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Researcher profile

Harald Schneider

Harald Schneider contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.opticscond-mat.mes-hallphysics.app-ph

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Published work

7 published item(s)

preprint2022arXiv

Pump-induced terahertz anisotropy in bilayer graphene

We investigate the intraband nonlinear dynamics in doped bilayer graphene in the presence of strong, linearly-polarized, in-plane terahertz fields. We perform degenerate pump-probe experiments with 3.4 THz fields on doped bilayer graphene at low temperature (12 K) and find that when the pump is co-polarized with the probe beam, the differential pump-probe signal is almost double that found in the cross-polarized case. We show that the origin of this pump-induced anisotropy is the difference in the average electron effective mass in the probe direction when carriers are displaced in k-space by the pump either parallel or perpendicular to the direction of the probe polarization. We model the system using both a simple semiclassical model and a Boltzmann equation simulation of the electron dynamics with phenomenological scattering and find good qualitative agreement with experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Terahertz control of photoluminescence emission in few-layer InSe

A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the time scale of 50ps at T =10K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this leads to a heating of the carriers and a broadening of their distribution, which reduces the probability of bimolecular electron-hole recombination and, therefore, the luminescence. By numerically evaluating the Boltzmann equation, we are able to clarify the individual roles of optical and acoustic phonons in the subsequent cooling process. The same PL quenchingmechanismis expected in other van derWaals semiconductors and the effectwill be particularly strong for materials with low carrier masses and long carrier relaxation time, which is the case for InSe. This work gives a solid background for the development of opto-electronic applications based on InSe, such as THz detectors and optical modulators.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultra-Broadband Visible and Infrared Light Generation Driven by Far Infrared Light in the Broad Region from 8μm to 240μm

The most commonly used nonlinear optical process is the conversion of infrared light at 1064nm to green light at 532nm, as performed in common laser pointers. However, more relevant for future applications are nonlinear optical processes that generate a broad spectrum, a so called supercontinuum. A desirable goal is generating a spectrum that covers the whole visible range (400 -900nm), i.e., white light. Nowadays, white-light generation is usually achieved in specially designed photonic fibres requiring high laser intensities. However, in previous studies we showed that amorphous powders of $(PhSn)_4S_6$ cluster-molecules generate white light when they are irradiated by low-intensity near-infrared light. In this study, we use the mid- and far-infrared radiation of a free-electron laser to investigate the same molecules. White-light generation is observed for excitation with wavelength between 8 and 240$μ$ m. While the emitted radiation shows only slight variations, its intensity strongly depends on the excitation wavelength. We then match the wavelength dependent efficiency with the infrared absorption spectra of the material. This comparison shows: whenever the excitation can introduce molecular vibrations, less white light is generated. For all other wavelengths the excitation interacts mostly with the electron system. This shows that the electron system and the molecular backbone are decoupled to a large extent. Our work contributes to the understanding of the nonlinear process that underlies white-light generation in $(PhSn)_4S_6$ cluster molecules. Additionally, it shows the high potential of this material in applications where a broad laser spectrum is desired.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mode-locked ultrashort pulses from an 8 $μ$m wavelength semiconductor laser

Quantum cascade lasers (QCL) have revolutionized the generation of mid-infrared light. Yet, the ultrafast carrier transport in mid-infrared QCLs has so far constituted a seemingly insurmountable obstacle for the formation of ultrashort light pulses. Here, we demonstrate that careful quantum design of the gain medium and control over the intermode beat synchronization enable transform-limited picosecond pulses from QCL frequency combs. Both an interferometric radio-frequency technique and second-order autocorrelation shed light on the pulse dynamics and confirm that mode-locked operation is achieved from threshold to rollover current. Being electrically pumped and compact, mode-locked QCLs pave the way towards monolithically integrated non-linear photonics in the molecular fingerprint region beyond 6 $μ$m wavelength.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nonlinear Charge Transport in InGaAs Nanowires at Terahertz Frequencies

We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump / THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The plasmon resonance of the photoexcited charge carriers exhibits a systematic redshift and a suppression of its spectral weight for THz driving fields exceeding 0.4 MV/cm. This behavior is attributed to the intervalley electron scattering resulting in the increase of the average electron effective mass and the corresponding decrease of the electron mobility by about 2 times at the highest fields. We demonstrate that the increase of the effective mass is non-uniform along the nanowires and takes place mainly in their middle part, leading to a spatially inhomogeneous carrier response. Our results quantify the nonlinear transport regime in GaAs-based nanowires and show their high potential for development of nano-devices operating at THz frequencies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Photoluminescence dynamics in few-layer InSe

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguishable at low temperature: direct bandgap electron-hole and defect-assisted recombination. The two recombination processes have lifetime of $τ_1 \sim 8\;$ns and $τ_2 \sim 100\;$ns, respectively. The relative weights of the direct bandgap and defect-assisted contributions show a strong layer dependence due to the direct-to-indirect bandgap crossover. Electron-hole PL lifetime is limited by population transfer to lower-energy states and no dependence on the number of layers was observed. The lifetime of the defect-assisted recombination gets longer for thinner samples. Finally, we show that the PL lifetime decreases at high temperatures as a consequence of more efficient non-radiative recombinations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Up to 70 THz bandwidth from implanted Ge photoconductive antenna excited by a fibre laser

Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy - reaches only up to 7 THz in regular transmission mode due to the absorption by infrared-active optical phonons. Here, we present ultra-broadband (extending up to 70 THz) THz emission from Au implanted Ge emitter which is compatible with a fibre laser operating at 1.1 and 1.55 μm wavelengths at a repetition rates of 10 and 20 MHz, respectively. This opens a perspective for the development of compact THz photonic devices operating up to multi-THz frequencies and compatible with Si CMOS technology.

0 citations0 reviewsNo code linkedOpen access