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HeeBong Yang

HeeBong Yang contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Extensive Study of Multiple Deep Neural Networks for Complex Random Telegraph Signals

Time-fluctuating signals are ubiquitous and diverse in many physical, chemical, and biological systems, among which random telegraph signals (RTSs) refer to a series of instantaneous switching events between two discrete levels from single-particle movements. Reliable RTS analyses are crucial prerequisite to identify underlying mechanisms related to performance sensitivity. When numerous levels partake, complex patterns of multilevel RTSs occur, making their quantitative analysis exponentially difficult, hereby systematic approaches are found elusive. Here, we present a three-step analysis protocol via progressive knowledge-transfer, where the outputs of early step are passed onto a subsequent step. Especially, to quantify complex RTSs, we build three deep neural network architectures that can process temporal data well and demonstrate the model accuracy extensively with a large dataset of different RTS types affected by controlling background noise size. Our protocol offers structured schemes to quantify complex RTSs from which meaningful interpretation and inference can ensue.

preprint2022arXiv

High-Performance Mid-IR to Deep-UV van der Waals Photodetectors Capable of Local Spectroscopy at Room Temperature

The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve this goal. We bypass this challenge by demonstrating an extremely broadband photodetector based on a two-dimensional (2D) van der Waals heterostructure that is sensitive to light across over a decade in energy from the mid-infrared (MIR) to deep-ultraviolet (DUV) at room temperature. The devices feature high detectivity (> 10^9 cm Hz^1/2 W^-1) together with high bandwidth (2.1 MHz). The active area can be further miniaturized to submicron dimensions, far below the diffraction limit for the longest detectable wavelength of 4.1 um, enabling such devices for facile measurements of local optical properties on atomic-layer-thickness samples placed in close proximity. This work can lead to the development of low-cost and high-throughput photosensors for hyperspectral imaging at the nanoscale.

preprint2022arXiv

Numerical Studies of Optimized Designs for Carbon Nanotube Microstrip Antennas

We perform systematic numerical simulations for carbon nanotube (CNT) film microstrip antennas to fabricate flexible and durable applications in terms of various device design parameters. The selection of appropriate materials for conductive films and a substrate of the conformable and robust microstrip antennas are crucial to increase the radiation efficiency and to reduce the losses while maintaining the mechanical properties. CNTs have been spotlighted as a promising nano-material, exhibiting excellent electrical and mechanical performances as desirable features for microwave wearable devices. Considering the material properties of the conductor and the substrate, we examine the possible ranges of the CNT film conductivities, conductive film thickness, and a dielectric constant and thickness of a substrate. Furthermore, we model non-uniform spatial distributions of conductivity in the CNT film to assess their impact on the antenna performance. Our extensive studies of material constants and conductivity spatial patterns propose design guidelines for optimal microstrip antennas made of CNT conductive films operating in microwave frequencies.

preprint2022arXiv

Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime

We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is observed at the CB hump where the high-current RTN level dramatically switches to the low-current level. The gate-voltage dependence of the RTN amplitude and power spectral density match well with the transconductance from the DC transfer curve in the CB hump region. Our work unequivocally captures these QD transport signatures in both current and noise, revealing quantum confinement effects in commercial short-channel PMOS even at 14 K, over 100 times higher than the typical dilution refrigerator temperatures of QD experiments (<100 mK). We envision that our reported RTN characteristics rooted from the QD and a defect trap would be more prominent for smaller technology nodes, where the quantum effect should be carefully examined in cryogenic CMOS circuit designs.