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Researcher profile

Eckhart Fretwurst

Eckhart Fretwurst contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-dethep-ex

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Published work

12 published item(s)

preprint2014arXiv

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at high bias voltage. Within the AGIPD Collaboration the X-ray-radiation damage in MOS Capacitors and Gate-Controlled Diodes fabricated by four vendors on high-ohmic n-type silicon with two crystal orientations and dif- ferent technological parameters, has been studied for doses between 1 kGy and 1 GGy. The extracted values of oxide-charge and surface-current densi- ties have been used in TCAD simulations, and the layout and technological parameters of the AGIPD pixel sensor optimized. It is found that the op- timized layout for high X-ray doses is significantly different from the one for non-irradiated sensors. First sensors and test structures have been de-livered in early 2013. Measurement results for X-ray doses of 0 to 10 MGy and their comparison to simulations are presented. They demonstrate that the optimization has been successful and that the sensors fulfill the required specifications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-SiO2 interface of p+n silicon strip sensors have been measured, and the charge-collection efficiency determined. The laser has been operated in burst mode, with bursts typically spaced by 1 ms, each consisting of 30 pulses separated by 50 ns. In a previous paper it has been reported that, depending on X-ray-radiation damage, biasing history and humidity, situations without charge losses, with hole losses, and with electron losses have been observed. In this paper we show for sensors before and after irradiation by X-rays to 1 MGy (SiO2), how the charge losses change with the number of electron-hole pairs generated by each laser pulse, and the time interval between the laser pulses. This allows us to estimate how many additional charges in the accumulation layers at the Si-SiO2 interface have to be trapped to significantly change the local electric field, as well as the time it takes that the accumulation layer and the electric field return to the steady-state situation. In addition, results are presented on the change of the pulse shape caused by the plasma effect for high charge densities deposited close to the Si-SiO2 interface.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Study of X-ray radiation damage in the AGIPD sensor for the European XFEL

The European X-ray Free Electron Laser (XFEL), currently being constructed in Hamburg and planning to be operational in 2017 for users, will deliver 27,000 fully coherent, high brilliance X-ray pulses per second with duration less than 100 fs. The unique features of the X-ray beam pose major challenges for detectors used at the European XFEL for imaging experiments, in particular a radiation tolerance of silicon sensors for doses up to 1 GGy for 3 years of operation at an operating voltage above 500 V. One of the detectors under development at the European XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which is a hybrid detector system with ASICs bump-bonded to p+n silicon pixel sensors. We have designed the silicon sensors for the AGIPD, which have been fabricated by SINTEF and delivered in the beginning of February of 2013. To demonstrate the performance of the AGIPD sensor with regard to radiation hardness, mini-sensors with the same pixel and guard-ring designs as the AGIPD together with test structures have been irradiated at the beamline P11 of PETRA III with 8 keV and 12 keV monoenergetic X-rays to dose values up to 10 MGy. The radiation hardness of the AGIPD sensor has been proven and all electrical properties are within specification before and after irradiation. In addition, the oxide-charge density and surface-current density from test structures have been characterized as function of the X-ray dose and compared to previous measurements for test structures produced by four vendors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses of 660 nm wavelength, which has an absorption length of 3.5 um in silicon at room temperature. The paper describes the measurement and analysis techniques used to determine the number of electrons and holes collected. Depending on biasing history, humidity and irradiation, incomplete collection of either electrons or holes is observed. The charge losses change with time. The time constants are different for electrons and holes and increase by two orders of magnitude when reducing the relative humidity from about 80 % to less than 1 %. An attempt to interpret these results is presented.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Challenges for Silicon Pixel Sensors at the European XFEL

A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Charge losses in segmented silicon sensors at the Si-SiO2 interface

Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of 660 nm has been studied. Sensors before and after irradiation with 1 MGy of X-rays have been investigated. The charge signals induced in the readout strips and the rear electrode as a function of the position of the light spot are described by a model which allows a quantitative determination of the charge losses and of the widths of the electron-accumulation and hole-inversion layers close to the Si-SiO2 interface. Depending on the applied bias voltage, biasing history and environmental conditions, like humidity, incomplete electron or hole collection and different widths of the accumulation layers are observed. In addition, the results depend on the time after biasing the sensor, with time constants which can be as long as days. The observations are qualitatively explained with the help of detailed sensor simulations. Finally, their relevance for the detection of X-ray photons and charged particles, and for the stable operation of segmented p+n silicon sensors is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL

Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations <100> and <111> produced by two vendors, CiS and Hamamatsu, have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron light source. Using capacitance/conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the surface densities of oxide charges and interface traps at the Si-SiO2 interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the surface density of oxide charges and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the surface density of oxide charges and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO2 to the Si-SiO2 interface. Finally, annealing studies have been performed at 60 and 80 degree C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy and the annealing kinetics of oxide charges and surface current determined.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times 200 \mum arriving within less than 100 fs, and a time interval between XFEL pulses of 220 ns. To address these challenges, in particular the question of radiation damage, the properties of the SiO_2 layer and of the Si-SiO_2 interface using MOS capacitors manufactured on high resistivity n-type silicon irradiated to X-ray doses between 10 kGy and 1 GGy, have been studied. Measurements of Capacitance/Conductance-Voltage (C/G-V) at different frequencies, as well as Thermal Dielectric Relaxation Current (TDRC) have been performed. The data can be described by a radiation dependent oxide charge density and three dominant radiation-induced interface states with Gaussian-like energy distributions in the silicon band gap. It is found that the densities of the fixed oxide charges and of the three interface states increase up to dose values of approximately 10 MGy and then saturate or even decrease. The shapes and the frequency dependences of the C/G-V measurements can be quantitatively described by a simple model using the parameters extracted from the TDRC measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Study of X-ray Radiation Damage in Silicon Sensors

The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the insulating layer covering the silicon and interface traps at the Si-SiO2 interface will be introduced by the irradiation and build up over time. We have investigated the microscopic defects in test structures and the macroscopic electrical properties of segmented detectors as a function of the X-ray dose. From the test structures we determine the oxide charge density and the densities of interface traps as a function of dose. We find that both saturate (and even decrease) for doses between 10 and 100 MGy. For segmented sensors the defects introduced by the X-rays increase the full depletion voltage, the surface leakage current and the inter-pixel capacitance. We observe that an electron accumulation layer forms at the Si-SiO2 interface. Its width increases with dose and decreases with applied bias voltage. Using TCAD simulations with the dose dependent parameters obtained from the test structures, we are able to reproduce the observed results. This allows us to optimize the sensor design for the XFEL requirements.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for <111> and <100> crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p^+nn^+ diodes in the temperature range between -30°C and 50°C and electric fields of 2x10^3 V/cm to 2x10^4 V/cm.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes

Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an option to overcome the strong trapping of charge carriers in the innermost tracking region of future Super-LHC detectors. Charge collection efficiency (CCE) measurements using the Transient Current Technique (TCT) with radiation of different penetration (670, 830, 1060 nm laser light and $α$-particles with optional absorbers) were used to locate the CM region close to the p$^+$-implantation. The dependence of CM on material, thickness of the epitaxial layer, annealing and temperature was studied. The collected charge in the CM regime was found to be proportional to the deposited charge, uniform over the diode area and stable over a period of several days. Randomly occurring micro discharges at high voltages turned out to be the largest challenge for operation of the diodes in the CM regime. Although at high voltages an increase of the TCT baseline noise was observed, the signal-to-noise ratio was found to improve due to CM for laser light. Possible effects on the charge spectra measured with laser light due to statistical fluctuations in the CM process were not observed. In contrast, the relative width of the spectra increased in the case of $α$-particles, probably due to varying charge deposited in the CM region.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors

This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and 1 MeV equivalent reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the microscopic reasons as based on defect analysis and their macroscopic consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60Co- doses can be completely understood by the formation of two point defects, both depending strongly on the Oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease resp. increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the Oxygen content or Si growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.

0 citations0 reviewsNo code linkedOpen access