Researcher profile

Marcel Robitaille

Marcel Robitaille contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Extensive Study of Multiple Deep Neural Networks for Complex Random Telegraph Signals

Time-fluctuating signals are ubiquitous and diverse in many physical, chemical, and biological systems, among which random telegraph signals (RTSs) refer to a series of instantaneous switching events between two discrete levels from single-particle movements. Reliable RTS analyses are crucial prerequisite to identify underlying mechanisms related to performance sensitivity. When numerous levels partake, complex patterns of multilevel RTSs occur, making their quantitative analysis exponentially difficult, hereby systematic approaches are found elusive. Here, we present a three-step analysis protocol via progressive knowledge-transfer, where the outputs of early step are passed onto a subsequent step. Especially, to quantify complex RTSs, we build three deep neural network architectures that can process temporal data well and demonstrate the model accuracy extensively with a large dataset of different RTS types affected by controlling background noise size. Our protocol offers structured schemes to quantify complex RTSs from which meaningful interpretation and inference can ensue.

preprint2022arXiv

Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime

We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is observed at the CB hump where the high-current RTN level dramatically switches to the low-current level. The gate-voltage dependence of the RTN amplitude and power spectral density match well with the transconductance from the DC transfer curve in the CB hump region. Our work unequivocally captures these QD transport signatures in both current and noise, revealing quantum confinement effects in commercial short-channel PMOS even at 14 K, over 100 times higher than the typical dilution refrigerator temperatures of QD experiments (<100 mK). We envision that our reported RTN characteristics rooted from the QD and a defect trap would be more prominent for smaller technology nodes, where the quantum effect should be carefully examined in cryogenic CMOS circuit designs.