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Hartwin Peelaers

Hartwin Peelaers contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Interface-induced band bending and charge separation in all-organic ZnPc/F$_x$ZnPc heterostructures

Organic semiconductors are attractive building blocks for electronic devices due to their low cost and flexibility. Furthermore, heterostructures with type-II band alignments can efficiently separate photogenerated charges via a charge transfer and separation process. Here, we use density functional theory (DFT) to investigate model interfaces formed by zinc phthalocyanine (ZnPc) and its fluorinated derivatives (F$_8$ZnPc and F$_{16}$ZnPc). We demonstrate that these interfaces not only exhibit a type-II band offset, but also band bending. The band bending causes both the LUMO and HOMO states to localize away from the interface. Therefore, the band bending creates a strong driving force for charge separation. We used ultraviolet photoemission spectroscopy (UPS) to experimentally confirm this predicted band bending. The wavefunction envelopes of vertically-stacked molecules resemble particle-in-a-box states, but this shape is lost when the molecules are staggered. These results elucidate how interface-induced band bending facilitates charge separation in all-organic heterostructures and suggest a design pathway toward improved performance in organic photovoltaic devices.

preprint2020arXiv

Intra- and Inter-Conduction Band Optical Absorption Processes in $β$-Ga$_2$O$_3$

$β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3$ absorb light from the IR to the UV wavelength range via intra- and inter-conduction band optical transitions. Intra-conduction band absorption occurs via an indirect optical phonon mediated process with a $1/ω^{3}$ dependence in the visible to near-IR wavelength range. This frequency dependence markedly differs from the $1/ω^{2}$ dependence predicted by the Drude model of free-carrier absorption. The inter-conduction band absorption between the lowest conduction band and a higher conduction band occurs via a direct optical process at $λ\sim 349$ nm (3.55 eV). Steady state and ultrafast optical spectroscopy measurements unambiguously identify both these absorption processes and enable quantitative measurements of the inter-conduction band energy, and the frequency dependence of absorption. Whereas the intra-conduction band absorption does not depend on light polarization, inter-conduction band absorption is found to be strongly polarization dependent. The experimental observations, in excellent agreement with recent theoretical predictions for $β$-Ga$_2$O$_3$, provide important limits of sub-bandgap transparency for optoelectronics in the deep-UV to visible wavelength range, and are also of importance for high electric field transport effects in this emerging semiconductor.