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Heng Wu

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Published work

8 published item(s)

preprint2026arXiv

Operator learning on domain boundary through combining fundamental solution-based artificial data and boundary integral techniques

For linear partial differential equations with known fundamental solutions, this work introduces a novel operator learning framework that relies exclusively on domain boundary data, including solution values and normal derivatives, rather than full-domain sampling. By integrating the previously developed Mathematical Artificial Data (MAD) method, which enforces physical consistency, all training data are synthesized directly from the fundamental solutions of the target problems, resulting in a fully data-driven pipeline without the need for external measurements or numerical simulations. We refer to this approach as the Mathematical Artificial Data Boundary Neural Operator (MAD-BNO), which learns boundary-to-boundary mappings using MAD-generated Dirichlet-Neumann data pairs. Once trained, the interior solution at arbitrary locations can be efficiently recovered through boundary integral formulations, supporting Dirichlet, Neumann, and mixed boundary conditions as well as general source terms. The proposed method is validated on benchmark operator learning tasks for two-dimensional Laplace, Poisson, and Helmholtz equations, where it achieves accuracy comparable to or better than existing neural operator approaches while significantly reducing training time. The framework is naturally extensible to three-dimensional problems and complex geometries.

preprint2025arXiv

Mathematical artificial data for operator learning

Machine learning has emerged as a transformative tool for solving differential equations (DEs), yet prevailing methodologies remain constrained by dual limitations: data-driven methods demand costly labeled datasets while model-driven techniques face efficiency-accuracy trade-offs. We present the Mathematical Artificial Data (MAD) framework, a new paradigm that integrates physical laws with data-driven learning to facilitate large-scale operator discovery. By exploiting DEs' intrinsic mathematical structure to generate physics-embedded analytical solutions and associated synthetic data, MAD fundamentally eliminates dependence on experimental or simulated training data. This enables computationally efficient operator learning across multi-parameter systems while maintaining mathematical rigor. Through numerical demonstrations spanning 2D parametric problems where both the boundary values and source term are functions, we showcase MAD's generalizability and superior efficiency/accuracy across various DE scenarios. This physics-embedded-data-driven framework and its capacity to handle complex parameter spaces gives it the potential to become a universal paradigm for physics-informed machine intelligence in scientific computing.

preprint2022arXiv

Hyperspectral image reconstruction for spectral camera based on ghost imaging via sparsity constraints using V-DUnet

Spectral camera based on ghost imaging via sparsity constraints (GISC spectral camera) obtains three-dimensional (3D) hyperspectral information with two-dimensional (2D) compressive measurements in a single shot, which has attracted much attention in recent years. However, its imaging quality and real-time performance of reconstruction still need to be further improved. Recently, deep learning has shown great potential in improving the reconstruction quality and reconstruction speed for computational imaging. When applying deep learning into GISC spectral camera, there are several challenges need to be solved: 1) how to deal with the large amount of 3D hyperspectral data, 2) how to reduce the influence caused by the uncertainty of the random reference measurements, 3) how to improve the reconstructed image quality as far as possible. In this paper, we present an end-to-end V-DUnet for the reconstruction of 3D hyperspectral data in GISC spectral camera. To reduce the influence caused by the uncertainty of the measurement matrix and enhance the reconstructed image quality, both differential ghost imaging results and the detected measurements are sent into the network's inputs. Compared with compressive sensing algorithm, such as PICHCS and TwIST, it not only significantly improves the imaging quality with high noise immunity, but also speeds up the reconstruction time by more than two orders of magnitude.

preprint2022arXiv

Realization of the field-free Josephson Diode

The superconducting analog to the semiconducting diode, the Josephson diode, has long been sought, with multiple avenues to realization proposed by theorists. Exhibiting magnetic-field free, single directional superconductivity with Josephson coupling of the supercurrent across a tunnel barrier, it would serve as the building-block for next-generation superconducting circuit technology. Here we realized the field-free Josephson diode using an inversion symmetry breaking heterostructure of $\mathrm{NbSe_2/Nb_3Br_8/NbSe_2}$. We demonstrate, for the first time without magnetic field, the junction can be superconducting in one direction while normal in the opposite direction. Based on that, half-wave rectification of a square-wave excitation was achieved with low switching current density ($~2.2\times 10^2 \mathrm{A/cm^2}$), high rectification ratio ($~10^4$) and high robustness (at least $10^4$ cycles). We also demonstrate symmetric $ΔI_\mathrm{c}$ (the difference between positive and negative critical currents) behavior with field and the expected Fraunhofer current phase relation of a Josephson junction. This realization raises fundamental questions about the Josephson effect through an insulator when breaking symmetry, and opens the door to ultralow power, high speed, superconducting circuits for logic and signal modulation.

preprint2014arXiv

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.

preprint2014arXiv

High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)

In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (namely, doping and high Rc) towards demonstration of high-performance TMDs field-effect transistors (FETs). By using 1,2 dichloroethane (DCE) as the doping reagent, we demonstrate an active n-type doping density > 2*1019 cm-3 in a few-layer MoS2 film. This enabled us to reduce the Rc value to a record low number of 0.5 kohm*um, which is ~10x lower than the control sample without doping. The corresponding specific contact resistivity (pc) is found to decrease by two orders of magnitude. With such low Rc, we demonstrate 100 nm channel length (Lch) MoS2 FET with a drain current (Ids) of 460 uA/um at Vds = 1.6 V, which is twice the best value reported so far on MoS2 FETs.

preprint2013arXiv

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5nm) Al2O3 interfacial layer between higher-k and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63mV/dec has been demonstrated at sub-80nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors.

preprint2012arXiv

Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.