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Hanno Perrey

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Published work

3 published item(s)

preprint2026arXiv

Constellation: The Autonomous Control and Data Acquisition System for Dynamic Experimental Setups

The operation of instruments and detectors in laboratory or beamline environments presents a complex challenge, requiring stable operation of multiple concurrent devices, often controlled by separate hardware and software solutions. These environments frequently undergo modifications, such as the inclusion of different auxiliary devices depending on the experiment or facility, adding further complexity. The successful management of such dynamic configurations demands a flexible and robust system capable of controlling data acquisition, monitoring experimental setups, enabling seamless reconfiguration, and integrating new devices with limited effort. This paper presents Constellation, a flexible and network-distributed control and data acquisition software framework tailored to laboratory and beamline environments, that addresses the limitations of existing solutions. The framework is designed with a focus on extensibility, providing a streamlined interface for instrument integration. It supports efficient system setup via network discovery mechanisms, promotes stability through autonomous operational features, and provides comprehensive documentation and supporting tools for operators and application developers such as controllers and logging interfaces. At the core of the architectural design is the autonomy of the individual components, called satellites, which can make independent decisions about their operation and communicate these decisions to other components. This paper introduces the design principles and framework architecture of Constellation, presents the available graphical user interfaces, shares insights from initial successful deployments, and provides an outlook on future developments and applications.

preprint2012arXiv

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times 200 \mum arriving within less than 100 fs, and a time interval between XFEL pulses of 220 ns. To address these challenges, in particular the question of radiation damage, the properties of the SiO_2 layer and of the Si-SiO_2 interface using MOS capacitors manufactured on high resistivity n-type silicon irradiated to X-ray doses between 10 kGy and 1 GGy, have been studied. Measurements of Capacitance/Conductance-Voltage (C/G-V) at different frequencies, as well as Thermal Dielectric Relaxation Current (TDRC) have been performed. The data can be described by a radiation dependent oxide charge density and three dominant radiation-induced interface states with Gaussian-like energy distributions in the silicon band gap. It is found that the densities of the fixed oxide charges and of the three interface states increase up to dose values of approximately 10 MGy and then saturate or even decrease. The shapes and the frequency dependences of the C/G-V measurements can be quantitatively described by a simple model using the parameters extracted from the TDRC measurements.

preprint2011arXiv

Study of X-ray Radiation Damage in Silicon Sensors

The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the insulating layer covering the silicon and interface traps at the Si-SiO2 interface will be introduced by the irradiation and build up over time. We have investigated the microscopic defects in test structures and the macroscopic electrical properties of segmented detectors as a function of the X-ray dose. From the test structures we determine the oxide charge density and the densities of interface traps as a function of dose. We find that both saturate (and even decrease) for doses between 10 and 100 MGy. For segmented sensors the defects introduced by the X-rays increase the full depletion voltage, the surface leakage current and the inter-pixel capacitance. We observe that an electron accumulation layer forms at the Si-SiO2 interface. Its width increases with dose and decreases with applied bias voltage. Using TCAD simulations with the dose dependent parameters obtained from the test structures, we are able to reproduce the observed results. This allows us to optimize the sensor design for the XFEL requirements.