE.

preprint2012arXiv

Evidence of inter-layer interaction in magneto-luminescence spectra of electron bilayers

Magneto-luminescence studies in electron bilayers reveal the hallmarks of the even-denominator and other quantum Hall states in the intensities and energies of the inter-band optical recombination lines. In the presence of a small tunneling gap between the layers the magneto-optical emission from the lowest anti-symmetric subband, not populated in a single-electron picture, displays maxima at filling factors 1 and 2/3. These findings uncover a loss of pseudospin polarization, where the pseudospin describes the layer index degree of freedom, that is linked to an anomalous population of the anti-symmetric level due to excitonic correlations. The results demonstrate a new realm to probe the impact of inter-layer Coulomb interaction in quantum Hall bilayers.

preprint2012arXiv

Graphene growth on h-BN by Molecular Beam Epitaxy

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.

preprint2012arXiv

Molecular beam growth of graphene nanocrystals on dielectric substrates

We demonstrate the growth of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that can be used on a diverse class of large area dielectric substrates. Characterization by Raman and Near Edge X-ray Absorption Fine Structure spectroscopies reveal a sp2 hybridized hexagonal carbon lattice in the nanocrystals. Lower growth rates favor the formation of higher quality, larger size multi-layer graphene crystallites on all investigated substrates. The surface morphology is determined by the roughness of the underlying substrate and graphitic monolayer steps are observed by ambient scanning tunneling microscopy.

preprint2012arXiv

Raman Spectroscopy of magneto-phonon resonances in Graphene and Graphite

The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors, in two-dimensional systems and in quantum dots. Recently there has been significant interest in the MPR interactions of the Dirac fermion magnetoexcitons in graphene, and a rich splitting and anti-crossing phenomena of the even parity E2g long wavelength optical phonon mode have been theoretically proposed and experimentally observed. The MPR has been found to crucially depend on disorder in the graphene layer. This is a feature that creates new venues for the study of interplays between disorder and interactions in the atomic layers. We review here the fundamentals of MRP in graphene and the experimental Raman scattering works that have led to the observation of these phenomena in graphene and graphite.

preprint2011arXiv

Higher Energy Composite Fermion Levels in the Fractional Quantum Hall Effect

Even though composite fermions in the fractional quantum Hall liquid are well established, it is not yet known up to what energies they remain intact. We probe the high-energy spectrum of the 1/3 liquid directly by resonant inelastic light scattering, and report the observation of a large number of new collective modes. Supported by our theoretical calculations, we associate these with transitions across two or more composite fermions levels. The formation of quasiparticle levels up to high energies is direct evidence for the robustness of topological order in the fractional quantum Hall effect.

preprint2011arXiv

Probing the spin states of three interacting electrons in quantum dots

We observe a low-lying sharp spin mode of three interacting electrons in an array of nanofabricated AlGaAs/GaAs quantum dots by means of resonant inelastic light scattering. The finding is enabled by a suppression of the inhomogeneous contribution to the excitation spectra obtained by reducing the number of optically-probed quantum dots. Supported by configuration-interaction calculations we argue that the observed spin mode offers a direct probe of Stoner ferromagnetism in the simplest case of three interacting spin one-half fermions.

preprint2011arXiv

Rapid collapse of spin waves in non-uniform phases of the second Landau level

The spin degree of freedom in quantum phases of the second Landau level is probed by resonant light scattering. The long wavelength spin wave, which monitors the degree of spin polarization, is at the Zeeman energy in the fully spin-polarized state at $ν$=3. At lower filling factors the intensity of the Zeeman mode collapses indicating loss of polarization. A novel continuum of low-lying excitations emerges that dominates near $ν$=8/3 and $ν$=5/2. Resonant Rayleigh scattering reveals that quantum fluids for $ν<3$ break up into robust domain structures. While the state at $ν$=5/2 is considered to be fully polarized, these results reveal unprecedented roles for spin degrees of freedom.

preprint2011arXiv

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

preprint2010arXiv

Correlated electrons in optically-tunable quantum dots: Building an electron dimer molecule

We observe the low-lying excitations of a molecular dimer formed by two electrons in a GaAs semiconductor quantum dot in which the number of confined electrons is tuned by optical illumination. By employing inelastic light scattering we identify the inter-shell excitations in the one-electron regime and the distinct spin and charge modes in the interacting few-body configuration. In the case of two electrons a comparison with configuration-interaction calculations allows us to link the observed excitations with the breathing mode of the molecular dimer and to determine the singlet-triplet energy splitting.

preprint2008arXiv

Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots

Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.

preprint2005arXiv

Evidence of correlation in spin excitations of few-electron quantum dots

We report inelastic light scattering measurements of spin and charge excitations in nanofabricated AlGaAs/GaAs quantum dots with few electrons. A narrow spin excitation peak is observed and assigned to the intershell triplet-to-singlet monopole mode of dots with four electrons. Configurationinteraction theory provides precise quantitative interpretations that uncover large correlation effects that are comparable to exchange Coulomb interactions.

preprint2002arXiv

Gain in a quantum wire laser of high uniformity

A multi-quantum wire laser operating in the 1-D ground state has been achieved in a very high uniformity structure that shows free exciton emission with unprecedented narrow width and low lasing threshold. Under optical pumping the spontaneous emission evolves from a sharp free exciton peak to a red-shifted broad band. The lasing photon energy occurs about 5 meV below the free exciton. The observed shift excludes free excitons in lasing and our results show that Coulomb interactions in the 1-D electron-hole system shift the spontaneous emission and play significant roles in laser gain.